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  • Electronic Resource  (169,473)
  • Book  (397)
  • AV-Medium  (2)
  • 2020-2024  (36)
  • 2010-2014  (2)
  • 2000-2004  (39,971)
  • 1995-1999  (5)
  • 1975-1979  (5)
  • 1970-1974  (56,452)
  • 1965-1969  (50,606)
  • 1935-1939  (14,748)
  • 1890-1899  (8,064)
  • 1800-1809
  • 2024  (6)
  • 2020  (32)
  • 2002  (39,971)
  • 1972  (56,451)
  • 1969  (50,606)
  • 1936  (14,748)
  • 1896  (4,130)
  • 1893  (3,934)
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  • 1
    Electronic Resource
    Electronic Resource
    A measurement of τ polarization in Z^0 decays (1992-8977)
    Amsterdam : Elsevier
    Physics Letters B 294 (1992), S. 466-478 
    Details
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(92)91549-O
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Measurement of the average lifetime of b hadrons (1993-4325)
    Amsterdam : Elsevier
    Physics Letters B 317 (1993), S. 474-484 
    Details
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(93)91027-K
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  • 3
    Book
    Book
    ¬The¬ New Mathematical Coloring Book : Mathematics of Coloring and the Colorful Life of Its Creators (2024)
    New York :SpringerNew Mathematical Coloring Book,
    Details
    Title: ¬The¬ New Mathematical Coloring Book : Mathematics of Coloring and the Colorful Life of Its Creators
    Author: Soifer, Alexander
    Edition: 2nd ed. 2024
    Publisher: New York :SpringerNew Mathematical Coloring Book,
    Year of publication: 2024
    Pages: XLVIII, 841 p. 80 illus., 77 illus.
    ISBN: 9781071635971
    Type of Medium: Book
    Language: English
    URL: https://search.ebscohost.com/login.aspx?direct=true&db=nlebk&AN=3850027&site=ehost-live
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  • 4
    Book
    Book
    ¬Eine¬ kurze Geschichte der Künstlichen Intelligenz / (2024)
    Stuttgart :Klett-Cotta,
    Details
    Title: ¬Eine¬ kurze Geschichte der Künstlichen Intelligenz /
    Author: Wildenhain, Michael
    Publisher: Stuttgart :Klett-Cotta,
    Year of publication: 2024
    Pages: 119 Seiten
    ISBN: 978-3-7681-9824-0
    Type of Medium: Book
    Language: German
    URL: Inhaltstext
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  • 5
    Book
    Book
    Anwendungen mit GPT-4 und ChatGPT entwickeln : intelligente Chatbots, Content-Generatoren und mehr erstellen (2024)
    Heidelberg :O'Reilly,
    Details
    Title: Anwendungen mit GPT-4 und ChatGPT entwickeln : intelligente Chatbots, Content-Generatoren und mehr erstellen
    Author: Caelen, Olivier
    Contributer: Blete, Marie-Alice
    Edition: 1. Auflage
    Publisher: Heidelberg :O'Reilly,
    Year of publication: 2024
    Pages: 158 Seiten
    ISBN: 978-3-96009-241-4
    Type of Medium: Book
    Language: German
    URL: Inhaltstext
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  • 6
    Book
    Book
    Künstliche Intelligenz und wissenschaftliches Arbeiten : ChatGPT & Co.: Der Turbo für ein erfolgreiches Studium (2024)
    München :Verlag Franz Vahlen,
    Details
    Title: Künstliche Intelligenz und wissenschaftliches Arbeiten : ChatGPT & Co.: Der Turbo für ein erfolgreiches Studium
    Author: Bucher, Ulrich
    Contributer: Holzweißig, Kai , Schwarzer, Markus
    Publisher: München :Verlag Franz Vahlen,
    Year of publication: 2024
    Pages: X, 181 Seiten
    ISBN: 978-3-8006-7322-3
    Type of Medium: Book
    Language: German
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  • 7
    Book
    Book
    c't Python-Projekte 2020 : von alltagstauglich bis völlig nerdig (2020)
    Heise Zeitschriften Verlag,
    Details
    Title: c't Python-Projekte 2020 : von alltagstauglich bis völlig nerdig
    Author: c't-Redaktion
    Publisher: Heise Zeitschriften Verlag,
    Year of publication: 2020
    Type of Medium: Book
    Language: German
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  • 8
    Book
    Book
    Ansible : das Praxisbuch für Administratoren und DevOps-Teams (2020)
    Bonn :Rheinwerk Computing,
    Details
    Title: Ansible : das Praxisbuch für Administratoren und DevOps-Teams
    Author: Miesen, Axel
    Edition: 1. Auflage
    Publisher: Bonn :Rheinwerk Computing,
    Year of publication: 2020
    Pages: 395 Seiten
    ISBN: 978-3-8362-7660-3
    Type of Medium: Book
    Language: German
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  • 9
    Book
    Book
    Bürgerliches Gesetzbuch : mit Allgemeinem Gleichbehandlungsgesetz, Produkthaftungsgesetz, Unterlassungsklagengesetz, Wohnungseigentumsgesetz, Beurkundungsgesetz und Erbbaurechtsgesetz (2020)
    München :dtv,
    Details
    Title: Bürgerliches Gesetzbuch : mit Allgemeinem Gleichbehandlungsgesetz, Produkthaftungsgesetz, Unterlassungsklagengesetz, Wohnungseigentumsgesetz, Beurkundungsgesetz und Erbbaurechtsgesetz
    Contributer: Köhler, Helmut
    Edition: 85., überarbeitete Auflage, Stand: 7. Januar 2020
    Publisher: München :dtv,
    Year of publication: 2020
    Pages: XXXI, 847 Seiten
    ISBN: 978-3-423-53023-1
    Type of Medium: Book
    Language: German
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  • 10
    Book
    Book
    Bundespersonalvertretungsgesetz : Basiskommentar mit Wahlordnung und ergänzenden Vorschriften für Gerichte, Bahn, Post, Bundeswehr und Nato (2020)
    Köln :Bund-Verlag,
    Details
    Title: Bundespersonalvertretungsgesetz : Basiskommentar mit Wahlordnung und ergänzenden Vorschriften für Gerichte, Bahn, Post, Bundeswehr und Nato
    Author: Altvater, Lothar
    Contributer: Baden, Eberhard , Baunack, Sebastian
    Edition: 9., aktualisierte Auflage
    Publisher: Köln :Bund-Verlag,
    Year of publication: 2020
    Pages: 1100 Seiten
    ISBN: 978-3-7663-6888-1
    Type of Medium: Book
    Language: German
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  • 11
    Book
    Book
    Algorithmen in Python : 32 Klassiker vom Damenproblem bis zu Neuronalen Netzen (2020)
    Bonn :Rheinwerk,
    Details
    Title: Algorithmen in Python : 32 Klassiker vom Damenproblem bis zu Neuronalen Netzen
    Author: Kopec, David
    Edition: 1. Auflage
    Publisher: Bonn :Rheinwerk,
    Year of publication: 2020
    Pages: 292 Seiten
    ISBN: 978-3-8362-7747-1
    Type of Medium: Book
    Language: German
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  • 12
    Book
    Book
    Bürgerliches Gesetzbuch : mit Nebengesetzen, insbesondere mit Einführungsgesetz (Auszug) einschließlich Rom I-, Rom II- und Rom III-Verordnungen sowie EU-Güterrechtsverordnungen, Haager Unterhaltsprotokoll und EU-Erbrechtsverordnung, Allgemeines Gleichbehandlungsgesetz (Auszug), Wohn- und Betreuungsvertragsgesetz, Unterlassungsklagengesetz (PalHome), Produkthaftungsgesetz, Erbbaurechtsgesetz, Wohnungseigentumsgesetz, Versorgungsausgleichsgesetz, Lebenspartnerschaftsgesetz (PalHome), Gewaltschutzgesetz (2020)
    München :C. H. Beck,
    Details
    Title: Bürgerliches Gesetzbuch : mit Nebengesetzen, insbesondere mit Einführungsgesetz (Auszug) einschließlich Rom I-, Rom II- und Rom III-Verordnungen sowie EU-Güterrechtsverordnungen, Haager Unterhaltsprotokoll und EU-Erbrechtsverordnung, Allgemeines Gleichbehandlungsgesetz (Auszug), Wohn- und Betreuungsvertragsgesetz, Unterlassungsklagengesetz (PalHome), Produkthaftungsgesetz, Erbbaurechtsgesetz, Wohnungseigentumsgesetz, Versorgungsausgleichsgesetz, Lebenspartnerschaftsgesetz (PalHome), Gewaltschutzgesetz
    Author: Palandt, Otto
    Contributer: Brudermüller, Gerd , Ellenberger, Jürgen , Götz, Isabell , Grüneberg, Christian
    Edition: 79., neubearbeitete Auflage, Redaktionsschluss: 15. Oktober 2019
    Publisher: München :C. H. Beck,
    Year of publication: 2020
    Pages: XXXIV, 3245 Seiten
    ISBN: 978-3-406-73800-5
    Type of Medium: Book
    Language: German
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  • 13
    Book
    Book
    Numerische Mathematik 3 : Adaptive Lösung partieller Differentialgleichungen; 3 (2020)
    Details
    Title: Numerische Mathematik 3 : Adaptive Lösung partieller Differentialgleichungen; 3
    Author: Deuflhard, Peter
    Contributer: Weiser, Martin
    Edition: 2. Aufl.
    Year of publication: 2020
    Series Statement: Numerische Mathematik 3
    ISBN: 978-3-11-069168-9
    Type of Medium: Book
    Language: German
    URL: http://search.ebscohost.com/login.aspx?direct=true&db=nlebk&AN=2621406&site=ehost-live
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  • 14
    Book
    Book
    Einstieg in Deep Reinforcement Learning : KI-Agenten mit Python und PyTorch programmieren (2020)
    München :Hanser Verlag,
    Details
    Title: Einstieg in Deep Reinforcement Learning : KI-Agenten mit Python und PyTorch programmieren
    Author: Zai, Alexander
    Contributer: Brown, Brandon
    Publisher: München :Hanser Verlag,
    Year of publication: 2020
    Pages: 400 S.
    ISBN: 978-3-446-45900-7
    Type of Medium: Book
    Language: German
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  • 15
    Book
    Book
    Surrogates : Gaussian process modeling, design, and optimization for the applied sciences (2020)
    Boca Raton :CRC Press,
    Details
    Title: Surrogates : Gaussian process modeling, design, and optimization for the applied sciences
    Author: Gramacy, Robert B.
    Publisher: Boca Raton :CRC Press,
    Year of publication: 2020
    Pages: 543 Seiten
    ISBN: 978-0-367-41542-6
    Type of Medium: Book
    Language: English
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  • 16
    Book
    Book
    Cataloguing culture : legacies of colonialism in museum documentation (2020)
    Vancouver :UBC Press,
    Details
    Title: Cataloguing culture : legacies of colonialism in museum documentation
    Author: Turner, Hannah
    Publisher: Vancouver :UBC Press,
    Year of publication: 2020
    Pages: xiii, 243 Seiten
    ISBN: 978-0-7748-6393-3
    Type of Medium: Book
    Language: English
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  • 17
    Book
    Book
    Practical statistics for medical research /; 12 (2020)
    London :Chapman & Hall,
    Details
    Title: Practical statistics for medical research /; 12
    Author: Altman, Douglas G.
    Edition: 2nd ed
    Publisher: London :Chapman & Hall,
    Year of publication: 2020
    Pages: 1 v.
    Series Statement: Chapman & Hall/CRC texts in statistical science 12
    ISBN: 978-1-584-88039-4 , 1-584-88039-2
    Type of Medium: Book
    URL: 04
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  • 18
    Book
    Book
    Geometric Partial Differential Equations : Part 1; 21 (2020)
    Amsterdam :Elsevier,
    Details
    Title: Geometric Partial Differential Equations : Part 1; 21
    Author: Bonito, Andrea
    Publisher: Amsterdam :Elsevier,
    Year of publication: 2020
    Pages: XVII, 692 S.
    Series Statement: Handbook of numerical analysis 21
    ISBN: 978-0-444-64003-1
    Type of Medium: Book
    Language: German
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  • 19
    Book
    Book
    Skalierbare Container-Infrastrukturen : das Handbuch für Administratoren & DevOps-Teams, inkl. Docker und Container-Orchestrierung mit Kubernetes und OpenShift (2020)
    Bonn :Rheinwerk,
    Details
    Title: Skalierbare Container-Infrastrukturen : das Handbuch für Administratoren & DevOps-Teams, inkl. Docker und Container-Orchestrierung mit Kubernetes und OpenShift
    Author: Liebel, Oliver
    Edition: 3., aktualisierte Auflage
    Publisher: Bonn :Rheinwerk,
    Year of publication: 2020
    Pages: 1260 Seiten
    ISBN: 978-3-8362-7772-3
    Type of Medium: Book
    Language: German
    Keywords: CoreOS ; Docker ; Kubernetes ; OpenShift ; Skopeo ; Continous Delivery ; Hochverfügbarkeit ; Microservices ; Deployment ; Ansible ; Scale Out ; Nomad ; systemd ; Mesos ; Orchestrierung ; Buildah ; Suse
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  • 20
    Book
    Book
    Effektiv Python programmieren : 90 Wege für bessere Python-Programme (2020)
    Bonn :mitp-Verlag,
    Details
    Title: Effektiv Python programmieren : 90 Wege für bessere Python-Programme
    Author: Slatkin, Brett
    Contributer: Lorenzen, Knut
    Edition: 2. Auflage
    Publisher: Bonn :mitp-Verlag,
    Year of publication: 2020
    Pages: 499 Seiten
    ISBN: 978-3-7475-0176-4
    Type of Medium: Book
    Language: German
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  • 21
    Book
    Book
    PostgreSQL for DBA : PostgreSQL 12 (2020)
    Independently Published,
    Details
    Title: PostgreSQL for DBA : PostgreSQL 12
    Author: Campoli, Federico
    Publisher: Independently Published,
    Year of publication: 2020
    Pages: 396 S.
    Type of Medium: Book
    Language: English
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  • 22
    Book
    Book
    ¬Die¬ Unix-Story : die faszinierende Geshcichte, wie Unix begann und wie es die Computerwelt eroberte (2020)
    Heidelberg :dpunkt Verlag,
    Details
    Title: ¬Die¬ Unix-Story : die faszinierende Geshcichte, wie Unix begann und wie es die Computerwelt eroberte
    Author: Kernighan, Brian
    Publisher: Heidelberg :dpunkt Verlag,
    Year of publication: 2020
    Pages: 240 S.
    ISBN: 978-3-86490-778-4
    Type of Medium: Book
    Language: German
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  • 23
    Book
    Book
    Geometric Singular Perturbation Theory Beyond the Standard Form / (2020)
    Cham :Springer,
    Details
    Title: Geometric Singular Perturbation Theory Beyond the Standard Form /
    Author: Wechselberger, Martin
    Publisher: Cham :Springer,
    Year of publication: 2020
    Type of Medium: Book
    Language: German
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  • 24
    Book
    Book
    Leitfaden zur industriellen Bildverarbeitung /; 14 (2020)
    Fürth :Fraunhofer Verlag,
    Details
    Title: Leitfaden zur industriellen Bildverarbeitung /; 14
    Author: Spinnler, Klaus
    Contributer: Sackewitz, Michael , Fraunhofer-Allianz Vision, Erlangen [Herausgebendes Organ]
    Edition: 3., überarb. Auflage
    Publisher: Fürth :Fraunhofer Verlag,
    Year of publication: 2020
    Pages: 104 Seiten
    Series Statement: Reihe Vision 14
    ISBN: 978-3-8396-1649-9
    Type of Medium: Book
    Language: German
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  • 25
    Book
    Book
    TV-L Kommentar 2020 : Jahrbuch zum Tarifvertrag der Länder mit allen wichtigen Tariftexten und den Entgeltordnungen (2020)
    Details
    Title: TV-L Kommentar 2020 : Jahrbuch zum Tarifvertrag der Länder mit allen wichtigen Tariftexten und den Entgeltordnungen
    Author: Effertz, Jörg
    Edition: 1. Aufl.
    Year of publication: 2020
    Pages: 1567 S.
    Series Statement: Wissen für die Praxis
    ISBN: 978-3-8029-7922-4
    Type of Medium: Book
    Language: German
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  • 26
    Book
    Book
    Machine Learning meets Quantum Physics / (2020)
    Berlin :Springer,
    Details
    Title: Machine Learning meets Quantum Physics /
    Contributer: Schütt, Kristof , Chmiela, Stefan , Lilienfeld, O. Anatole von , Tkatchenko, Alexandre , Tsuda, Kōji , Müller, Klaus-Robert
    Publisher: Berlin :Springer,
    Year of publication: 2020
    Pages: xvi, 467 Seiten
    ISBN: 978-3-030-40244-0
    Type of Medium: Book
    Language: English
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  • 27
    Book
    Book
    Create GUI Applications with Python & Qt5 (PyQt5 Edition) : The hands-on guide to making apps with Python (2020)
    Details
    Title: Create GUI Applications with Python & Qt5 (PyQt5 Edition) : The hands-on guide to making apps with Python
    Author: Fitzpatrick, Martin
    Year of publication: 2020
    Pages: 718 S.
    ISBN: 979-8-58590-415-8
    Type of Medium: Book
    Language: English
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  • 28
    Book
    Book
    Computergeschichte(n) : nicht nur für Nerds (2020)
    Bonn :Rheinwerk,
    Details
    Title: Computergeschichte(n) : nicht nur für Nerds
    Author: Wolf, Jürgen
    Publisher: Bonn :Rheinwerk,
    Year of publication: 2020
    Pages: 415 S
    ISBN: 978-3-8362-7777-8
    Type of Medium: Book
    Language: German
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  • 29
    Book
    Book
    ¬Das¬ Befristungsrecht des wissenschaftlichen Personals an deutschen Hochschulen zwischen wissenschaftlicher Dynamik und sozialer Sicherheit : eine Untersuchung des Wissenschaftszeitvertragsgesetzes; 161 (2020)
    Details
    Title: ¬Das¬ Befristungsrecht des wissenschaftlichen Personals an deutschen Hochschulen zwischen wissenschaftlicher Dynamik und sozialer Sicherheit : eine Untersuchung des Wissenschaftszeitvertragsgesetzes; 161
    Author: Domke, Friedrun
    Edition: 1. Auflage
    Year of publication: 2020
    Pages: 392 Seiten
    Series Statement: Arbeits- und Sozialrecht 161
    ISBN: 978-3-8487-6654-3
    Type of Medium: Book
    Language: German
    URL: Inhaltstext
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  • 30
    Book
    Book
    Fachkunde Elektrotechnik / (2020)
    Details
    Title: Fachkunde Elektrotechnik /
    Contributer: Tkotz, Klaus , Bumiller, Horst
    Edition: 32. überarbeitete und erweiterte Auflage
    Year of publication: 2020
    Pages: 696 S. +
    Series Statement: Europa-Fachbuchreihe für elektrotechnische Berufe
    ISBN: 978-3-8085-3791-6
    Type of Medium: Book
    Language: German
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  • 31
    Book
    Book
    Practical Git : Confident Git Through Practice (2020)
    Berkeley :Apress,
    Details
    Title: Practical Git : Confident Git Through Practice
    Author: Abildskov, Johan
    Edition: First edition 2020
    Publisher: Berkeley :Apress,
    Year of publication: 2020
    Pages: 181 Seiten
    ISBN: 978-1-4842-6269-6
    Type of Medium: Book
    Language: English
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  • 32
    Book
    Book
    High performance Python : practical performant programming for humans (2020)
    Sebastopol :O'Reilly Media,
    Details
    Title: High performance Python : practical performant programming for humans
    Author: Gorelick, Micha
    Contributer: Ozsvald, Ian
    Edition: Second edition
    Publisher: Sebastopol :O'Reilly Media,
    Year of publication: 2020
    Pages: 444 Seiten
    ISBN: 978-1-492-05502-0
    Type of Medium: Book
    Language: English
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  • 33
    Book
    Book
    Surplex 307 Stücke Organische Chemie Molekülmodell Set : Wissenschaftliche Chemie Atom molekulare Modelle Links Lehre Kit anorganische Strukturen Atom Link Model für Lehrer Studenten Chemieunterricht (2020)
    Surplex,
    Details
    Title: Surplex 307 Stücke Organische Chemie Molekülmodell Set : Wissenschaftliche Chemie Atom molekulare Modelle Links Lehre Kit anorganische Strukturen Atom Link Model für Lehrer Studenten Chemieunterricht
    Publisher: Surplex,
    Year of publication: 2020
    Type of Medium: Book
    Language: German
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  • 34
    Book
    Book
    c't wissen DOCKER & Co. 2020 : komplexe Software einfach einrichten (2020)
    Heise Zeitschriften Verlag,
    Details
    Title: c't wissen DOCKER & Co. 2020 : komplexe Software einfach einrichten
    Author: c't-Redaktion
    Publisher: Heise Zeitschriften Verlag,
    Year of publication: 2020
    Type of Medium: Book
    Language: German
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  • 35
    Book
    Book
    ¬The¬ artist in the machine : the world of AI-powered creativity (2020)
    Cambridge ; London :MIT Press,
    Details
    Title: ¬The¬ artist in the machine : the world of AI-powered creativity
    Author: Miller, Arthur I.
    Edition: First MIT Press paperback edition
    Publisher: Cambridge ; London :MIT Press,
    Year of publication: 2020
    Pages: 432 399 Seiten
    ISBN: 978-0-262-53962-3
    Type of Medium: Book
    Language: English
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  • 36
    Book
    Book
    Using Python for introductory econometrics / (2020)
    New York :Indipendantly Published,
    Details
    Title: Using Python for introductory econometrics /
    Author: Heiss, Florian
    Contributer: Brunner, Daniel
    Edition: 1st edition
    Publisher: New York :Indipendantly Published,
    Year of publication: 2020
    Pages: 418 Seiten
    ISBN: 979-8-6484-3676-3
    Type of Medium: Book
    Language: English
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  • 37
    Book
    Book
    Computing : archives for informatics and numerical computation; Supplementum (1977-2003)
    Wien [u.a.] :Springer, ; 1.1977 - 16.2003; damit Ersch. eingest.
    Details
    Title: Computing : archives for informatics and numerical computation; Supplementum
    Publisher: Wien [u.a.] :Springer,
    Year of publication: 1977-2003
    Dates of Publication: 1.1977 - 16.2003; damit Ersch. eingest.
    Type of Medium: Book
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  • 38
    Electronic Resource
    Electronic Resource
    Micro-Raman scattering in laterally epitaxial overgrown GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5840-5852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, micro-Raman spectroscopy has been used to investigate the vibrational properties of laterally epitaxial overgrown (LEO) GaN. The LEO GaN films were grown by metal organic chemical vapor deposition on a 2 in. sapphire substrate with SiN mask. Photoluminescence and polarized Raman scattering measurements have been performed in the two regions of GaN growth (wing and window regions). Raman scattering results are consistent with the lateral growth of GaN in the overgrown region. We have observed second-order Raman scattering in the wing and window regions of GaN. The observations of longitudinal optical phonon plasmon modes in the overgrown region demonstrate that LEO GaN is doped. We have carried out micro-Raman mapping of the local strain and free carrier concentration in the LEO GaN. Anharmonicity due to temperature in LEO GaN has also been investigated. The anharmonicity was found to increase with increasing temperature, and such temperature-induced anharmonicity introduces changes in the linewidth and line center position of the Raman active phonons. The phonon lifetimes in GaN are estimated in the LEO region as well as in the coherently grown region (window region). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467952
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  • 39
    Electronic Resource
    Electronic Resource
    Latent track formation in GaAs irradiated with 20, 30, and 40 MeV fullerenes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5853-5857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural observations of gallium arsenide single crystals irradiated with a few tens of MeV C60 incident clusters (fullerenes) were performed. Normal and grazing incidences were investigated. Similar to in the case of silicon and germanium, cylindrical amorphous tracks whose diameters vary as a function of the projectile energy were found. However, for a given energy of the clusters, the track diameters are slightly different from one material to another. Also depending on the fullerene, energy is the length of the amorphous cylinder that formed along the projectile's path. The recrystallization process under an electron beam during transmission electron microscopy observation was analyzed and a higher growth rate for gallium arsenide compared to that of germanium was seen. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467962
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  • 40
    Electronic Resource
    Electronic Resource
    Response of silicon carbide to high velocity impact (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5858-5866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents an analysis of the response of silicon carbide to high velocity impact. This includes a wide range of loading conditions that produce large strains, high strain rates, and high pressures. Experimental data from the literature are used to determine constants for the Johnson–Holmquist constitutive model for brittle materials (JH-1). It is possible to directly determine the strength and pressure response of the intact material from test data in the literature. After the ceramic has failed, however, there are not adequate experimental data to directly determine the response of the failed material. Instead, the response is inferred from a comparison of computational results to ballistic penetration test results. After the constants have been obtained for the JH-1 model, a wide range of computational results are compared to experimental data in the literature. Generally, the computational results are in good agreement with the experimental results. Included are computational results that model interface defeat, which occurs when a high velocity projectile impacts a ceramic target and then dwells on the surface of the ceramic with no significant penetration. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468903
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  • 41
    Electronic Resource
    Electronic Resource
    Chemical origin of the yellow luminescence in GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5867-5874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467605
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  • 42
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5875-5881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs strained quantum well (SQW) samples with lattice matched InGaAsP quaternary barriers are grown on GaAs substrates by metalorganic vapor phase epitaxy. These SQW samples are characterized using photoluminescence, photomodulated reflectance, surface photovoltage spectroscopy and high-resolution x-ray diffraction techniques. The results based on numerical calculations are used to identify the various transitions seen in the spectra. The effect of growth temperature on the indium content of the InGaAs SQW with lattice matched InGaAsP quaternary barriers is studied. Contrary to the reported higher value of indium incorporation in InGaAs SQW with GaAs (In-free) barriers when the growth is performed at low temperatures, we find that the indium content of the InGaAs SQW with InGaAsP (In-based) quaternary barriers decreases if the SQW is grown at lower growth temperatures. A possible explanation for this behavior is provided. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464210
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  • 43
    Electronic Resource
    Electronic Resource
    Band gap in epitaxial NaCl-structure CrN(001) layers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5882-5886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: B1–NaCl-structure CrN(001) layers were grown on MgO(001) at 600 °C by ultrahigh vacuum reactive magnetron sputter deposition in pure N2 discharges. X-ray diffraction analyses establish the epitaxial relationship as cube-on-cube, (001)CrN(parallel)(001)MgO with [100]CrN(parallel)[100]MgO, while temperature-dependent measurements show that the previously reported phase transition to the orthorhombic Pnma structure is, due to epitaxial constraints, absent in our layers. The resistivity increases with decreasing temperature, from 0.028 Ω cm at 400 K to 271 Ω cm at 20 K, indicating semiconducting behavior with hopping conduction. Optical absorption is low (α〈2×104 cm−1) for photon energies below 0.7 eV and increases steeply at higher energies. In situ ultraviolet photoelectron spectra indicate that the density of states vanishes at the Fermi level. The overall results provide evidence for CrN exhibiting a Mott–Hubbard type band gap. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466528
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  • 44
    Electronic Resource
    Electronic Resource
    Analysis of dual-band quantum well photodetectors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5887-5891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a simple model for quantum well photodetectors for simultaneous middle infrared and near infrared or visible dual-band detection. We derive analytical formulas for the responsivity and detectivity as functions of the material and structural parameters. It is shown that the characteristics of near infrared and visible radiation detection can be sensitive to parameters of the hole transport, capture into quantum wells, and reflection from the electron emitting contact. We demonstrate that a properly designed photodetector can exhibit comparable performance for both middle infrared and near infrared (or visible) detection. The obtained results can be used to optimize the photodetector design and characteristics in both spectral ranges. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467604
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  • 45
    Electronic Resource
    Electronic Resource
    Interaction of As impurities with 30° partial dislocations in Si: An ab initio investigation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5892-5895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated through ab initio total energy calculations the interaction of arsenic impurities with the core of a 30° partial dislocation in silicon. It was found that when an arsenic atom sits in a crystalline position near the dislocation core, there is charge transfer from the arsenic towards the dislocation core. As a result, the arsenic becomes positively charged and the core negatively charged. The results indicate that the structural changes around the impurity are very small in both environments, namely, the crystal and the dislocation core. In this scenario, the interaction between arsenic and the core is essentially electrostatic, which eventually leads to arsenic segregation. The segregation energy was found to be as large as 0.5 eV/atom. Additionally, it was found that arsenic pairing inside the core is not energetically favorable. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466877
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  • 46
    Electronic Resource
    Electronic Resource
    Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5896-5901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on inelastic electron tunneling spectroscopy of a tunneling metal–oxide–semiconductor (MOS) device over an extended energy range compared to previous results. We have clearly observed the vibrations of the hydrogen-passivated (111)Si Pb center in this extended energy range. The assignment of this mode has been confirmed by a comparison with infrared experiments. Capabilities and limitations of the technique to detect and observe molecular vibrations in tunneling MOS devices are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462423
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  • 47
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing in GaNxAs1−x/GaAs structures: Effect of nitrogen reorganization on optical properties (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5902-5908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) properties of GaNxAs1−x/GaAs structures. In particular, a blueshift of the PL peak energy is observed when annealing the samples. The results are examined as a consequence of a RTA-induced nitrogen diffusion inside the GaNxAs1−x material rather than diffusion out of the alloy, which homogenizes initial nitrogen composition fluctuations. We propose a simple model that describes the RTA-induced blueshift of the low temperature PL peak energy. This model is in good agreement with experimental results and is consistent with recent studies in which lateral composition fluctuations in the GaNAs alloy were reported. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467957
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  • 48
    Electronic Resource
    Electronic Resource
    Band gap energy bowing and residual strain in CuAl(SxSe1−x)2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5909-5914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quadratic dependence of the band gap energy on the alloy composition x was quantified for CuAl(SxSe1−x)2 films grown by low-pressure metalorganic vapor phase epitaxy, by means of photoreflectance and photoluminescence excitation spectroscopies. The bowing parameter for the A-exciton energy was estimated to be 0.20 eV. Several high-quality films grown on GaAs(001) substrates exhibited excitonic photoluminescence peaks in the blue to ultraviolet spectral ranges. The flow rate of the Al precursor was found to affect the incorporation ratio of S/Se, indicating that the Al–S compound plays a key role in controlling x. All films grown on GaAs(001) showed c(001) orientation. Conversely, the epitaxitial orientation of the films on GaP(001) changed from a(100) to c(001) with an increase in x. The critical value of x was around 0.5. The preferred orientations were explained by the natural selection rule under which the lattice strain in the epilayer is minimized. The residual strain in the 0.5-μm-thick epilayers on GaAs(001) was nearly constant for all x, although the lattice mismatch between the epilayer and the GaAs substrate varied from 0.62% to 5.39% with an increase in x. Consequently the strain was attributed to thermal stress. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468907
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  • 49
    Electronic Resource
    Electronic Resource
    Low-temperature dependence of midinfrared optical constants of lead–germanium–telluride thin film (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3556-3561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design and manufacture of diode lasers for gas analysis or multilayer thin-film optical devices used at low-temperature require the refractive index and the temperature coefficient of IV–VI compound over a significant temperature range. In this article, the refractive index and the absorption coefficient of Pb0.94Ge0.06Te thin film have been determined from transmission spectra measured at temperature between 80 and 300 K in the spectral range of 2.5–8.5 μm by fitting based on a Lorentz-oscillator model. It is found that the maximum refractive index occurs at 150 K, which corresponds to the structural phase transition from rocksalt to rhombohedrally distorted structure and reflects an increase of lattice polarizability. The value of the index of refraction is 5.350–6.000 in the spectral range of 4.0–8.5 μm for all measured temperatures, which reveals that Pb1−xGexTe is a highly refractive infrared material. The temperature coefficient of refractive index, dn/dT, is found to be −0.006–0.002 K−1 in the spectral range of 3.0–8.5 μm for all measured temperature. An empirical formula that fits the temperature coefficient in the spectral range of 4.0-8.5 μm is presented. The dependence of the transmission and absorption spectra on decreasing temperature can be explained by the modification of the energy-band structure due to rhombohedral distortions. The conclusion can be drawn that anomalies corresponding to the ferroelectric phase transition occur in both refractive index and absorption coefficient of Pb1−xGexTe alloy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448866
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  • 50
    Electronic Resource
    Electronic Resource
    Study of argon characteristics in ion physical vapor deposition using molecular dynamics simulation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3569-3578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article uses molecular dynamics simulation to investigate the role of Ar ions in the ion physical vapor deposition (IPVD) process for different Ar+-to-Cu+ ratios, and to analyze the influence of different Ar+-to-Cu+ ratios on the trench filling morphology. Also compared are the trench filling morphology observed for the IPVD process with that found in the conventional collimated magnetron deposition process. The molecular dynamics simulation includes a trench model and a deposition model, and uses the many-body, tight-binding potential method to represent the interatomic force acting among neutral atoms. The interatomic force acting between the ions and the neutral atoms is modeled by the pairwise Moliere potential method. The simulation indicates that the incident Ar ions influence the trench filling mechanisms in two significant ways; peeling of the cluster atoms, which promotes migration of the cluster atoms along the sidewall, and breaking of the bridge which forms when two clusters of atoms join. Both phenomena are beneficial since they promote a more complete filling of the trench. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450032
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  • 51
    Electronic Resource
    Electronic Resource
    Influence of interstitial nitrogen on the structural and magnetic properties of FeCoV/TiNx multilayers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3750-3758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeCoV/TiNx and FeCoV/Ti multilayers having tFeCoV=30–700 Å prepared by dc magnetron sputtering are investigated by x-ray diffraction, stress, and magnetization measurements. The x-ray diffraction data of the FeCoV/TiNx system show the presence of interstitial N atoms in the FeCoV layers due to reactive sputtering of Ti with nitrogen. The interstitial N causes an expansion of the FeCoV lattice in FeCoV/TiNx for small tFeCoV. However, for the samples with large tFeCoV, no lattice expansion is observed. In addition to the lattice expansion caused by the intake of N atoms, a change in the crystalline texture of FeCoV layers is also observed as indicated by the enhancement of the FeCoV(200) peaks. The magnetic hysteresis measurements on the samples show that the easy direction of magnetization lies in the plane of the layers. They further show that there are easy and hard axes of magnetization within the plane of the FeCoV layers. The stress anisotropy present in the plane of the samples induces a magnetic anisotropy through magnetostrictive effects leading to the formation of the in- plane easy axis. The hysteresis and stress measurements carried out on these samples clearly show the influence of N on the in-plane magnetic anisotropy. The magnetoelastic energy in the case of the FeCoV/TiNx system, calculated from the stress data and from the magnetization measurements as a function of tFeCoV is found to agree over a large range of thickness, whereas the curves deviate significantly for small layer thickness. This deviation may be due to the role of the FeCoVNx phase. Hysteresis measurements also show that the remanence is about 95% for all the samples of the FeCoV/TiNx system. In contrast, the coercivity increases linearly with increasing tFeCoV in this system. The coercivity of the FeCoV/Ti system is larger and increases more rapidly with tFeCoV, as compared with the FeCoV/TiNx system. This behavior is attributed to a smaller grain size in the FeCoV/TiNx system due to the reactive sputtering of the Ti layers. However, there is no significant influence of N on the saturation magnetization of both systems. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450259
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  • 52
    Electronic Resource
    Electronic Resource
    Magnetic properties of Nd–Fe–Co(Cu)–Al–B amorphous alloys prepared by nonequilibrium techniques (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3764-3768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous alloys Nd40Fe40Co5Al8B7, Nd57Fe20Co5Al10B8, and Nd57Fe20Cu5Al10B8 were prepared by copper mold casting, melt spinning, and mechanical alloying. Despite their similar x-ray diffraction patterns, samples display different magnetic and thermal behavior correlated with the method of preparation. The fully amorphous melt-spun ribbons exhibit relatively soft magnetic properties with coercivities (approximate)40 kA/m at room temperature and a Curie temperature (TC)(approximate)474 K. Apparently only the mold-cast cylinders of 3 mm diameter show hard magnetic behavior with a coercivity in the range of 258–270 kA/m (depending on composition) and have approximately the same TC as that of the melt-spun ribbons. An additional magnetic transition at 585 K due to the presence of Nd2Fe14B phase in the case of Nd40Fe40Co5Al8B7 cast rod has been observed. Heat treatment above crystallization temperature in as-cast Nd57Fe20Co5Al10B8 and Nd57Fe20Cu5Al10B8 samples destroys the hard magnetic properties. In contrast, mechanically alloyed amorphous samples are soft magnetic with maximum coercivity up to 11 kA/m but show an entirely different TC(approximate)680–740 K, which is rather characteristic of an Fe solid solution. The magnetic properties are discussed in terms of different local atomic environment and cluster sizes in amorphous samples prepared by different methods. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448884
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  • 53
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    Electronic Resource
    Effects of C content on the formation and magnetic properties of Nd2Fe14(BC)/α-Fe nanocomposite magnets (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3769-3774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase evolution, microstructure, and magnetic properties of Nd8Fe86B6−xCx (x=0, 2, 4, 5, 6) melt-spun ribbons were systematically studied as a function of C content. It was found that the addition of C decreases the glass-forming tendency of the as-spun ribbons significantly. A uniform nanoscale exchange coupled Nd2Fe14(BC)/α-Fe microstructure with an average grain size of 20–25 nm can be developed in the directly quenched ribbons with C contents up to 4 at. %. Further increase of C content to x=5 leads to, in the optimally quenched ribbons, the presence of an undesirable Nd2Fe17Cx phase in addition to the 2:14:1 and α-Fe phases, whereas the alloy ribbon containing 6 at. % C consists almost entirely of the soft magnetic Nd2Fe17Cx and α-Fe phases. Subsequent annealing induces a transformation of the 2:17:Cx phase to the 2:14:1 phase +α-Fe in the ribbons with x=5 and 6, resulting in the formation of a composite 2:14:1/α-Fe structure having relatively large crystallite sizes. Magnetic measurements revealed that, for the optimally processed samples, replacement of up to 4 at. % of B by C significantly increases the coercivity iHc, with only slight reduction in remanence Jr; an optimum coercivity of 542 kA/m was obtained in the Nd8Fe86B2C4 ribbon compared with 430 kA/m for the Nd8Fe86B6 ribbon. Excessive substitution of C (x〉4) causes a drastic deterioration of both iHc and Jr due to the microstructural coarsening. Moreover, the Curie temperature of the 2:14:1 phase in the samples decreases progressively with increasing C content from 312 °C for x=0 to 270 °C for x=6. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450037
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  • 54
    Electronic Resource
    Electronic Resource
    Scanning force microscopy of domain structures in Pb(Zn1/3Nb2/3)O3-8% PbTiO3 and Pb(Mg1/3Nb2/3)O3-29% PbTiO3 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3797-3805 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain structures of unpoled as well as poled (along [001]- and [110]-direction) Pb(Zn1/3Nb2/3)O3 (PZN)-8% PbTiO3 (PT) and Pb(Mg1/3Nb2/3)O3 (PMN)-29% PT single crystals have been investigated by scanning force microscopy (SFM) in the piezoresponse mode, at room temperature. Antiparallel domain structures have been detected mostly in unpoled crystals of both materials, with a fingerprint pattern in (001)-oriented PZN-8% PT crystal. The ferroelastic domain wall has been identified in poled (110)-oriented PZN-8% PT crystal. "Writing" of ferroelectric domains has been performed by applying a dc voltage to the SFM tip. Local re-poling has been observed for all unpoled as well as for poled (001)-oriented crystals at the voltage ±60 V. Local electrical switching was successful in poled (110)-oriented PMN-29% PT at higher voltage (±120 V) but was not successful in poled (110)-oriented PZN-8% PT crystal. Domain-engineered crystals poled in [110]-direction seem to exhibit more stable (in the sense of local re-poling properties) domain arrangement. Hysteretic d(E) dependencies were observed by local application of an ac voltage. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446655
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  • 55
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    Elastic and piezoelectric fields around a quantum dot: Fully coupled or semicoupled model? (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3785-3796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the study of elastic and piezoelectric fields in semiconductors due to buried quantum dots (QDs), the semicoupled piezoelectric model is commonly adopted. However, its accuracy and suitability have never been studied. In this article, by developing a fully coupled piezoelectric model and deriving the analytical elastic and piezoelectric fields based on this and the semicoupled models, we are able to verify that when the piezoelectric coupling is weak, like GaAs with the electromechanical coupling factor g=0.04, the semicoupled model predicts very accurate results as compared to those based on the fully coupled model. However, if the piezoelectric coupling is relatively strong, like AlN with g=0.32, we have shown that the semicoupled model gives very serious errors or even totally wrong results. Applying these two models to a uniformly strained AlN layer grown along the polar axis has also confirmed our observation. Therefore, for semiconductors like AlN, the fully coupled model presented in this article must be employed in order to give a reliable and accurate prediction for the elastic and piezoelectric fields. Also presented in this article is the distribution of the piezoelectric field on the surface of a half-space GaAs due to a buried QD located at 2 nm below the surface with a volume 4π/3 (nm)3. It is observed that the horizontal electric field on the traction-free and insulating surface shows some special features and its maximum magnitude can be as high as 3.5×107 V/m when the uniform mismatch eigenstrain is 0.07. Furthermore, the piezoelectric field on the traction-free and conducting surface exhibits different characters as compared to the traction-free and insulating case. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448869
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    Characterization of reflectivity inversion, α- and β-phase transitions and nanostructure formation in hydrogen activated thin Pd films on silicon based substrates (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3829-3840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically thin palladium metal films evaporated on different silicon based substrates are investigated following exposure to different concentrations of hydrogen gas in air. Laser modulated reflectance off the palladium surface of silicon oxide and silicon nitride substrates is used to recover information regarding the reflectivity inversion and α/β-phases of the palladium complex after both first and multiple gas cycling. Atomic force microscopy confirms the formation of metal nanostructures following exposure to hydrogen of the optically thin palladium films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417992
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  • 57
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    Carbon nanotubes synthesized by Ni-assisted atmospheric pressure thermal chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3847-3854 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed systematic study on the growth morphology of carbon nanotubes (CNTs) on Si in atmospheric pressure thermal chemical vapor deposition was undertaken. The role of NH3 for vertical alignment of CNTs was investigated. The direct cause for the alignment was a dense distribution of the catalytic metal particles, but that the particles are maintained catalytically active under amorphous carbon deposits was established by NH3. It allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grew in a base growth mode. Since Ni is consumed both by silicide reaction and by capture into the growing tube, the growth stops when Ni is totally depleted. It occurs earlier for smaller particles, and thus a long time of growth results in a thin bottom with poor adhesion. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448877
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  • 58
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    Thermal stability and performance reliability of Pt/Ti/WSi/Ni ohmic contacts to n-SiC for high temperature and pulsed power device applications (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3864-3868 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/Ti/WSi/Ni ohmic contacts to n-SiC, initially annealed at 950 and 1000 °C for 30 s, were evaluated for thermal stability via pulsed/cyclic thermal fatigue and aging experiments at 650 °C. Modifications of material properties in response to cyclic thermal fatigue and aging tests were quantitatively assessed via current–voltage measurements, field emission scanning microscopy, atomic force microscopy, and Rutherford backscattering spectrometry. Negligible changes in the electrical properties, microstructure, and surface morphology/roughness were observed for both annealed ohmic contacts in response to 100 cycles of acute cyclic thermal fatigue. Aging of the 950 °C annealed contact for 75 h at 650 °C resulted in electrical failure and chemical interdiffusion/reaction between the contact and SiC substrate. The 1000 °C annealed contact retained ohmicity after 100 h of aging and was found to be chemically and microstructurally stable. These findings indicate that the 1000 °C annealed Pt/Ti/WSi/Ni ohmic contact to n-SiC is thermally stable and merits strong potential for utilization in high temperature and pulsed power devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450024
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  • 59
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    Structural properties of undoped and doped cubic GaN grown on SiC(001) (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4983-4987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults (SFs) in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act as nucleation sites for precipitates of residual impurities such as C and Si present in the GaN layers grown on SiC(001) substrates. We used the imaging secondary ion mass spectroscopy technique to locate these impurities. The systematic decrease of the SF density as a function of the layer thickness is explained by an annihilation mechanism. Finally, the effects of usual dopants on the structural properties of GaN layers are discussed. It is shown that Mg has a tendency to incorporate out of the Ga site by forming Mg precipitates for a concentration higher than 1019 cm−3 in contrast with the results found for heavily Si doped layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456243
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  • 60
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    Thermally stimulated photoluminescence in poly(2,5-dioctoxy p-phenylene vinylene) (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5016-5023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of thermally stimulated photoluminescence (TSL) measurements in poly(2,5-dioctoxy p-phenylene vinylene) (DOO–PPV) are reported. The obtained results are analyzed in terms of the hopping model of TSL in disordered organic materials. It is shown that the experimentally obtained TSL curve can be fitted on the basis of a double-peak Gaussian density-of-states distribution. The upper peak is associated with intrinsic localized states while the lower one can be ascribed to aggregates. The latter assignment is also supported by measurements of steady-state and time-resolved photoluminescence in DOO–PPV films and solutions. Possible mechanisms of charge carrier photogeneration in DOO–PPV are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464235
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  • 61
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    Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5029-5034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical analysis based on a perturbation method is used to elucidate the results of attenuated total reflection (ATR) measurements performed on silicon oxide layers of different thicknesses on silicon substrates. This analysis shows that the absorbance ATR spectrum in p polarization is the image of the layer energy loss function, under specific conditions. It is pointed out that the enhanced sensitivity of ATR is controlled by the air gap thickness, the optical properties of the media involved, and the probing light polarization. An exact ATR spectrum simulation using a matrix formalism showed that straightforward interpretation in terms of the layer dielectric function is limited to a very narrow layer thickness range. The ATR spectrum fitting process is considered for layers out of this range and evaluated for the interpretation of experimental silicon oxide layer spectra. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464231
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  • 62
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    Enhanced efficiency of PbWO4:Mo,Nb scintillator (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5041-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Nb codoping on the optical properties of the PbWO4:Mo scintillator is investigated by radio- and thermoluminescence, scintillation decay, and light yield measurements. Steady-state radioluminescence efficiency of PbWO4:Mo,Nb with optimized doping concentrations (2750 and 350 molar ppm, respectively) becomes up to 20 times higher with respect to that of undoped PbWO4 and is comparable to that of Bi3Ge4O12. However, slow components down to several tens of microseconds appear in the time decay. Their existence may be related to the presence of traps monitored by thermoluminescence. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462420
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  • 63
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    Negative thermal expansion behavior in single crystal and ceramic of Nb2O5-based compositions (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5051-5054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal expansion coefficients of a single crystal and ceramic of Nb2O5 are measured in the temperature range of −200–500 °C by the dilatometer technique. Both single crystals and ceramics of Nb2O5 and Nb2O5(1−x):xTiO2 show negative thermal expansion in this temperature range. Some contribution to the result could be due to the presence of the Magneli phases. The main phase transition temperature, which also matches with the dielectric anomaly, occurs at (approximate)150 °C. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464232
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  • 64
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    Recombination dynamics for photogenerated carriers in germanium-doped ZnSe epilayers grown by molecular beam epitaxy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5066-5071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium-doped ZnSe epilayers have been grown on (001)-oriented semi-insulating GaAs substrates by molecular beam epitaxy. The photoluminescence (PL) spectra exhibit strong near-band edge emission similar to those from undoped, chlorine-doped and gallium-doped samples, though some differences exist. The prominent PL peak at 2.795 eV (10 K) is attributed to the germanium-bound exciton recombination and is accompanied by free exciton (2.802 eV), Ia-type exciton (2.785 eV) and Iv-type exciton (2.775 eV) emission peaks. Following an increase in temperature, the intensity of all the IGe, Ia, and Iv emission peaks decreases gradually, indicating the presence of nonradiative recombination mechanisms with thermal activation energies of 40, 70, and 50 meV respectively. However, for the Iv peak, there is one additional nonradiative recombination mechanism in accordance with the thermally activated transfer of excitons from the Iv-type centers to Ia-type centers. This nonradiative recombination mechanism with activation energy of 9 meV is responsible for the decrease of the Iv peak intensity when the sample temperature is changed from 15 to 100 K. Following an increase in temperature, the Iv peak, Ia peak, and germanium-related peak disappear gradually and successively. Finally, the PL spectrum is dominated by free exciton emission at temperatures exceeding 210 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461899
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  • 65
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    Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5089-5092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic property variations of a two-dimensional electron gas (2DEG) in modulation-doped step quantum wells due to an embedded potential barrier were studied by performing Shubnikov–de Haas (SdH), Van der Pauw–Hall-effect, and cyclotron resonance measurements on two kinds of InxGa1−xAs/InyAl1−yAs step quantum wells which were one without and the other with an embedded barrier. The fast Fourier transformation results for the SdH data at 1.5 K indicated the electron occupation of two subbands in both step quantum wells. The total electron carrier density and the mobility of the 2DEG in the step quantum well with an embedded barrier were smaller than those in the quantum well without an embedded barrier. The electron effective masses were determined from the slopes of the main peak absorption energies as functions of the magnetic field, and satisfied qualitatively the nonparabolicity effects in both quantum wells. The electronic subband energies, the wave functions, and the Fermi energies were calculated by using a self-consistent method taking into account exchange-correlation effects together with strain and nonparabolicity effects. These present results indicate that the electronic parameters in modulation-doped InxGa1−xAs/InyAl1−yAs step quantum wells are significantly affected by an embedded barrier. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454198
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  • 66
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    Direct and trap-assisted elastic tunneling through ultrathin gate oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5116-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct and assisted-by-trap elastic tunnel current in metal–oxide–semiconductor capacitors with ultrathin gate oxide (1.5–3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461062
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  • 67
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    Electronic structure of ytterbium-doped strontium fluoroapatite: Photoemission and photoabsorption investigation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5135-5140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission and x-ray photoabsorption were used to study the composition and the electronic structure of ytterbium-doped strontium fluoroapatite (Yb:S-FAP). High resolution photoemission measurements on the valence band electronic structure and Sr 3d, P 2p and 2s, Yb 4d and 4p, F 1s, and O 1s core lines were used to evaluate the surface and near surface chemistry of this fluoroapatite. Element specific density of unoccupied electronic states in Yb:S-FAP were probed by x-ray absorption spectroscopy at the Yb 4d (N4,5 edge), Sr 3d (M4,5 edge), P 2p (L2,3 edge), F 1s, and O 1s (K edges) absorption edges. These results provide measurements of the electronic structure and surface chemistry of this material. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459601
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  • 68
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    Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5149-5154 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extremely thin titanium nitride (TiN) barrier layers for Cu based interconnects were deposited using metal organic chemical vapor deposition. The effect of the subsequently performed nitrogen/hydrogen plasma treatment on the microstructure, composition, and electrical properties of these films is studied using conventional and high resolution transmission electron microscopy, Auger electron spectroscopy, and four point probe resistivity measurements. In the studied system the crystallization of the TiN film starts from an amorphous matrix and a polycrystalline morphology is developed upon the H2/N2 plasma treatment. After a short plasma treatment, most of the film is already crystalline and consists of grains of a few nanometers in diameter. Continued plasma treatment leads to grain growth and a significant reduction of contaminants such as oxygen and carbon. The resistivity of the films drops with plasma treatment time, and a correlation between resistivity and oxygen content is found, which suggests that oxygen in the grain boundaries plays a decisive role for the resistivity of the films. It is shown that the oxygen in the grain boundaries leads to an electron reflectance of 0.9. Thus, the oxygen accumulation in the grain boundaries is the limiting factor for the reduction of film resistivity by plasma treatment. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459750
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  • 69
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    Effects of the number of periods on strain in superlattices (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5155-5157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of periods on the accumulation and release of stress in GaAs/AlInAs superlattices structure is reported here. It is observed that in GaAs/AlInAs superlattices, when the Indium (In) content is greater than 10%, stress accumulates monotonically as the number of period increases. In GaAs/AlInAs superlattices with an In content of 5%, the accumulated stress is larger when the number of periods is less than 10. However when the number of periods exceeds 10, it was observed that suddenly there is a significant increase in defects and stress release. However, with any further increase in period number, there is once again an accumulation of stress. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462419
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  • 70
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    Deep levels in strongly Si-compensated GaAs and AlGaAs (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5158-5162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Five electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1−xAs of low Al content with a Si concentration of above 1×1019 cm−3 using deep level transient spectroscopy. The junctions were grown by liquid phase epitaxy and were strongly compensated. The traps were investigated for functions of the Si concentration and the AlAs mole fraction. The traps are discussed in terms using their spectra and concentration as opposed to the previous results which used point defects in the GaAs and AlGaAs. The traps show distinctive features, which can be attributed to strongly Si-compensated crystals. Three traps among them were confirmed to be DX centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462847
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  • 71
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    Transient response of a bilayer organic light emitting diode: Building-up of external and recombination currents (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5170-5175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a theoretical model of a bilayer organic light emitting diode, we calculate numerically the evolution of carrier densities and electric fields inside the device. The obtained results allow us to detail injection and accumulation of carriers during transient excitation. Charge densities as a function of applied voltage present two distinct thresholds which determine three operating ranges: no injection, unipolar injection, and bipolar injection. Dynamically these thresholds depend on the rise time of the applied voltage and have a clear signature in the current densities. We show that the electroluminescence threshold has static and dynamic values which may be different. Calculated external current in response to a voltage ramp presents two steps related to the evolution of the capacity of the device. This capacitive behavior is observed experimentally. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464212
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  • 72
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    Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5176-5181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper analyzes a simplified rate equation model of localized exciton emission in GaInN. Expressions for temperature dependent photoluminescence (PL) efficiency and decay time are derived and compared with time integrated (TIPL) and time resolved photoluminescence (TRPL) data for a series of multiquantum well light emitting diodes with varying In composition in the active region. Time resolved photoluminescence is measured up to relatively high temperature (540 K) and a decreasing efficiency coupled with a peak energy decay time that is weakly dependent on temperature is observed. The decay time at peak emission energy begins to decrease at a temperature that depends on the In content in the quantum wells. The analysis developed here demonstrates that application of the expressions τr=τpl/η and τnr=τpl/(1−η) is not sufficient to determine radiative and nonradiative lifetimes from TRPL and TIPL data in the GaInN system. (Here τr is the radiative decay time, τnr is the nonradiative decay time, τpl is the measured PL decay time, and η is the measured TIPL intensity normalized to the low temperature intensity.) GaInN with even small amounts of In exhibits highly efficient luminescence due to recombination through localizing centers. As relaxation occurs into both defects and localizing states after initial generation with the above GaInN band gap excitation, the number of carriers arriving at localization centers can change with temperature. This temperature dependent change should be considered when calculating relevant decay times from TRPL and TIPL data. This mechanism is distinct from an increase in the intrinsic radiative decay time obtained by applying conventional analysis to extract radiative and nonradiative lifetimes from TRPL and TIPL data. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459106
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  • 73
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    Avalanche breakdown voltage of In0.53Ga0.47As (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5200-5202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Avalanche breakdown voltages were determined for a series of In0.53Ga0.47As p-i-n diodes with i-region thicknesses ranging from 0.4 to 4.79 μm using measurements of reverse dark current and phase-sensitive photomultiplication. Despite its narrower bandgap In0.53Ga0.47As is found to have a very similar breakdown voltage to GaAs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462845
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  • 74
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    Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5203-5207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I–V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465119
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  • 75
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    Current and voltage noise in WO3 nanoparticle films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5221-5226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current and voltage noise measurements have been carried out on nanoparticle WO3 films. The fluctuation dissipation theorem holds, which indicates that the observed noise is an equilibrium phenomenon. Results on the thinnest films show that noise measurements can be used for quality assessment of nanocrystalline insulating films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423398
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  • 76
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    Effects of transition metal substitution on the glass-formation ability and magnetic properties of Fe62Co9.5Nd3Dy0.5B25 glassy alloy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5227-5229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe–Co–Nd–Dy–B glassy alloys are a current type of ferromagnetic material. To increase their glass-forming ability against the growth of a crystallization phase, the effects of the addition of transition metals TM (TM=V, Nb, Ta, Cr, Mo, and W) on the glass-formation ability and magnetic properties of Fe62Co9.5Nd3Dy0.5B25 glassy alloy have been investigated. The substitution of 2 at. % elements TM (=Nb, Ta, Mo, and W) for Fe and Co increases crystallization temperature Tx and decreases the onset temperature of solidification Tm, leading to a significant increase in the thermal stability against crystallization for Fe60.3Co9.2TM2Nd3Dy0.5B25. The difference (ΔTx=Tx−Tg) between Tx and the glass transition temperature Tg increases from 55 K at 0 at. % TM to 87 K at 2 at. % TM. The bulk glassy alloy with a diameter up to 1.2 mm was produced by copper mold casting. Also no distinct changes in Tg, Tx and ΔTx are seen for the addition of Cr and V. The results can be explained by the difference of atomic size in the additional elements. The saturation magnetization decreases slightly by the addition of 2 at. % TM elements. The saturation magnetization and coercive force of glassy Fe60.3Co9.2TM2Nd3Dy0.5B25 alloys are 1.13 to 1.19 T and 3.85–4.98 A/m, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1457538
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  • 77
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    Effect of Ti seed layer on the magnetization reversal process of Co/NiFe/Al-oxide/NiFe junction films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5234-5239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti/Co/NiFe/Al-oxide/NiFe (F1) and Co/NiFe/Al-oxide/NiFe (F2) junction films were characterized using high-resolution electron microscopy (HREM), Lorentz transmission electron microscopy (LTEM), and alternating gradient force magnetometry (AGFM). HREM images showed that the Ti seed layer induced a strong 〈111〉 texture in the bottom Co/NiFe bilayer. The ferromagnet/Al-oxide interfaces in F1 showed correlated waviness, while the interface waviness in F2 appeared uncorrelated. Thus, "orange-peel" coupling effect was more significant in F1 than in F2, which was confirmed by the steep slope of the magnetization curve in the "antiparallel" magnetization configuration for F1. The LTEM in situ magnetizing experiment results and the AGFM measurement of magnetization curves showed that both junction films possessed a two-stage magnetization reversal characteristic—magnetization of the top NiFe layer reversed first followed by the reversal of the bottom Co/NiFe bilayer. LTEM observation revealed that the magnetization reversal of the top NiFe layer was via domain wall motion, while the reversal of the bottom Co/NiFe bilayers was mainly by wall motion together with a small degree of moment rotation. Domain wall mobility in the Co/NiFe bilayer of F1 was higher due to the strong crystallographic texture and large grain size appeared in the bilayer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459598
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    Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5246-5249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present here a magnetic tunnel junction device using perpendicular magnetization films designed for magnetic random access memory (MRAM). In order to achieve high-density MRAM, magnetic tunnel junction devices with a small area of low aspect ratio (length/width) is required. However, all MRAMs reported so far consist of in-plane magnetization films, which require an aspect ratio of 2 or more in order to reduce magnetization curling at the edge. Meanwhile, a perpendicular magnetic tunnel junction (pMTJ) can achieve an aspect ratio=1 because the low saturation magnetization does not cause magnetization curling. Magnetic-force microscope shows that stable and uniform magnetization states were observed in 0.3 μm×0.3 μm perpendicular magnetization film fabricated by focused-ion beam. In contrast, in-plane magnetization films clearly show the presence of magnetization vortices at 0.5 μm×0.5 μm, which show the impossibility of information storage. The PMTJ shows a magnetoresistive (MR) ratio larger than 50% with a squareness ratio of 1 and no degradation of MR ratio at 103 Ω μm2 ordered junction resistance. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459605
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  • 79
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    Transverse demagnetizing factors of long rectangular bars. II. Numerical calculations for arbitrary susceptibility (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5260-5267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For an infinitely long bar with rectangular cross section 2a×2b and constant susceptibility χ in a uniform transverse applied field Ha along dimension a, the fluxmetric and magnetometric demagnetizing factors Nf,m as functions of a/b and χ are accurately computed using a finite-elements method. By comparison of the computed results with exact analytical results for χ=−1,0,∞ and with a set of conjugate relations derived in this work, the elements distributions have been optimized to give a minimum discretization error. This error is further greatly reduced in the final results of Nf,m by using an error correction approach previously proposed in a similar work for cylinders. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459746
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  • 80
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    Enhanced thermally induced stress effect on an ultrathin gate oxide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thermal stress on the electrical characteristics of metal–oxide–semiconductor diodes with oxides in an ultrathin regime were studied. By centering a quartz ring as a heat sink beneath the silicon wafer, the introduced temperature gradient results in a corresponding hat-like shape thickness distribution for an oxide grown on the wafer with a rapid thermal processing system. The enhanced exterior tensile and compressive thermal stresses due to introduced temperature gradient make the oxides exhibit less and more substrate injection saturation current Jsat, respectively, in comparison to control oxides. Their flatband voltage VFB data also clearly show the dependency of effective charge number density Neff on exterior thermal stress. A stress distribution model is proposed to explain the observation. Co-60 irradiation was also performed on the stressed samples to observe this stress extent by examining the variation of electrical characteristics. It was found that an oxide grown on a wafer in exterior compression exhibited better radiation hardness than one in tension. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452763
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  • 81
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    Stable field emission with low threshold field from amorphous carbon films due to layer-by-layer hydrogen plasma annealing (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5434-5437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The layer-by-layer hydrogen plasma treatment method, alternatively repeating the process of nanometer thickness film deposition and hydrogen plasma chemical annealing, was applied to fabricate amorphous carbon (a-C) films. It was shown that hydrogen plasma treatment reduced the size of sp2 clusters and resulted in the increase of the optical band gap. Consequently, a stable vacuum electron emission with a low threshold field was achieved from layer-by-layer hydrogen plasma annealed a-C films compared with that from conventionally deposited samples. The threshold electric field was as low as 2 V/μm. The improvement of field emission characteristics could be attributed to the large field enhancement effect due to the inhomogeneous distribution of nanometer scale sp2 clusters. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464211
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  • 82
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    Fokker–Planck approach to impact ionization distributions in space and time (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5438-5441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Fokker–Planck equation for carrier transport in semiconductors is derived from the Boltzmann transport equation by expanding in Legendre polynomials and assuming the phonon energy exchanged at momentum randomizing collisions is small compared with the mean carrier energy. The method is used to compute impact ionization probability distributions in space and time and the results agree well with those generated by an equivalent Monte Carlo model over a wide range of electric fields from 300 kV/cm to 1 MV/cm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458054
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  • 83
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    Dynamic high-strain-rate mechanical behavior of microstructurally biased two-phase TIB2+AL2O3 ceramics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1921-1927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic high-strain-rate behavior of two-phase TiB2+Al2O3 ceramics with biased microstructures was investigated in this study. The microstructural bias includes differences in phase (grain) size and phase distribution such that in one case a continuous (interconnected) TiB2 network surrounds the Al2O3 phase (qualitatively termed "T@A") and in another case the TiB2 and Al2O3 phases are interdispersed and uniformly intertwined with each other (qualitatively termed "TinA"). Quantitative microscopy was used to characterize the phase size and the integral curvature which is taken as a measure of TiB2 phase connectivity around Al2O3. Dynamic compression and tension (spall) properties were measured using plate impact experiments. The measurements used piezoelectric polyvinyldine fluoride stress gauges to obtain the loading profile and to determine the Hugoniot elastic limit. In addition, velocity interferometry system for any reflector interferometry was used to obtain the spall signal and the tensile dynamic strengths of the materials. Experimental results reveal that while the σHEL and the compressive strengths of TiB2+Al2O3 ceramics are dependent on the average grain (phase) size, the tensile (spall) strength scales with the TiB2-phase connectivity. This result suggests that the interconnected TiB2/Al2O3 microstructural morphology provides a stronger impediment to failure in tension compared with the morphology with simply interdispersed phases. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429770
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  • 84
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    Shadowing effects on the microstructure of obliquely deposited films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1963-1972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two spatial dimension front tracking simulations have been performed to study the growth of polycrystalline, faceted films from randomly oriented nuclei by varying the deposition angle of the incident flux during physical vapor deposition. The orientation of grain columns, the porosity, the crystallographic texture, and grain size are sensitive to the deposition angle. The origin of this effect is widely believed to be associated with shadowing. In order to isolate the effects of shadowing from other physical effects (such as surface diffusion, deposition species size, flux divergence, etc.), we have constructed a simulation where all of these effects are completely removed. These simulations demonstrate that while many of the observed structural properties of obliquely deposited films are controlled by shadowing, a few key properties cannot be attributed solely to shadowing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432125
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  • 85
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    Erratum: "Measurement and analysis of nonhydrostatic lattice strain component in niobium to 145 GPa under various fluid pressure-transmitting media" [J. Appl. Phys. 90, 3269 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5507-5507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464659
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  • 86
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    Erratum: "Ion-channeling analysis of boron clusters in silicon" [J. Appl. Phys. 90, 4741 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5507-5507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463446
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  • 87
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    Erratum: "Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells" [J. Appl. Phys. 90, 5388 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5508-5508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464647
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  • 88
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    Erratum: "Memory device applications of a conjugated polymer: Role of space charges" [J. Appl. Phys. 91, 2433 (2002)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5508-5508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1470663
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  • 89
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    Rare-earth doped polymers for planar optical amplifiers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3955-3980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguide amplifiers based on polymer materials offer a low-cost alternative for inorganic waveguide amplifiers. Due to the fact that their refractive index is similar to that of standard optical fibers, they can be easily coupled to existing fibers with low coupling losses. Doping the polymer with rare-earth ions that yield optical gain is not straightforward, as the rare-earth salts are poorly soluble in the polymer matrix. This review article focuses on two different approaches to dope a polymer waveguide with rare-earth ions. The first approach is based on organic cage-like complexes that encapsulate the rare-earth ion and are designed to provide coordination sites to bind the rare-earth ion and to shield it from the surrounding matrix. These complexes also offer the possibility of attaching a highly absorbing antenna group, which increases the pump efficiency significantly. The second approach to fabricate rare-earth doped polymer waveguides is obtained by combining the excellent properties of SiO2 as a host for rare-earth ions with the easy processing of polymers. This is done by doping polymers with Er-doped silica colloidal spheres. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454190
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  • 90
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    Band structures for nonlinear photonic crystals (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3988-3991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a method for calculating band structures for one-dimensional Kerr nonlinear photonic crystals, which exhibit an optical switching function. The band structure shows the allowed modes for the nonlinear photonic crystal as a function of the magnitude of the nonlinearity. The dielectric band is found to be most suited for the control beam as it is least effected by the nonlinearity. The third band is more sensitive to the nonlinearity and thus suited for the probe beam. Also the wavelength dependence of the switching function can be estimated using our method. The applied Fourier method is found to be robust in describing the effect of the nonlinearity. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450054
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  • 91
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    Impact of deformation potential scattering on free-carrier induced optical nonlinearities: An experimental study in GaAs (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3992-3999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of the experimental determination of the optical nonlinearities induced by heating free electrons distributed in the multivalley conduction band of highly doped n-GaAs. We propose a very sensitive multilayer leaky waveguide structure for transverse magnetic polarized waves in order to drastically reduce the required optical intensities. We explain in depth the dependence of the optical nonlinearity on doping concentration and deformation potentials. For a doping concentration no of 7.6×1018 cm−3, we found a nonlinear refractive index value n2(approximate)(1(minus-plus)0.2)×10−6 cm2/W at λ=10.6 μm, by fitting nonlinear reflection measurements with an equivalent intervalley deformation potential value ΛLL=(1.0±0.30)×109 eV/cm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448881
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  • 92
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    Superlattice-like structure for phase change optical recording (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3981-3987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the crystallization speed and data transfer rate (DTR), a superlattice-like structure (SLL) was applied to the recording layer of phase change optical disks. Unlike the conventional phase change layer, the recording layer with the SLL structure consisted of alternating thin layers of two different phase change materials, i.e., GeTe and Sb2Te3. Although neither GeTe nor Sb2Te3 could be used as a phase change layer material for practical applications, present experimental results revealed that the phase change optical disk with the SLL structure demonstrated an excellent recording property that could meet practical recording requirements. X-ray photoelectron spectroscopy was employed to confirm that the SLL structure could be preserved after many times of melting and quenching. Dynamic properties of the optical recording disk with the SLL structure were investigated with a 1 T pulse duration of 8 ns and a constant linear velocity of 19 m/s. A clear eye pattern was observed. The carrier-to-noise ratio was about 58 dB and a DTR of 47 Mbit/s was achieved. The DTR would be as high as 140 Mbit/s if the blue light is used. It has been proven that the SLL structure is a useful means to increase the DTR of phase change optical recording disks. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454222
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  • 93
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    Space-charge dynamics in photorefractive polymers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1727-1743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The model of space-charge formation in photorefractive polymers due to Schildkraut and Buettner has been modified to include thermally accessible deep traps as well as shallow traps. The dynamic equations have been solved semiempirically using independent measurements of photoconductive properties to predict photorefractive dynamics. Dependencies of the dynamics on charge generation, mobility, trap density, acceptor density, ionized acceptor density, as well as their associated rates are examined. The magnitude of the fast time constant of photorefractive development is successfully predicted. The introduction of deep traps into the model has allowed us to qualitatively predict the reduction in speed due to deep trap filling and ionized acceptor growth. Experimental studies of photoconductivity and photorefraction (PR) in several polyvinyl carbazole photorefractive composites are carried out to demonstrate the applicability of the model. By choosing chromophores with different ionization potentials and by varying the chromophore concentrations, we investigate the influence of the chromophore ionization potential on the photoelectric and PR properties and reveal the nature of deep traps in the composites and their contribution to both photoconductivity and PR dynamics. Effects of plasticizer components are also discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491279
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  • 94
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    Fully leaky guided wave determination of the original alignment direction for the directors at the walls in a twisted nematic liquid crystal cell (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1744-1751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fully leaky guided optical modes are used to explore the director profile in a twisted nematic liquid crystal cell built using a pair of high-index glass plates. This allows access to the pseudocritical angles corresponding to the liquid-crystal indices. Optical data is recorded over a range of angles of incidence with the cell subject to ac voltages. At higher-applied fields, the director in the cell center aligns almost homeotropically. Then the two surface regions become elastically decoupled, the directors at the surfaces realigning along the original alignment axes. Beyond the pseudo-critical angle corresponding to the low index of the liquid-crystal two minima of the polarization conserving transmission signal, for transverse electric polarization, TSS (over a particular range of incidence angles) are found as the cell rotation angle is changed. These two minima give the original alignment directions of the director, the easy axes, at the two substrates, information vital to the measurement of the torsional anchoring energies at the interfaces of the cells. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491025
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  • 95
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    Pretilted and grating alignment of liquid crystals by oblique ultraviolet irradiation of polyimide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1752-1756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the formation of pretilt by oblique irradiation of photosensitive polymers that homogeneously align liquid crystals in the direction corresponding to the maximum density of unreacted polymer. We show that a tilted polymer distribution is formed by oblique illumination with one beam of unpolarized or partially polarized light. When unpolarized radiation is used, a small azimuthal anisotropy is generated and the polymer tilt angle increases with incident angle. Pretilted liquid crystal alignment is possible up to a threshold angle at which the azimuthal alignment direction changes. Irradiation with partially polarized light gives a higher azimuthal anisotropy but smaller polymer tilt angles. We obtain liquid crystal pretilt angles up to 4° by oblique irradiation of polyimide with light from an excimer laser operating below the threshold for ablation. A simple two step process is used to obtain pretilted alignment for liquid crystals using surface gratings: a grating etched into polyimide by laser ablation is subsequently irradiated at oblique incidence to give planar liquid crystal alignment with a pretilt angle of 3°. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492863
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  • 96
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    Thomson-scattering observation of non-Maxwellian electron energy distribution in inductively coupled C4F8/Ar and CF4/Ar plasmas and the effect of vibrational excitation and nonlocal electron kinetics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1757-1763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser Thomson-scattering diagnostics of electron energy distribution function (EEDF) was carried out for inductively coupled cyclo–C4F8/Ar and CF4/Ar plasmas at 25 mTorr. Care was taken to ascertain that the observed Thomson spectra are unaffected by other laser-induced effects, in particular by Raman scattering. Admixing of C4F8 and CF4 with Ar resulted in marked deviation of EEDF from Maxwellian. The mechanism leading to non-Maxwellian EEDF was also studied by a Monte Carlo simulation. The results suggest that the major factors responsible are rapid electron energy loss due to vibrational excitation and the effect nonlocal electron kinetics associated with localized electron heating. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493659
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  • 97
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    Polarization switching and induced birefringence in InGaAsP multiple quantum wells at 1.5 μm (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4090-4094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the 1.5μm wavelength operation of a room temperature polarization switch based on electron spin dynamics in InGaAsP multiple quantum wells. An unexpected difference in response for left and right circularly polarized pump light in pump–probe measurements was discovered and determined to be caused by an excess carrier induced birefringence. Transient polarization rotation and ellipticity were measured as a function of time delay. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429794
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  • 98
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    Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4101-4104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz–Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F(approximate)Fbi−δF/2 when δF(very-much-less-than)Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1453492
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  • 99
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    Photoreflectance spectroscopy of wurtzite CdS (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1793-1798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) spectra have been measured to determine the lowest direct-band edge E0α (α=A, B, and C) of wurtzite CdS single crystal in the temperature range T=13–300 K for both E⊥c and E(parallel)c polarizations. The measured PR spectra can be interpreted by the three-dimensional (3D) excitonic plus one-electron line shapes over the entire temperature range. The temperature dependence of the excitonic and critical-point parameters (energy, amplitude, and broadening parameter) have been determined and analyzed using the Varshni [Physica (Amsterdam) 34, 149 (1967)] equation and an analytical four-parameter expression recently developed for the explanation of the band-gap shrinkage effect in semiconductors. The 3D- exciton binding energies have also been determined to be 27 (A), 31 (B), and 30 meV (C), respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493655
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  • 100
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    Arc erosion characteristics of pseudospark discharge in multiaperture geometry (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1788-1792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analysis of discharge mechanism in especially designed pseudosparks that facilitate pseudospark characteristic low-erosive conduction at very high currents is presented. The alternate formulation of criterion for transition to arc discharge phase developed here enables us to account for the emergence of arcs at each aperture after a threshold electric charge is transmitted in these devices. The use of a large number of apertures is found to have no influence on discharge condition that initiates arc formation at individual apertures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491022
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