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  • 1
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    Applications to nonthermal plasma processing: Industrial plasma engineering : Applications to nonthermal plasma processing (2001)
    Bristol : Institute of Physics Pub
    Details
    Keywords: Manufacturing processes. ; Plasma engineering.
    Pages: xi, 645 p.
    ISBN: 0-585-48833-9
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=101875
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical interaction of Si, Ti, and Mo with graphite surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7695-7702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of Si, Ti, and Mo atoms with pyrolytic graphite substrates has been studied for evaporated layers of about 100 nm and implanted ions with mean ranges between 2 and 4 nm. In the temperature range from room temperature to 1800 K the thermal diffusion of carbon into the evaporated layers has been studied by Rutherford backscattering spectroscopy while the temperature dependence of the carbide formation has been studied by x-ray photoelectron spectroscopy. For all three systems stable carbidic phases are predicted by equilibrium phase diagrams. For Ti the formation of TiC is already observed after room temperature implantation, while for Mo annealing to 1200 K is necessary for Mo2C formation. In the case of Si oxygen contamination due to the air transfer after implantation resulted in a mixed SiOxCy phase which only transformed into a SiC phase at temperatures above 900 K, where the oxygen was released. The temperature range of stability of the carbidic layers was found to be correlated to the melting temperature of the metal–carbide eutectic. Above this temperature the metal atoms rapidly dissolve in the graphite lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362673
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  • 3
    Electronic Resource
    Electronic Resource
    Sputtering of boron-doped graphite USB15—Investigation of the origin of low chemical erosion (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3812-3817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The changes in surface composition of USB15—a boron doped graphite containing 15 wt.% of boron—during bombardment with D ions were determined by in situ Auger electron spectroscopy at temperatures from 300 up to 1000 K. For energies above 100 eV no strong increase of the boron surface concentration could be observed even around 800 K, i.e., at the maximum for chemical erosion of pure graphite. Chemical factor analysis of the carbon Auger peak in this energy-regime results in a much larger carbidic fraction of carbon atoms than suspected from the boron content of 15%. Thus, boron influences much more carbon atoms in their chemical reactivity with deuterium ions than is expected for the stoichiometric B4C precipitates. For ion energies below 100 eV a strong increase of boron surface concentration with decreasing ion energy at room temperature was observed. The chemical erosion of carbon in this energy regime is not suppressed by boron doping and indicates a different, surface related release process of hydrocarbon molecules. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359560
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition and hydrogen content of carbon films grown by CH+3 ion-beam bombardment (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5366-5372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon deposition and hydrogen codeposition is investigated as a function of ion energy, fluence, and target temperature at normal incidence by bombardment of silicon and pyrolitic graphite substrates with mass selected CH+3 molecules. An amorphous hydrogenated carbon layer (a-C:H) is formed in a thickness range of 40–130 nm at a fluence of 3×1018/cm2. The deposition process, the re-erosion phenomenon, the hydrogen content, and the H/C ratios of the carbon films are studied between 300 and 1000 K in the ion energy range from 150 eV to 3 keV. The experimental results are compared with those of TRIDYN computer simulations and previous experimental results of carbon sputtering by atomic H+ and C+ beams in order to obtain a better understanding of the interaction between hydrocarbon ions and the carbon-based wall materials in fusion devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359717
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  • 5
    Electronic Resource
    Electronic Resource
    Heat Transfer and Chemical Kinetics in the Ignition of Solid Propellants (1962)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 1 (1962), S. 62-67 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i160001a011
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  • 6
    Electronic Resource
    Electronic Resource
    On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high-fluence D+ irradiation at elevated temperature (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342656
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  • 7
    Electronic Resource
    Electronic Resource
    Radiation damage and annealing in graphite implanted with H+2 and Mo+ (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2603-2608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage due to H+2 and Mo+ implantation into hot-worked pyrolytic graphite and into single-crystal graphite flakes has been studied using 1-MeV 4He+ ion channeling. The implant energies used, 35 keV for H+2 and 120 keV for Mo+, yielded ranges of about 1600 and 600 A(ring), respectively. For H2 implantation, a partially crystalline surface layer remains after a fluence of 2×1016 H/cm2; this layer is completely disordered at 2×1017 H/cm2. At higher hydrogen fluences a surface layer exfoliates. For Mo implantation the disorder introduced at a fluence of 5×1014 Mo/cm2 is sufficient to prevent channeling throughout the range. For both implant species, complete recrystallization of samples disordered up to the surface occurs for annealing only at temperatures above 2800 K. If a surface layer remains crystalline after implantation, recrystallization proceeds both from the bulk and from the surface, and crystallinity is restored at 2300 K. While hydrogen is known to be released at temperatures between 1100 and 1500 K, Mo remains within its original range distribution up to the temperature of complete recrystallization. At a temperature of 2300 K an ordering of the implanted Mo atoms with respect to the c axis is observed, indicating short-range migration within the range distribution. At 2800 K no more Mo could be found in the analyzed surface layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340997
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  • 8
    Electronic Resource
    Electronic Resource
    Damage formation and substitutionality in 75As++-implanted diamond (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2986-2990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250-keV 75As++ at either 600 °C or room temperature. Lattice damage following implantation at 600 °C was substantially less than damage following room-temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 °C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high-temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349326
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of the nonlinear behavior of a partially ionized, turbulent plasma in a magnetic field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 488-499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, a number of the methods of nonlinear dynamics are applied to the study of electrostatic turbulence in a magnetized, steady-state, partially ionized plasma. Electrostatic potential fluctuations were obtained by using a capacitative probe. These signals were captured, digitized, and recorded with a LeCroy transient recorder system interfaced to an IBM-AT personal computer. A commercially available software program was used to calculate power spectra, to reconstruct and plot phase portraits, take Poincaré sections, compute correlation dimensions and Lyapunov exponents, and to perform other manipulations of the time series of electrostatic potential fluctuations obtained from the plasma. Evidence of low-dimensional chaos was sought, and trends were investigated which related the state of the turbulence to such plasma parameters as the anode voltage (rms electrostatic potential), background gas pressure (collisionality), and magnetic induction. These variables were found to have a significant effect on the nonlinear dynamics of the plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346818
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  • 10
    Electronic Resource
    Electronic Resource
    Damage and deuterium trapping in highly-oriented pyrolytic graphite (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2225-2233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the buildup of damage due to deuterium implantation in highly-oriented pyrolytic graphite (HOPG) is investigated. HOPG was implanted with 10–30 keV D3+ at different target temperatures between room temperature and 773 K with fluences from 1014 to 1018 D/cm2. Subsequently, the damage due to the implantation and the retained deuterium were measured by Rutherford backscattering (RBS) in a channeling direction (RBSc) and by the D(3He, p)α nuclear reaction analysis (NRA), respectively. The damage of selected samples was additionally observed with transmission electron microscopy (TEM). The initial trapping efficiency is unity in the whole temperature and energy range. The maximum retention of the deuterium, however, depends on the temperature and implantation energy. The damage in HOPG measured with RBSc starts to saturate at 5×1015 D/cm2 (295 K) and 1.3×1017 D/cm2 (773 K). Both fluences are well below the fluence at which amorphization is observed in TEM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353126
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