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  • 1
    Electronic Resource
    Electronic Resource
    New method for Hofmann rearrangement
    Amsterdam : Elsevier
    Tetrahedron Letters 31 (1990), S. 1559-1562 
    Details
    ISSN: 0040-4039
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-4039(90)80016-F
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  • 2
    Electronic Resource
    Electronic Resource
    Spinal clear cell meningioma presented with progressive paraparesis in infancy (2000)
    Springer
    Child's nervous system 16 (2000), S. 607-610 
    Details
    ISSN: 1433-0350
    Keywords: Keywords Spinal clear cell meningioma ; Infancy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract  Clear cell meningioma, about 20 cases of which have been reported in the literature, is a morphological variant of meningioma. The authors report a case of spinal clear cell meningioma that occurred in a child. A 14-month-old girl showed gradually progressive paraparesis 1 month after she started to walk. Magnetic resonance image showed an intradural extramedullary mass compressing the conus medullaris and cauda equina. Complete excision of the tumor was done, and the patient gradually recovered from motor weakness and neurogenic bladder. Histological examinations along with immunohistochemical and ultrastructural investigations allowed a diagnosis of clear cell meningioma. During the follow-up period, a recurrent mass lesion was detected on the 8-month follow-up MR image in the same region. Because clear cell meningioma might be biologically aggressive, postoperative adjuvant therapy and close follow-up investigation should be considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/PL00007302
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  • 3
    Electronic Resource
    Electronic Resource
    Adhesion and mechanical properties of amorphic diamond films prepared by a laser plasma discharge source (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1446-1453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphic diamond films can be grown in an ultrahigh vacuum environment free from hydrogen with a laser plasma discharge source. This technique produces films that adhere more readily to materials for which there are important applications as protective coatings. In this work adhesion and mechanical properties of amorphic diamond films have been examined. A beam bending method has been used to measure the internal stress and a relatively low value of compressive stress was found. The dependence of stress on the laser intensities at the graphite ablation target has been studied. Analyses of these films on silicon, SiO2, ZnS, and TiAl6V4 by Rutherford backscattering spectrometry show significant interfacial layers with compositions of SiC, C0.5SiO2, C2.5ZnS, and C0.62Ti0.35Al0.05V0.02, respectively. Adhesion properties on ZnS and other substrates have also been examined for harsh environments. The mechanical properties of hardness, Young's modulus, and stiffness have been obtained with a nanoindentation technique. These results together with the minimal amount of hydrogen in our process, make amorphic diamond an excellent candidate for direct deposition on several substrates including ZnS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351267
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  • 4
    Electronic Resource
    Electronic Resource
    The interfacial layer formation of the Al2O3/Si structures grown by low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 760-762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of Al2O3 using Al(O-C3H7)3 and N2O via pyrolysis was investigated with the goal of producing Al2O3 epitaxial films on p-Si (100) substrates. Room-temperature capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3/p-Si interface were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap. Auger depth profiles demonstrated that the Al2O3/Si interface was not abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the Al2O3/Si interface and the formation of a polycrystalline Al2O3 thin film. These results indicated that the failure to form Al2O3 epitaxial films was due to the formation of an interfacial layer prior to the growth of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355224
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of CaS:Eu and SrS:Eu phosphors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4546-4549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phosphors of alkali-earth sulfides SrS:Eux (x=0.05 and 0.10 mole per mole of SrS), SrSO:Eux (x=0.05), and CaS:Eux (x=0.0005, 0.05, and 0.10) were studied by x-ray photoelectron spectroscopy. The CaS:Eu phosphors were found to be stabilized against atmospheric water vapor and carbon dioxide by annealing at high temperature for several hours. The S 2p core level shows that the chemical state of sulfur changes abruptly from −2 to +6 between the annealing temperature of 900 and 1100 °C. The Ca core level, on the other hand, does not show much change depending on the annealing temperature. From the Eu 3d core-level spectra of SrS:Eux and CaS:Eux (x=0.10) phosphors, we confirm that the valence state of Eu in these phosphors is Eu3+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352799
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructural analyses of amorphic diamond, i-C, and amorphous carbon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 239-245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments have identified the microstructure of amorphic diamond with a model of packed nodules of amorphous diamond expected theoretically. However, this success has left in doubt the relationship of amorphic diamond to other noncrystalline forms of carbon. This work reports the comparative examinations of the microstructures of samples of amorphic diamond, i-C, and amorphous carbon. Four distinct morphologies were found that correlated closely with the energy densities used in preparing the different materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352168
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  • 7
    Electronic Resource
    Electronic Resource
    The bonding of protective films of amorphic diamond to titanium (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3260-3265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have "bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100–200-A(ring)-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351390
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1049-1051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351360
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure of amorphic diamond films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7862-7870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been previously reported that layers of amorphic diamond can be grown in a UHV environment free from hydrogen with a laser plasma source. Some advantages are offered by this technique which produces films that adhere more readily to materials for which there are important applications. Theory has recently suggested a structure for amorphic diamond that comprises nodules of carbon atoms linked by sp3 bonds in a matrix of other polytypes and the purpose of this article is to communicate strong evidence in support of that hypothesis. Extensive examinations of a variety of films with a scanning tunneling microscope show a clearly prevalent structure composed of dense nodules. Grain size is about 1000 A(ring) and the diamond character is attested by the agreement of morphology, high density, optical properties, soft x-ray spectroscopy, hardness, and lack of appreciable hydrogen. Measurements agree in supporting a fraction of about 75% diamond contents. The principal conclusion is that this material prepared with a laser plasma source has the structure expected for amorphic diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347519
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  • 10
    Electronic Resource
    Electronic Resource
    Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2942-2950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed study of the effects of ion bombardment on the optoelectronic properties of a-Si:H films. Two series of samples were deposited from a rf glow discharge at 30 and 100 mTorr of silane pressure, corresponding to two different deposition conditions. The energy of the ions impinging on the substrate was increased by applying a negative dc bias in steps of 25 V to the substrate holder. The increase of the substrate bias from 0 to −100 V had no effect on the deposition rate of a-Si:H at 30 mTorr, whereas a factor of 2 decrease was observed for deposition at 100 mTorr. The density of states of the a-Si:H films, determined by photothermal deflection spectroscopy and by the constant-photocurrent method, decreased as the substrate bias was increased up to −50 V, especially for the series deposited at 100 mTorr. At the same time the valence-band tail became sharper. These observations are consistent with the improvement of the electron drift-mobility deep-trapping-lifetime (μdτd)e product, determined by time-of-flight, and of the hole-mobility recombination-lifetime (μτr)h product determined from the voltage dependence of the photocurrent collection efficiency. For both series of samples, the films with the best electronic properties were obtained at a negative substrate bias of 50 V. No correlation was found between the substrate bias and the light-induced degradation behavior of these films. The saturated density of light-induced defects shows a direct correlation with the optical gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348605
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