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  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 1748-1755 
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1080-1085 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature photoluminescence experiments were performed on high-purity InP substrates as a function of heat treatment, flat-profile ion implantation and subsequent annealing procedures. Whereas the well resolved near band edge luminescence proved the superior substrate quality, up to 6 sharp luminescence lines (some of them not reported so far) and one shallow broad-band emission were observed after Si3N4 deposition and various annealing procedures. From the temperature dependence of the luminescence peak intensities the activation energies of the novel lines were determined and discussed in terms of excitons bound to processing-induced complex defects. These assignments are supported by the observation of a strong enhancement of the luminescence after low dose Ar+ ion implantation.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1008-1012 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Gas source molecular-beam epitaxy (MBE) has been studied as a low-temperature Si and SiGe epitaxial method. Specular single-crystalline silicon films were successfully grown by the gas source Si MBE technique at a substrate temperature of about 650 °C. N-type doping was carried out using PH3 gas as a dopant and the maximum electron concentration of 2.9x1019cm−3 was obtained. Furthermore, p-type doping using B2H6 gas was carried out for the first time and the maximum hole concentration of 9.5×1017cm−3 was successfully achieved. The SiGe alloy layer was also grown by the gas source MBE technique using GeH4 as a Ge source gas. The Ge concentration of the sample could be precisely controlled by the molar fraction of Ge in supply and it was increased up to 0.30 with increasing the gas ratio of GeH4 to Si2H6.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 257-260 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The strain patterns detected by x-ray topography in wafers bonded for silicon-on-insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal-oxide-semiconductor devices performance.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2993-2998 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new polishing machine has been constructed for the fabrication of bonded-wafer silicon-on-insulator (bonded-wafer SOI) through a numerically controlled polishing technique. The polishing machine is equipped with 32 small-area tools which produce the variation of polishing pressure over a wafer surface. The tools do not rotate. Instead, the wafers being polished perform an oscillatory motion. A tool removal profile which was adequate for selectively polishing one place on a wafer without affecting its neighboring areas was obtained. As a result of its test operation, the initial thickness deviation of σ=380 nm of the top Si layer of a bonded-wafer SOI sample has been improved to σ=48 nm.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 349-351 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton. Selective excitation of donor-acceptor pairs luminescence allows the identification of a set of 2P3/2 and 2P5/2 excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1095-1097 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Multistep wafer-annealed semi-insulating GaAs wafers (MWA) are characterized using photoluminescence (PL). The PL spectra present well-resolved near-band-edge transitions, including the doublet of the neutral acceptor-bound exciton. A detailed investigation using selective pair luminescence of samples submitted to different annealings, i.e., wafer- or ingot-annealing, single or multistep, shows that carbon is the main shallow acceptor. However, for the wafer-annealed samples, two other residual impurities found in the as-grown or ingot-annealed crystals have their estimated concentrations noticeably reduced, for Zn (e.g., around 1013 cm−3 in MWA), or are unresolved for Si. This reduction of background impurities may have direct consequences for device applications.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 991-993 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of Li codoping in ZnS:TmF3 thin-film electroluminescent devices are reported. ZnS:Tm, Li thin films are prepared at several Li concentrations and substrate temperatures. The electroluminescent characteristics of ZnS:Tm,Li devices depend on Li concentrations, substrate temperatures, the annealing, and drive voltages.
    Materialart: Digitale Medien
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  • 9
    ISSN: 1434-0879
    Schlagwort(e): Prostate cancer ; Tumor marker ; Prostate-specific antigen ; γ-Seminoprotein
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary Prostate-specific antigen (PA) and γ-seminoprotein (γ-Sm) were compared by immunocytochemical, immunodiffusion and immunoblotting methods using rabbit anti-PA antibody and rabbit anti-γ-Sm antibody. Enzyme immunoassys (EIAs) were developed for measurements of PA and γ-Sm to determine a correlation between serum PA and γ-Sm levels in patients with prostate cancer. The patterns of localization and distribution of PA and γ-Sm were identical in prostate tissue sections, including benign and cancerous human prostacs. The immunodiffusion study showed that the antigens with which anti-PA antibody and anti-γ-Sm antibody reacted in seminal plasma and prostate tissue homogenates were identical to each other. In the immunoblotting study, anti-PA antibody and anti-γ-Sm antibody recognized a single antigen corresponding to a molecular weight of approximately 33,000 both in seminal plasma and prostate tissue homogenates. The EIAs developed in this study were sensitive, specific, and reproducible, and the correlation between serum PA and γ-Sm values determined by these EIAs was highly significant (r=0.99, P(0.001). These results indicated that PA and γ-Sm were immunologically identical and that serum PA and γ-Sm determined by immunoassays using anti-PA antibody and anti-γ-Sm antibody should be evaluated as identical tumor markers for serodiagnosis of prostate cancer.
    Materialart: Digitale Medien
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  • 10
    ISSN: 1432-0630
    Schlagwort(e): 78.55.Cr ; 78.30.Gt ; 81.20.-n
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Mg+ ions were implanted into highly pure InP grown by the liquid encapsulated Czochralski (LEC) method in which the Mg concentration [Mg] was varied between 1×1015 cm−3 and 3×1020 cm–3. Two annealing methods were used: furnace annealing (FA) up to 740° C and flash lamp annealing (rapid thermal annealing, RTA) up to 900° C. For characterization, photoluminescence (PL) spectra were measured between 2K and room temperature together with Raman scattering measurements at room temperature. An emission designated by g, which was attributed to a novel energy state of an isolated acceptor, was found to be produced for a rather low value of [Mg]. In addition, a broad emission denoted by [g−g], which was ascribed to acceptor-acceptor pairs, was observed below bound exciton emissions for moderate values of [Mg]. These features were quite similar to those previously observed in acceptor-doped GaAs when the background concentration of donors is extremely low. Two additional novel emissions located far below the band-to-acceptor emission were also obtained, and each showed a remarkable energy shift towards lower energy with increasing [Mg]. The binding energies of these emissions were estimated from the temperature dependence of PL spectra and the results suggest that they are complex-type radiative recombination centers, presumably donor-acceptor-type centers. A strong broad emission centered near the band-to-acceptor emission was observed for [Mg]=3×1020 cm−3. This observation indicates a formation of a new material between In, P and Mg, which was also attested by the appearance of a new TO-like Raman signal for [Mg] greater than 1×1019 cm−3. A substantial difference of PL and Raman spectra was revealed for the two annealing methods, suggesting that the annealing behaviour of ion-implanted InP should be investigated more extensively in order to establish reliable annealing procedures.
    Materialart: Digitale Medien
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