Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Unknown
    Albany : State University of New York Press
    SUNY series in global politics  
    Keywords: Globalization. ; International relations. ; Political geography.
    Notes: Problem of change in international relations theory /K.J. Holsti --Reconfiguring international political space: the significance of world history /Richard Little --Informational reconfiguring of global geopolitics /Ken Dark --Remapping political space: issues and nonissues in analyzing global politics in the twenty-first century /Yale H. Ferguson and Richard W. Mansbach --Political power and geographical scale /John Agnew --Mapping global/local spaces /Robert Latham --Cartographies of loathing and desire: the Bharatiya Janata party, the bomb, and the political spaces of Hindu nationalism /Stuart Corbridge --New cross-border field for public and private actors /Saskia Sassen --Finance in politics: an epilogue to Mad money /Susan Strange --Offshore and the institutional environment of globalization /Ronen Palan --Governance and the challenges of changing political space /R.J. Barry Jones --Club identity and collective action: overlapping interests in an evolving world system /Mark A. Boyer --NGOs and fragmented authority in globalizing space /James N. Rosenau --Practicing democracy transnationally /Rey Koslowski and Antje Wiener.
    Pages: vi, 319 p.
    ISBN: 0-585-48645-X
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 102 (1995), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 102 (1995), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 15 (1972), S. 281-285 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs layers (0≤x≤0.37) doped with carbon (〉1020 cm−3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values of x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A−1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H–CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm−1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm−1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In–CAs bonds as well as Ga–CAs bonds are formed, whereas there is no evidence for the formation of In–CAs bonds in samples doped with C derived from trimethylgallium or solid sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1014-1022 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-zero current-voltage characteristics and time-dependent current behavior of metal-ferroelectric-metal (Pt-PZT-Pt) capacitor structures have been studied. Under constant-voltage stressing, the current density through the 1500-A(ring)-thick lead-zirconate-titanate (PZT) film exhibits a power-law dependence on time, with the exponent (∼0.33) independent of temperature and voltage. Electrode material dependence of current density indicates that the conventional model of trap-limited single-carrier injection over nonblocking contacts is inadequate to explain the time-zero current. A change in top electrode material from Pt to In leads to the observation of work-function-driven Schottky contacts between the metal and ferroelectric. The current-voltage characteristics fit a two-carrier injection metal-semiconductor-metal model incorporating blocking contacts, with distinct low- and high-current regimes (PZT is assumed to be p-type and trap-free in this model). Temperature-dependent I-V measurements indicate a Pt-PZT barrier height of 0.6 eV and an acceptor doping level of ∼1018 cm−3 in PZT. The implications of this model on the optimization of ferroelectric capacitors for dynamic random access memory applications are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 6947-6951 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Density functional calculations have been performed on two types of molecular crystal: (a) crystalline (orthorhombic) polyethylene comprising covalently bonded parallel chains with weak interchain interactions, and (b) a crystalline analog of bisphenol-A polycarbonate with a unit cell containing two molecules with 59 atoms each. The local density approximation for the exchange-correlation energy overestimates the strength of the intermolecular bonds in both, and the Becke–Perdew functional (gradient corrected) gives no intermolecular binding in the former and a very weak bond in the latter. The functional of Perdew, Burke, and Ernzerhof leads to binding in both molecules. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 11080-11094 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A Stokesian dynamics constraint algorithm for the irreversible deposition of colloidal particles onto a surface is presented. This algorithm can also be used to simulate a variety of nondeposition phenomena and with any method for computing the hydrodynamic interactions among the particles. In particular, a multipole scheme we recently described for computing the mobility matrix of colloidal particles, with or without the presence of a wall, is used here in conjunction with the new deposition algorithm to perform Stokesian dynamics irreversible deposition simulations on a group of 75 colloidal particles. Deposition simulations are performed with and without the hydrodynamic effect of the wall (substrate) being included in the mobility matrix. The results of the simulations lead to important qualitative conclusions on the effect of hydrodynamic interactions on the deposition process, in particular the hydrodynamic effect of the wall. In addition, the simulations serve to illustrate the performance of the new deposition algorithm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 6571-6575 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Density functional calculations on carbonic acid H2CO3 are extended to clusters of up to five such units. The most stable forms are the linear, hydrogen-bonded analogs of the dimer with anti–anti orientation. We calculate structures and vibration frequencies, as well as the energy required to bend and stretch the linear isomers. Linear chains of up to ∼20 units should be favored over ring structures, and they have a tensile strength reminiscent of chains of water molecules. We also discuss planar, nonlinear structures as well as three-dimensional isomers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...