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  • 1
    Digitale Medien
    Digitale Medien
    Allylic Rearrangements. XLII. The Preparation and Some Reactions of 3β-Chlorocholest-4-ene and 3α-Chlorocholest-4-ene1 (1959)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 81 (1959), S. 1452-1454 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja01515a042
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  • 2
    Digitale Medien
    Digitale Medien
    Spoilage of King Salmon (Oncorhynchus tshawytscha) Fillets Stored Under Different Atmospheres (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: : King salmon (Oncorhynchus tshawytscha) packaged in air (AIR), nitrogen (N2), or 40:60 carbon dioxide:nitrogen (CO2N2) was stored (0 °C) for 18, 25, and 54 d, respectively. Air packs (AIR9) were also stored at 9 °C for 4 d. A quality index (QI) method was developed to monitor sensory quality of cooked salmon. First detection of spoilage was 1.5, 15, 15, and 21 d for AIR9, AIR, N2, and CO2N2 treatments respectively. Total aerobic and sulfide-producing bacteria, pH, drip loss, Eh, color, texture, ATP derivatives, trimethylamine, total volatile base nitrogen, thiobarbituric acid numbers, and peroxide values were determined. Only total aerobic counts and hypoxanthine were indicators of sensory deterioration across treatments and times.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb09555.x
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  • 3
    Digitale Medien
    Digitale Medien
    Displacement damage equivalent to dose in silicon devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 451-453 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Particle-induced displacement damage effects in silicon bipolar transistors, including those due to electrons and to fission neutrons, are correlated on the basis of the nonionizing energy deposited in the lattice by the primary knock-on atoms. Deviations from linearity between damage effects and energy deposition are in a direction opposite to those expected from defect cluster models but can be accounted for in terms of the fraction of vacancy-interstitial pairs initially formed that survive recombination.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100949
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  • 4
    Digitale Medien
    Digitale Medien
    Effect of particle-induced displacements on the critical temperature of YBa2Cu3O7−δ (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The particle-induced depression of the superconducting critical temperature Tc of YBa2Cu3O7−δ is shown to be directly proportional, over seven orders of magnitude, to the nonionizing energy deposited in the lattice by primary knock-on atoms displaced by incident electrons, protons, and heavy ions. It is concluded that ΔTc is proportional only to the average number of defects produced and can therefore be predicted for any particle, energy, and fluence from a calculation of the nonionizing energy loss.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102287
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  • 5
    Digitale Medien
    Digitale Medien
    Effect of proton irradiation on the critical current and resistance of high Tc grain boundary Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 511-513 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the effects of defects on the critical current and resistance of high Tc grain boundary Josephson junctions using irradiation with 2-MeV protons. Radiation-induced defects cause the critical current (Ic) to decrease and the shunt resistance (R) to increase such that IcR∝1/R. The data are consistent with a tunneling barrier height increasing with fluence.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111089
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  • 6
    Digitale Medien
    Digitale Medien
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354012
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  • 7
    Digitale Medien
    Digitale Medien
    Time-resolved photoluminescence of undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4249-4251 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Energy and time-resolved photoluminescence data have been obtained for nominally undoped (n 4.5×1015 cm−3) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 μs, and surface recombination velocities were fund to be on the order of 103 cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting B coefficient ≥5.9×10−11 cm3/s at 300 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355962
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  • 8
    Digitale Medien
    Digitale Medien
    Degradation and annealing of electron-irradiated diffused junction InP solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7368-7375 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The degradation and annealing properties of 1 MeV electron-irradiated n+p diffused junction InP solar cells are reported in detail. The solar cells were characterized through current–voltage measurements under simulated solar illumination at 1 sun, AM0. The radiation-induced defect spectra were characterized through deep level transient spectroscopy. At fluences up to 1015 cm−2, cell degradation was primarily due to a decrease in the short-circuit current Isc which occurred during the introduction of the hole trap, H4. Most of this degradation could be removed by minority-carrier injection annealing of the H4 defect at temperatures as low as 225 K. At higher irradiation fluences, up to 1016 cm−2, cell degradation was dominated by a decrease in both the open-circuit voltage Voc and the fill factor. This degradation was caused by a large radiation-induced recombination current and by carrier removal which was associated with the introduction of the hole trap H5 and the electron traps EA, EC, and ED. Most of the effects of the recombination current and some of the carrier removal were removed by concurrent injection and thermal annealing between 373 and 400 K where the residual H4 defect concentration and the H5 defect were removed. Essentially full cell recovery was achieved after subsequent annealing between 450 and 500 K where the electron traps also showed a partial annealing stage. Thermal annealing without illumination in the range of 350–500 K showed the same defect annealing stages suggesting that the cell recovery in this temperature range is due solely to thermal annealing. The data are summarized to give a model for the radiation-induced degradation and annealing of these InP solar cells. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360386
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  • 9
    Digitale Medien
    Digitale Medien
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354812
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  • 10
    Digitale Medien
    Digitale Medien
    Electron irradiation of two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2173-2176 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Results are presented for 1 MeV electron-irradiated, two terminal, monolithic InP/Ga0.47In0.53As tandem solar cells. These highly efficient prototype cells show radiation resistance that is comparable to single junction InP cells. A current mismatch between the subcells does not occur until high fluence levels, that is, near 3×1015 e−/cm2. This value for the onset of current mismatch and the measured remaining absolute efficiency of 9.4% at 1×1016 e−/cm2 are excellent results reported for a tandem cell designed for space applications. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358795
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