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  • 2020-2022
  • 1995-1999  (666,058)
  • 1840-1849  (10,873)
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Year
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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters B 294 (1992), S. 466-478 
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters B 317 (1993), S. 474-484 
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Book
    Book
    Wien [u.a.] :Springer, ; 1.1977 - 16.2003; damit Ersch. eingest.
    Title: Computing : archives for informatics and numerical computation; Supplementum
    Publisher: Wien [u.a.] :Springer,
    Year of publication: 1977-2003
    Dates of Publication: 1.1977 - 16.2003; damit Ersch. eingest.
    Type of Medium: Book
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  • 4
    Online Resource
    Online Resource
    Berlin ; Heidelberg :Springer, ; 1.1995(1996) - 8.2002
    Title: Journal of molecular modeling
    Publisher: Berlin ; Heidelberg :Springer,
    Year of publication: 1996-2002
    Dates of Publication: 1.1995(1996) - 8.2002
    ISSN: 0949-183X
    Type of Medium: Online Resource
    Language: Undetermined
    Subsequent Title: Forts. ---〉:Journal of molecular modeling
    Note: Kumuliert jeweils den abgeschlossenen Jg. der Internetausg.
    Parallel Title: Druckausg. ---〉:Molecular modeling annual
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  • 5
    Journal/Serial
    Journal/Serial
    New York, NY :ACM, ; 1.1969 - 7.1975/76; N.S. 1.1976 - 21.2001,1; damit Ersch. eingest.
    Title: SIGBIO newsletter /
    Author: Association for Computing Machinery / Special Interest Group on Biomedical Computing
    Publisher: New York, NY :ACM,
    Year of publication: 1969-2001
    Dates of Publication: 1.1969 - 7.1975/76; N.S. 1.1976 - 21.2001,1; damit Ersch. eingest.
    ISSN: 0163-5697
    Type of Medium: Journal/Serial
    Language: Undetermined
    Parallel Title: Internetausg. ---〉:Biomedical computing
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  • 6
    Title: Intelligence : new visions of AI in practice ; quarterly publication of the ACM, the Association for Computing Machinery
    Contributer: Association for Computing Machinery
    Publisher: New York, NY :ACM,
    Year of publication: 1999-2001
    Dates of Publication: 10.1999 - 12.2001; damit Ersch. eingest.
    ISSN: 1523-8822
    Type of Medium: Journal/Serial
    Language: Undetermined
    Former Title: Vorg. ---〉:Association for Computing Machinery / Special Interest Group on Artificial Intelligence: SIGART bulletin
    Parallel Title: Internetausg. ---〉:Intelligence
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  • 7
    Journal/Serial
    Journal/Serial
    New York, NY :North-Holland, ; 1.1984 - 46.2000
    Title: ¬The¬ journal of logic programming
    Publisher: New York, NY :North-Holland,
    Year of publication: 1984-2000
    Dates of Publication: 1.1984 - 46.2000
    ISSN: 0743-1066
    Type of Medium: Journal/Serial
    Language: Undetermined
    Subsequent Title: Forts. ---〉:¬The¬ journal of logic and algebraic programming
    Parallel Title: Internetausg. ---〉:¬The¬ journal of logic and algebraic programming
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  • 8
    Journal/Serial
    Journal/Serial
    Los Alamitos, Calif. :Soc., ; 5.1997 - 8.2000; damit Ersch. eingest.
    Title: IEEE concurrency /
    Author: Institute of Electrical and Electronics Engineers / Computer Group
    Publisher: Los Alamitos, Calif. :Soc.,
    Year of publication: 1997-2000
    Dates of Publication: 5.1997 - 8.2000; damit Ersch. eingest.
    ISSN: 1092-3063
    Type of Medium: Journal/Serial
    Language: Undetermined
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4902-4907 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain boundary diffusion of titanium through platinum thin films has been carried out in the temperature range from 200 to 600 °C. Five different platinum/titanium bilayer thicknesses, from 35 to 800 Å Pt, were annealed in 5% O2/95% N2. The accumulation of titanium at the platinum surface layer was measured by x-ray photoelectron spectroscopy (XPS) to determine the grain boundary diffusion coefficient (Db). Diffusivity values were calculated based on two different analysis methods assuming type C kinetics. For Pt layers thicker than 200 Å, the activation energy (Qb) for titanium diffusion was found to be 118±15 kJ/mol (1.22±0.16 eV). For Pt layers thinner than 200 Å, there was a thickness dependence on the diffusion kinetics, resulting in activation energies as low as 20±4 kJ/mol (0.21±0.04 eV). XPS results gave no evidence for any Pt-Ti alloy formation in these layers. The suppression of alloy formation may be attributed to the presence of oxygen at the Pt/Ti interface during layer deposition. The quantitative analysis of titanium interdiffusion in platinum provides valuable information regarding Pt/Ti surface concentrations in thin-film chemical sensors, and for understanding changes in operational characteristics of platinum electrodes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4922-4929 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanical properties of sputtered AlCu(0.5 wt %) thin films, 0.2–2.0 μm thick, were determined by tensile testing. For comparison, tensile tests were also performed on bulk samples of the same composition. The films were deposited on thin polyimide foils. They were characterized with respect to the surface, microstructure, residual stress, and concentration of copper and oxygen. Stress-strain curves of the films were obtained by separating the force working on the polyimide foil from that working on the metal-polyimide compound. Young's modulus of the films almost corresponded to the bulk value. Films with a thickness 〉1.5 μm broke by formation of macrocracks while thinner films showed formation of microcracks. The Hall–Petch model, additional strengthening by small grain size, and the role of grain boundary sliding for crack formation are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4943-4948 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of C49-to-C54 conversion behavior on the agglomeration of Ti-silicide fabricated on subquarter micron polycrystalline Si lines by comparing pre-amorphized samples with conventional ones. Pre-amorphization of polycrystalline Si enhances the C49-to-C54 transformation on subquarter micron linewidths, however, it results in the early development of macroscopic grooves during the second rapid thermal annealing. From these results, we suggest the existence of an extra thermal budget during the second rapid thermal annealing of the pre-amorphized samples, which deteriorates the thermal stability of the C54-TiSi2 featured line. It is also shown that C49-to-C54 transformation on a 0.2 μm linewidth in the conventional samples has two kinds of competing factors when postannealing is added. One is the tendency of C54 transformation and the other is agglomeration of C49-TiSi2 grains. During high temperature annealing (〉850 °C), C49-TiSi2 has been agglomerated by a thinning mechanism instead of transformation into the C54 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5109-5115 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently published data on the variation with applied bias and temperature of steady-state photoluminescence and photoconductivity from a series of GaAs/AlGaAs single quantum well p-i-n structures are subjected to detailed theoretical analysis, using phenomenological variables introduced in connection with these results. The data are interpreted as revealing the presence in the well of a space charge, which causes band bending and hence indirectly modifies carrier escape lifetimes. It is shown that the thermionic escape of holes can affect the electron tunneling escape lifetime so that the latter displays a thermal activation energy which is quantitatively similar to the hole well depth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5116-5130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed experimental and theoretical analysis of the pulsed excitation of polymer light emitting diodes is presented. We find a set of universal transient features for a variety of device configurations (different polymers/cathodes) which can be reproduced using our phenomenological numerical model. We find that the temporal evolution of the electroluminescence in response to a step voltage pulse is characterized by: (i) a delay followed by; (ii) a fast initial rise at turn-on followed by; (iii) a slow rise (slower by at least one order of magnitude). The large mobility mismatch between holes and electrons in conjugated polymers allows us to separately time resolve the motion of holes and electrons. We suggest a method for extracting mobility values that takes into account the possible field-induced broadening of carrier fronts, and which is found to be compatible with mobilities determined from constant wave measurements. By using appropriate device configurations it is possible to determine the mobilities of both holes and electrons from a single device. Mobilities for holes and electrons are extracted for a poly(p-phenylenevinylene) copolymer and poly(di-octyl fluorene). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5141-5145 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced arrays of Co nanowires in anodic porous alumina filters by means of electrodeposition. The structure and magnetization behavior of the wires was investigated with nuclear magnetic resonance (NMR) and magnetization measurements. NMR shows that the wires consist of a mixture of fcc and hcp texture with the (0001) texture of the hcp fraction oriented preferentially perpendicular to the wires. The magnetization direction is determined by a competition of demagnetizing fields and dipole–dipole fields and can be tuned parallel or perpendicular to the wires by changing the length of the wires. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5164-5168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Fe doping on the magnetic, transport, and magnetoresistance properties are studied for La0.7Sr0.3Mn1−yFeyO3 (y=0–0.18) and La1−xSrxMn0.88Fe0.12O3 (x=0.1–0.50). For increasing y, a peak in the thermal dependence of the resistivity appears and develops at the temperature TPl lower than TC, while the another peak near TC becomes smaller and then disappears. At 78 K the La1−xSrxMn0.88Fe0.12O3 oxides are insulators for x〈0.2 and x〉0.5 and only the lower-temperature metal–insulator transition peak appears for 0.25〈x〈0.45. With increase of x from 0.25, TPl increases, becomes maximum at x=0.4 and then decreases. The temperature dependence of resistivity for the doped samples is quite different from that of the undoped La1−xSrxMnO3 series. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5293-5295 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Abnormal junction leakage characteristics in titanium-capped cobalt disilicide were investigated. The cobalt silicide n+-p junctions, fabricated with different capping layers, were characterized by current–voltage measurements and transmission electron microscopy. The reverse junction leakage currents of Ti-capped 13.5-nm-thick cobalt disilicide (CT) are higher than those of TiN-capped samples. The activation energy of CT at temperatures below 80 °C is 0.41 eV, and its dominant leakage mechanism is consistent with phonon-assisted tunneling. Transmission electron microscopy analysis indicates the existence of island phases and precipitates located at the silicide/Si interface, which are titanium disilicide and CoxTi1−xSi2 phases, as evidenced by energy dispersive spectroscopy. As a result, for the case of CT, the reasons for higher junction leakage currents and their field dependence appear to be the result of the diffusion of Ti atoms into CoSi2 grain boundaries and the resulting formation of TiSi2 and CoxTi1−xSi2 phases, which gives rise to a rougher silicide interface and a close spacing between silicide and the junction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4100-4106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A swept frequency absorbance plasma diagnostic technique for measurement of self-resonance frequency, intrinsic plasma-tool distributed capacitance, radiative energy loss, and effective plasma capacitance is described. The ex situ probe measures the plasma properties independently of all contributions from the plasma-tool and transmission line connection to the rf supply. The technique employs a swept frequency source and a balanced equal ratio arm bridge to measure the frequency response of the plasma tool after the plasma has been extinguished under plasma conjugate matching conditions. The resonant frequency of the combination of capacitances due to plasma-tool geometry (intrinsic capacitance, Ci) and the matching network (Cm) exhibits a shift from the excitation frequency (13.56 MHz) that is dependent on the effective plasma capacitance. Resonance frequency shift data are given for He, Ne, Ar, O2, N2, and N2O as a function of both pressure (0.02–0.8 mbar) and incident power (50 and 100 W). This technique allows the differentiation between dissociation and ionization processes within the plasma through a simple noninvasive rf measurement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4118-4123 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The charge distribution function (CDF) of dust particles in low temperature plasmas is obtained as a function of both negative and positive discrete charges Z=(minus-plus)1,(minus-plus)2;,..., and various plasma parameters. Positively charged grains can be formed when secondary electron emission, that is, ionization of the grains by electron impact, is sufficiently important to change their charge. An expression for the CDF is derived from steady-state master equations for the densities of monodispersed, negatively or positively charged dust particles, with Z=(minus-plus)1,(minus-plus)2,... discrete elementary charges and radius R, taking into account single and double elementary charge changes in collisions of the particle with plasma electrons or ions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4124-4133 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional model has been developed for calculating the behavior of Ar2+ and Ar2+ ions in a direct current argon glow discharge, by the use of balance equations describing the various production and loss processes for these species, as well as their transport by diffusion and migration. These balance equations are coupled to the equations for the Ar+ ions and electrons and solved simultaneously with Poisson's equation, to obtain a self-consistent description of the charged particles behavior and the electrical characteristics in the glow discharge. Moreover, this model is combined with the other models that we have developed previously for the Ar atoms in various excited levels and the Cu atomic and ionic species, to obtain an overall description of the direct current argon glow discharge. The model is applied to typical conditions used for glow discharge mass spectrometry (pressure of 50–100 Pa, voltage of 600–1400 V, and current of 0.4–15 mA). Typical calculation results include the densities and fluxes of these ionic species, as well as the relative contributions of their production and loss processes. The Ar2+ ions are almost exclusively formed by two-electron ionization from Ar0 atoms, and they become primarily lost by diffusion and subsequent recombination at the cell walls. The Ar2+ ions are mainly created by Hornbeck–Molnar and metastable-metastable associative ionization, whereas atom to molecule conversion seems to play only a minor role at the discharge conditions under study. Loss of these Ar2+ ions is caused primarily by diffusion and recombination at the cell walls, but dissociative recombination in the plasma plays also a significant role. We found that the ratios of Ar2+/Ar+ and Ar2+/Ar+ ion densities and fluxes were in the order of 1%–10%, which is in good agreement with experimental observations. © 1999 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4192-4198 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, we study the sensitivity of the near-edge x-ray absorption fine structure (NEXAFS) spectroscopy to ion induced defects in polycrystalline diamond films. The ion bombardment of hydrogenated films is performed using 30 keV Xe+ ions at room temperature for doses ranging from 2×1013 ions/cm2, producing local point defects, to 2×1015 ions/cm2, which results in almost complete amorphization of the diamond surface. Auger electron spectroscopy measurements are not sensitive to the modifications induced by the lowest implantation dose. Whereas partial electron yield (PEY) NEXAFS measurements, applied in surface and bulk-sensitive modes, using 35, 15, and 8 eV secondary electrons, respectively, reveals the formation of a defective structure and gradual deterioration of diamond in the near-surface region. From PEY NEXAFS spectra measured using 15 eV secondary electrons, the position of C(1s) binding energy is measured. The x-ray photoelectron spectra of the samples were measured using an incident photon energy of 450 eV. It is found that the C(1s) binding energy in the implanted samples has a positive shift of 0.6–1 eV, which is indicative of transformation of diamond to disordered carbon. The high sensitivity of NEXAFS spectroscopy to point defects induced by the low dose ion implantation was reflected by a sharp reduction in the intensity of the diamond core exciton peak and by the appearance of a new spectral feature in the pre-edge region, below the C(1s)−π* transition. Analysis of the NEXAFS spectra of ion implanted films is performed on the basis of the electronic structure of diamond. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 21
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4199-4213 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the high-electric-field technique designed by Yokoyama and van Sprang [J. Appl. Phys. 57, 4520 (1985)] to determine the polar anchoring coefficient W of a nematic liquid crystal-solid substrate. The technique implies simultaneous measurement of the optical phase retardation and capacitance as functions of the applied voltage well above the threshold of the Frederiks transition. We develop a generalized model that allows for the determination of W for tilted director orientation. Furthermore, the model results in a new high-field technique, (referred to as the RV technique), based on the measurement of retardation versus applied voltage. W is determined from a simple linear fit over a well-specified voltage window. No capacitance measurements are needed to determine W when the dielectric constants of the liquid crystal are known. We analyze the validity of the Yokoyama–van Sprang (YvS) and RV techniques and show that experimental data in real cells often do not follow the theoretical curves. The reason is that the director distribution is inhomogeneous in the plane of the bounding plates, while the theory assumes that the director is not distorted in this plane. This discrepancy can greatly modify the fitted value of 1/W, and even change its sign, thus making the determination of W meaningless. We suggest a protocol that allows one to check if the cell can be used to measure W by the YvS or RV techniques. The protocol establishes new criteria that were absent in the original YvS procedure. The results are compared with other data on W, obtained by a threshold-field technique for the same nematic-substrate pair. © 1999 American Institute of Physics.
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  • 22
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4214-4219 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcavities formed by H+ and He+ implantation and subsequent annealing are effective gettering sites for transition metal impurities in silicon. However, gettering in silicon-on-insulator (SOI) materials is quite different from that in silicon. In this work, we investigate the gettering of Cu to these microcavities in silicon, separation by implantation of oxygen (SIMOX) and bonded/ion-cut SOI wafers. Our data indicate that He+ implantation in the high dose regime (0.2–1×1017 cm−2) creates a wide band of microcavities near the projected range without causing blistering on the sample surface. On the other hand, the implantation dose of H+ needed for stable microcavity formation is relatively narrow (3–4×1016 cm−2), and this value is related to the projected range. The different behavior of H and He in silicon is discussed and He implantation is more desirable with regard to impurity gettering. Cu is implanted into the surface region of the Si and SOI samples, followed by annealing at 700 and 1000 °C. Our results indicate that the microcavities can effectively getter a high dose of Cu (2.5×1015 cm−2) at 700 °C in bulk Si wafer, but higher temperature annealing is needed for the effective gettering in SIMOX. Gettering of Cu by the intrinsic defects at or beneath the buried oxide interface of the SIMOX is observed at 700 °C, but no trapped impurities are observed after 1000 °C annealing in the samples in the presence of microcavities. Almost all of the 1×1014 cm−2 Cu implanted into the Si overlayer of the bonded/ion-cut SOI diffuse through the thermally grown oxide layer and are captured by the cavities in the substrate after annealing at 1000 °C. © 1999 American Institute of Physics.
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  • 23
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4232-4241 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Closing cracks in viscoelastic materials are analyzed using a cohesive zone model. The analysis is relevant to the bonding of surfaces of viscoelastic materials, and in particular to the Johnson–Kendall–Roberts (JKR) experiment. A crack bonding theory due to Schapery is extended to include the case of the standard linear solid material, and some consequences of this material's finite long time compliance are illustrated. The stress field behind a steadily closing crack in a standard linear solid is also investigated in detail. Finally, a method for applying Schapery's crack bonding theory to the analysis of a JKR-type experiment involving viscoelastic cylinders is given explicitly. © 1999 American Institute of Physics.
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  • 24
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4225-4231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Early hydration (up to four weeks) of five ordinary Portland cement pastes with different water-to-cement ratios (0.3, 0.4, 0.5, 0.6, and 1.0 wt) was investigated through positron annihilation lifetime spectroscopy. Measurements were performed at four different hydration times (1 day and 1, 2, and 4 weeks) and compared with results obtained from thermogravimetric analyses. Deconvolution of positron spectra allowed us to separate orthopositronium annihilations in the evacuated gel pores from those in the pores containing water, and therefore, to monitor the pores' evolution with aging time. It is found that the concentration of gel pores increases with aging time, as well as by increasing the content of water in the paste; on the other hand, the typical sizes of the pores do not show significant variations, either with aging time or with the water-to-cement ratio.© 1999 American Institute of Physics.
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  • 25
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4734-4739 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized intersubband lasers based on optically pumped type-II antimonide quantum wells in a magnetic field are proposed. Complete discretization of the electron energy spectrum is predicted to extend the electron lifetime considerably. Continuous-wave room-temperature operation is projected for both interband and intersubband pumping configurations lasing at λ=16–24 μm. Furthermore, the parasitic capacitances associated with electrical injection are eliminated, and the large differential gain and fast intrinsic time scale should give modulation bandwidths in excess of 100 GHz. © 1999 American Institute of Physics.
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  • 26
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4772-4779 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article deals with ion behavior in small open-ended magnetic devices, the electron cyclotron resonance ion sources (ECRIS) that were developed for multicharged ion production. The ECRIS are basically ECR-heated plasma confinement machines with hot electrons and cold ions. The main parameters of the ion population in ECRIS plasmas are successively analyzed: temperature, collisions, losses, confinement times, followed by the gas mixing effect, a specific technique to improve the performance as an ion source. A series of experiments is described for the systematic analysis of this effect. It is experimentally shown that high charge state optimization by gas mixing results from an ion confinement time improvement due to ion cooling, and relies on a compromise between three criteria, ion losses, mass effect, and ionization rates. © 1999 American Institute of Physics.
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  • 27
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4786-4791 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An axial profile of the quasineutral plasma jet exhaust from a Hall thruster is studied. The plasma jet expansion is modeled using the sourceless steady-state hydrodynamic equations. It is considered that the plasma jet has a conical shape with a half angle of about 40°. The magnetic field surrounding the Hall thruster exit is included in the calculation. It is found that a magnetic field may significantly affect the axial profile of the plasma potential. For instance, in the case of zero magnetic field, the plasma potential is about −10 V at 1 m from the thruster exit, while in the case of a 0.1 T magnetic field, the plasma has a potential of about +25 V. Results predicted by the model are found to be in good agreement with experimental data for three different Hall thruster designs. © 1999 American Institute of Physics.
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  • 28
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4322-4325 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics changes in the growth of GaN induced by the presence of In segregated on the surface have been investigated in situ by using reflection high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely, Ga-polar (0001) wurtzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics, leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth. © 1999 American Institute of Physics.
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  • 29
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4316-4321 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide (SiO2)/silicon carbide (SiC) structures annealed in nitric oxide (NO) and argon gas ambiences were investigated using x-ray photoelectron spectroscopy (XPS). The XPS depth profile analysis shows a nitrogen pileup of 1.6 at. % close to the NO annealed SiO2/SiC interface. The results of Si 2p, C 1s, O 1s, and N 1s core-level spectra are presented in detail to demonstrate significant differences between NO and Ar annealed samples. A SiO2/SiC interface with complex intermediate oxide/carbon states is found in the case of the Ar annealed sample, while the NO annealed SiO2/SiC interface is free of these compounds. The Si 2p spectrum of the Ar annealed sample is much broader than that of the NO annealed sample and can be fitted with three peaks compared with the two peaks in the NO annealed sample, indicating a more complex interface in the Ar annealed sample. Also the O 1s spectrum of the NO annealed samples is narrow and symmetrical and can be fitted with only one peak whereas that of the Ar annealed sample is broad and asymmetrical and is fitted with two peaks. It is evident that the Ar annealed sample contains some structural defects at the interface, which have been removed from the interface by NO annealing as shown by O 1s spectra. The C 1s spectra at the interface reveal the subtle difference between NO and Ar annealed samples. An additional peak representing the interface oxide/carbon species is observed in the Ar annealed sample. At the interface, the N 1s spectrum is symmetrical and can be fitted with one peak, representing the strong Si(Triple Bond)N bond. However, the N 1s and C 1s XPS spectra acquired in the bulk of the dielectric showed not only the Si(Triple Bond)N bond but also a trace amount of the N–C bond. © 1999 American Institute of Physics.
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  • 30
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4333-4340 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet carrier concentration (Ns) of channel layers in modulation-doped InAlAs/InGaAs heterostructure field-effect transistor (HFET) structures with n+InGaAs contact layers has been successfully and nondestructively determined using the room-temperature photoluminescence (PL) method. It is found that the spectral energy width between the maximum position of the main PL peak around 0.8 eV and the half-maximum position on the higher energy side has a good positive linear correlation with the Ns of the channel measured by the van der Pauw method. The scattering of the data is less than ±3×1011 cm−2. The determination of Ns is effective even if the HFET structures have not only n+InGaAs contact layers but also layers for InAlAs Schottky level-shift diodes. From a comparison with low-temperature PL spectra, the main PL peak is attributed to the e2h transition in the quantum well of the channel. It is considered that the slope of the peak stretches further to the high energy as the Fermi energy in the channel become higher, i.e., as the Ns becomes larger. © 1999 American Institute of Physics.
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  • 31
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4348-4353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Zeeman effect measurements in near-infrared luminescence bands in Cr-doped 4H and 6H SiC are presented. The PL spectrum consists of two no-phonon lines (NPLs) at 1.1583 and 1.1898 eV in 4H SiC and three NPLs at 1.1556, 1.1797, and 1.1886 eV in 6H SiC. The observed Zeeman splittings and temperature dependence studies reveal the spin triplet of the ground state and the orbital doublet structure of the excited state of the Cr-related center. All the triplets have almost isotropic g values close to 2 with trigonal symmetry and small zero-field splitting values D. In contrast, the effective g values of the excited state of the center are very anisotropic with g(parallel) in the range of 0.22–0.64 and g⊥=0 for different NPLs in both polytypes. Based on the Zeeman results, the PL is attributed to the internal transition 1E(D)→3A2(F) within the d shell of a substitutional, neutral chromium (Cr4+) in the 3d2 electronic configuration. © 1999 American Institute of Physics.
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  • 32
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4341-4347 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a series of synchrotron characterizations of two epitaxial GaAs detectors of active areas 2.22 mm2 and thicknesses 40 and 400 μm. In spite of an order of magnitude difference in depletion depths, the detectors were found to have comparable performances at ∼−40 °C, with energy resolutions of ∼1 keV full width at half maximum (FWHM) at 7 keV rising to ∼2 keV FWHM at 200 keV and noise floors in the range of 1–1.5 keV. At the lower energies, the energy resolution was dominated by leakage current and electromagnetic pickup. At the highest energies, however, the measured resolutions appear to approach the expected Fano limit; e.g., ∼950 eV at 200 keV. Both detectors were remarkably linear, with average rms nonlinearities of 0.2% over the energy range of 10–60 keV. By raster scanning the active areas with 20×20 μm2 monoenergetic photon beams, it was found that the nonuniformity in the spatial response of both detectors was less than 1% and independent of energy. The material used to fabricate the detector is extremely pure. For example, low temperature photoluminescence measurements indicate that the density of the As antisite defect (EL2) is of the order of 1012 cm−3, which is ∼2–3 orders of magnitude lower than that generally reported. This indirect measurement of material purity is confirmed by Monte Carlo simulations of the detector x-ray response, which show that in order to reproduce the observed energy-loss spectra, electron and hole trapping cross-section/density products must be (very-much-less-than)1 cm−1. © 1999 American Institute of Physics.
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  • 33
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4354-4359 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 (CIS) films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films. © 1999 American Institute of Physics.
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  • 34
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4360-4364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electro-optical properties of (Zn,Cd)Se/Zn(S,Se) quantum well structures grown on GaAs substrates have been studied with differential electroabsorption spectroscopy at room temperature and compared to model calculations. (Zn,Cd)Se wells of 20, 10, and 4×5 nm are investigated, corresponding to well widths of four, two, and one times the exciton Bohr radius in this material system, respectively. We observe the quantum confined Stark effect for the 4×5 nm sample and find a Stark shift of 18 meV in the heavy-hole exciton peak for an electric field change from 82 to 175 kV/cm. In contrast, the 10 nm sample shows a rather weak and more Franz–Keldysh-like signal. We show that the 20-nm-thick quantum-well sample behaves like bulk material, i.e., the electro-absorption signal is well described by Franz–Keldysh oscillations. © 1999 American Institute of Physics.
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  • 35
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4365-4368 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The noncollinear interaction between guided optical waves and magnetostatic waves under inclined bias magnetic field is studied in detail. The diffraction efficiency (DE) and the mode-conversion efficiency (MCE) of guided optical waves with magnetostatic forward volume waves in the bismuth-doped yttrium–iron–garnet (Bi-doped YIG) waveguide are calculated numerically. The calculation results indicate that the DE and the MCE are different in physical conception and the DE is not equal to the MCE in magnitude under inclined bias magnetic field. The DE may be greatly increased by using an appropriately inclined bias magnetic field, which has been experimentally confirmed in a pure YIG waveguide. By using an inclined bias magnetic field and the Bi-doped YIG waveguide, under the phase-matching conditions, the maximum DE can come up to 79.5% or more. © 1999 American Institute of Physics.
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  • 36
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4387-4389 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained. © 1999 American Institute of Physics.
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  • 37
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5157-5163 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hysteresis loops in SmCo5−xCux as-cast and annealed magnets (1〈x≤3) were measured at room temperature using a pulsed-field magnetometer and a static vibrating sample magnetometer. At field sweeps between 2 and 17 (GA/m)/s a giant—in this field range nearly constant—magnetic viscosity Sv was obtained. The viscosity is approximately proportional to the Cu concentration and to the coercive field. A heat treatment at 1273 K for three weeks changes the microstructure and enhances strongly the intensity and the time dependence of the coercivity. The decay of the inverse of the coercive field Hc with time follows a simple ln(t) relation between 10−5 and 10 s. Data analysis allows a density of stacking faults N to be extracted for each sample. Sv (and Hc) increases with N which increases with x. © 1999 American Institute of Physics.
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  • 38
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5169-5174 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the unidirectional exchange anisotropy between a ferromagnetic (FM) Ni81Fe19 film and a disordered antiferromagnetic (AF) CrMnPtx (x=3, 6, or 9) film. The angular dependence of the exchange coupling in these FM/AF bilayers has been measured. We show that the complex angular dependence of this exchange coupling can be understood by a simple Stoner–Wohlfarth model involving only a uniaxial anisotropy and a unidirectional exchange coupling. Numerical results are in excellent agreement with the experimental data. © 1999 American Institute of Physics.
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  • 39
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5203-5206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
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  • 40
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5215-5231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed dynamical analysis of an all solid-state THz source is given. This is based on the polarization-induced autonomous oscillation in resonant tunneling heterostructure with staggered band-gap alignment. The physical model consists of the following processes: (a) Generation by Zener tunneling of holes trapped in the barrier and electrons drifting in the depletion layer of the drain, whose rate decreases with the polarization between the barrier and quantum well. (b) Stimulated generation of barrier-well polarization. (c) Nonradiative decay of barrier-well polarization through barrier-hole recombination and quantum-well electron discharge. It is shown that a limit cycle oscillation of the barrier-well polarization and trapped-hole charge in the barrier can occur which induce THz oscillations in the resonant tunneling current across the device. The time-averaged results agree with the measured current–voltage characteristic of AlGaSb/InAs/AlGaSb staggered band-gap double-barrier structure. In particular, the measured smaller current offset at forward bias compared to that of reverse bias in the current–voltage hysteresis loop is predicted by our physical model and limit cycle analysis. Thus, we have experimental evidence indicating the correctness of our approach and the promising potential of this device as a novel all solid-state THz source. © 1999 American Institute of Physics.
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  • 41
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5245-5248 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we show that in the atomic force microscopy experiments performed on a metallic surface, there is always a long range electrostatic force in addition to the van der Waals forces. This capacitive force is due to the contact potential between the tip and the surface and exists even without external applied potential. We have calculated this capacitive force for a real geometry of the tip–sample system and compared it to the van der Waals force calculated for the same geometry. We conclude that the electrostatic force is always dominant for a tip–surface distance larger than half of the tip radius of curvature. © 1999 American Institute of Physics.
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  • 42
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5256-5262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling in the low-keV energy range is demonstrated by means of the technique of time-of-flight scattering and recoiling spectrometry. The predictions of the Lindhard string model of ion channeling are compared with the experimental findings. Qualitative agreement was obtained between the experimentally measured critical angles and the predictions of the model. The technique of low-energy ion channeling is shown to be capable of quantitatively probing the positions of light elements on heavy substrates with analysis by simple geometrical constructs. Classical ion trajectory simulations using the scattering and recoiling imaging code were used to observe the details of the ion trajectories. Quantitative analysis of the Pt(111)-(1×1)-H surface using 5 keV Ne+ shows that the hydrogen atoms preferentially populate the threefold fcc sites with a height of 0.9±0.1 Å above the first-layer Pt atoms and a corresponding Pt–H bond length of 1.9±0.1 Å. © 1999 American Institute of Physics.
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  • 43
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5270-5273 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient centers were observed. When it was thermally annealed at temperatures higher than 800 °C, the Ge distribution became uniform. The concentration of oxygen deficient centers was found to decrease with the thermal annealing in an O2 atmosphere, while it increased with the thermal annealing at 1000 °C in N2. This suggests that improvement of the film quality can be achieved by thermal annealing. On the other hand, neither inhomogeneity of Ge distribution nor the appearance of oxygen deficient centers was observed in the film prepared by the latter method, and its film quality was scarcely affected by the thermal annealing. © 1999 American Institute of Physics.
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  • 44
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5279-5285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synthesis of ultrafine nanosize powders by ion beam evaporation (IBE) has been studied numerically and experimentally. Theoretical models have been developed, which involve such physical processes as beam-target interaction, plasma expansion, and the synthesis of powders. The macroscopic properties of the ultrafine powders have been predicted. As an application of our models, the macroscopic properties of AlN powders synthesized by IBE with an AlN target have been predicted. The energy density, pulse width, and spot size of the ion beam are 20 J/cm2, 70 ns, and 1 cm2, respectively. The main results have shown that the particle size distribution is log normal and that 70% of all particles exist between 20 and 40 nm. The average diameter and the specific surface area are ∼30 nm and ∼50 m2/g, respectively. Experimentally, the ultrafine AlN powders have been successfully synthesized by IBE, which has been verified by x-ray diffraction and transmission electron diffraction. Furthermore, particle size distributions have been obtained by transmission electron microscopy. The experimental results are found to be in a reasonable agreement with the numerical studies. © 1999 American Institute of Physics.
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  • 45
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4711-4712 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This response recalls the bases of the Monte Carlo methods of gas flow simulations. Basic points and explicit parameters used in both the DSMC method and the method of random trajectories are underlined. Some clarifications are made on the confusion made by the author of the comment on this subject. The justification of the validity of the method is recalled, as already made in the original article. © 1999 American Institute of Physics.
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  • 46
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3512-3515 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A solid state broad band amplifier of terahertz radiation (1.5–4 THz), based on intersubband transitions of hot holes in p-Ge is demonstrated. The gain is investigated as a function of applied magnetic and electric fields by transmission measurements using a laser system with two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usually reported for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Distinct differences in gain dependence on applied fields are noted between low- and high-frequency modes of p-Ge laser operation. © 1999 American Institute of Physics.
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  • 47
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3525-3529 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of low-energy ((approximate)15 keV) electron beams for pumping laser systems in dense gases with high specific power deposition is described. Thin (300 nm) SiNx ceramic foils used as entrance window in a transverse geometry for the electron beam allows pressure differentials of several atmospheres with low percentage energy loss in transmission. The 1.73 μm XeI (5d[3/2]1–6p[5/2]2) infrared laser was used for a first demonstration of this concept. The laser operated between 130 and 650 mbar. A threshold pumping power of 5.3 W and a maximum output power of 6 mW were observed. The system can be scaled to high pumping power ((approximate)MW/cm3) and short wavelength. © 1999 American Institute of Physics.
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  • 48
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3543-3549 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth processes of particles in a cluster-size range below a few nm in size in low pressure and low power SiH4 rf discharges are studied using the new method, in which the threshold photoemission method is coupled with the microwave interferometry, for measurements of their size and density. The density of particles is above 1010 cm−3 and much exceeds that of positive ions, the result of which shows that most of them are neutral. The particles grow mainly around the plasma/sheath boundary near the powered electrode and their size growth rate is 3.4–4.4 nm/s, being much higher than a film growth rate of 0.064–0.12 nm/s. These features strongly indicate that their growth is due to deposition of polymerized species, originated from short lifetime SiH2 radicals, on them, while coagulation between particles becomes appreciable after a time when their density reaches about 1011 cm−3. Moreover, the pulse modulation of rf discharge is found to be effective in reducing the density of cluster-size particles. The reduction can be explained by a model taking account of diffusion of the polymerized species through the radical production region, where the particles nucleate and grow. © 1999 American Institute of Physics.
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  • 49
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum (Mo) doped vanadium dioxide thin films were synthesized using a Mo striped vanadium (V) target during pulsed laser ablation process. The film structure was characterized by high resolution x-ray diffraction, x-ray rocking curve and Rutherford backscattering/channeling measurements. The results show that the full width at half magnitude of the x-ray rocking curve is as narrow as 0.0074°, comparable to that of the (0001) sapphire substrate, 0.0042°, in this study. The ratio of the aligned-to-random backscattered yield reaches 5%, implying that the growth is that of the single crystalline epitaxy. The result of angular scans for both V and Mo atomic channelings reveals that Mo atoms successfully take sites of the V sublattice as a substitutional dopant. It has been noted that the degradation of the phase transition properties of the film upon doping is closely related to the conductivity in the semiconductor phase. © 1999 American Institute of Physics.
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  • 50
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4091-4095 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have modeled the switching behavior of a twisted nematic cell using the one-dimensional Ericksen–Leslie equations of nematodynamics. We compare the modeling results with experimental data on transmission versus time. Excellent agreement between experiment and model is achieved at all voltages and viewing angles. To achieve this agreement, only two viscosity parameters are required; these are combinations of the Leslie viscosity coefficients, namely, α3−α2 (the rotational viscosity) and α4+α5. A fast and stable adaptive numerical algorithm, based on an effective viscosity parameter, is developed for solving the equations of motion. The viscosity parameters obtained from fitting the flow experiments are in good agreement with those obtained from dynamic light-scattering measurements. © 1999 American Institute of Physics.
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  • 51
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4076-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical stacking of organic light emitting devices (OLEDs) that emit the three primary colors is shown to be a means for achieving efficient and bright full-color displays. In Paper I, we addressed stacked OLED (SOLED) design and fabrication principles to optimize emission colors, operating voltage, and efficiency. Here, we present results on two different (metal-containing and metal-free cathode) SOLED structures that exhibit performance suitable for many full-color display applications. The operating voltages at 10 mA/cm2 (corresponding to video display brightnesses) are 6.8, 8.5, and 12.1 V for the red (R), green (G), and blue (B) elements of the metal-containing SOLED, respectively. The respective subpixel luminous efficiencies are 0.53, 1.44, and 1.52 cd/A, and the Commission Internationale de L'Éclairage (CIE) chromaticity coordinates are (0.72, 0.28), (0.42, 0.56), and (0.20, 0.22). In the high transparency metal-free SOLED, an insulating layer was inserted between the two upper subpixels to allow for independent grounding of all color emitters in the stack. At operating voltages of 12–14 V, video display brightnesses were achieved with luminous efficiencies of 0.35, 1.36, and 1.05 cd/A for the R, G, and B subpixels, respectively. The respective CIE coordinates for R, G, and B emissions are (0.72, 0.28), (0.26, 0.63), and (0.17, 0.28) in the normal viewing direction, shifting inperceptibly as the viewing angle is increased to as large as 60°. Finally, we discuss addressing schemes of SOLED displays, and compare them with other strategies for achieving full-color, OLED-based displays. © 1999 American Institute of Physics.
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  • 52
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4096-4099 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization state of a vertical cavity surface emitting laser (VCSEL) output was driven by means of optical injection from another VCSEL. The bistability inherent to polarization locking allowed us to generate a memory effect. The control parameter was the modulated bias current of the maser laser and effects were shown to exist at frequencies up to 1 GHz. © 1999 American Institute of Physics.
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  • 53
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4107-4117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed study of the recently discovered modulation at frequencies of hundreds of MHz of an electron beam produced by a plasma cathode. The plasma cathode consists of a ferroelectric disk sample [BaTiO3 or Pb(Zr, Ti)O3] that is placed in a cylindrical metal box having an output window covered by a grid. The plasma is prepared by an incomplete discharge that was ignited by a few kV driving pulse applied across the ferroelectric disk. It was shown that the current modulation appears only when the driving pulse is applied to the front gridded electrode of the ferroelectric sample and the solid rear electrode is grounded. The modulation spectrum is quite narrow (≤3%), with harmonics at frequencies up to a few GHz. The basic frequency of modulation was found to be dependent on the length of the feed cable to the sample. Investigation of the plasma and the beam modulation properties and their dependence on the experimental parameters is presented. The results indicate the formation of a plasma at the vicinity of the front electrode of the ferroelectric sample during the modulation. The results are discussed within the frame of electrons oscillating in the potential well created by the positively charged plasma having feedback coupling with the input cable. © 1999 American Institute of Physics.
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  • 54
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4861-4864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Migration of vacancies in crystalline, n-type silicon at room temperature from Ge+-implanted (150 keV, 5×109–1×1011 cm−2) surface layers was studied by tracing the presence of P–V pairs (E centers) in the underlying layer using deep level transient spectroscopy (DLTS). Under the conditions we have examined, the vacancies migrate to a maximum depth of about 1 μm and at least one vacancy per implanted Ge ion migrates into the silicon crystal. The annealing of the E centers is accompanied, in an almost one-to-one fashion, by the appearance of a new DLTS line corresponding to a level at EC−Et(approximate)0.15 eV that has donor character. It is argued that the center associated with this line is most probably the P2–V complex; it anneals at about 550 K. A lower limit of the RT-diffusion coefficient of the doubly charged, negative vacancy is estimated to be 4×10−11 cm2/s. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3751-3757 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different types of structure called X1 and X2 are existing in Y2SiO5 at normal conditions. In X1 type, Y3+ ions occupy two sites where they are surrounded respectively by nine and seven oxygen ions, while in X2 structure, only six and seven oxygen ions are involved. Nanometric scale X1-Y2SiO5 crystals were prepared by sol-gel method with particle size around 50 nm. Site selective excitation at low temperature has shown four different luminescent centers. Two of them belong to Eu3+ embedded in X1-Y2SiO5, the other two are attributed to Y2O3:Eu phase and to a particular site on the surface. The occurrence of the latter site may be related to the nanometric size of the sample. A pronounced excitation energy transfer from site 2 to site 1 was also observed on excitation spectra. The energy transfer rate increases rapidly with increasing Eu3+ concentration and for x=0.7 in Y2−xSiO5:Eux, no fluorescence takes place in site 2 at 15 K. The lifetimes of the 5D0 levels of Eu3+ in the two sites were measured as a function of Eu3+ concentration. The results have shown that the lifetime of the 5D0 level of Eu3+ in site 2 decreases with increasing Eu3+ concentration. The energy transfer rate dependence upon temperature was studied in detail and compared to a theoretical simulation. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3787-3791 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of quantized jumps due to single-carrier trapping and detrapping at defect states in silicon photoconductors of 103 μm3 in volume. A specifically designed electrical test structure in a low-doped (2×1014 cm−3) silicon crystal was fabricated. It consists in four substrate resistances connected in a Wheatstone bridge. After the exposure to light, the bridge offset voltage recovers its equilibrium value with steps of 5–10 μV, corresponding to the emission or capture of a single carrier. Such structures also display random telegraph signals in the dark, with steps of similar amplitude. This behavior is observed with structures processed on Czochralski-grown substrates and not with those processed on float-zone substrates. Simple calculations based on quantized free carrier concentration variations corroborate the above measurements. © 1999 American Institute of Physics.
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  • 57
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3822-3825 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroabsorption has been investigated in semi-insulating asymmetric GaAs/AlGaAs double quantum wells presenting high linear Stark responses, adequate for photorefractive applications. We have used the envelope function approximation to calculate the linear Stark shifts of the energy levels and select a suitable structure for the experimental study. The experimental data indicate that the response to the applied field critically depends on a complicated interplay of effects that compete or cooperate to suppress or enhance the electroabsorption. For positive field polarity, the competing contributions of the overlapping e1–hh1 and e1–hh2 transitions partially cancel the electroabsorption despite large linear Stark shifts. On the other hand, small negative fields induce large electroabsorption because the Stark shifts of the two transitions have opposite signs. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3833-3843 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent, two-dimensional, time-dependent, drift-diffusion model is developed to simulate the response of high power photoconductive switches. Effects of spatial inhomogeneities associated with the contact barrier potential are incorporated and shown to foster filamentation. Results of the dark current match the available experiment data. Persistent photoconductivity is shown to arise at a high bias even under the conditions of spatial uniformity. Filamentary currents require an inherent spatial inhomogeneity, and are more likely to occur for low optical excitation. Under strong uniform illumination, the spatial nonuniformities were quenched as a result of a polarization-induced collapse in the internal fields. However, strong electric fields resulting at the contacts create a bipolar plasma, and hence, a virtual "double injection." © 1999 American Institute of Physics.
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  • 59
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4477-4482 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the effect of an electric field applied along the direction of carrier confinement on the exciton linewidth due to the scattering of excitons by ionized impurities in semiconducting quantum well structures. The contributions to the linewidth due to the elastic and inelastic scattering of the excitons by the ionized impurities have both been taken into account. Both these contributions to the linewidth are found to increase with the applied electric field except for the narrowest wells. However, the linewidth is found to initially decrease with increasing well width for all electric fields and then increase again with increasing well widths for finite electric field for the case where the exciton is scattered elastically. The minimum in the linewidth as a function of well width shifts to smaller well widths with increasing electric field. In the absence of an electric field, the linewidth continues to decrease with increasing well width. When the exciton is ionized as a result of the scattering, the linewidth increases with well width for all nonzero electric fields. However, in the absence of the electric field, the linewidth decreases with increasing well width. This reflects the effect of decreasing confinement on the scattering by ionized impurities. In the case of elastic scattering of the exciton by the ionized impurities, the linewidth has a maximum as a function of the exciton energy with the maximum shifting to lower energies as the well width decreases. For scattering which results in the ionization of the exciton, there is a threshold in the linewidth as a function of the exciton's center of mass energy with the threshold being larger for smaller well widths. The contribution to the linewidth due to elastic scattering of the exciton is many orders of magnitude larger than that due to scattering in which the exciton is ionized. © 1999 American Institute of Physics.
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  • 60
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4498-4508 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced surface deformation and surface relief grating formation at different intensity levels on azobenzene-functionalized polymer films were investigated. The surface deformation profile induced by a Gaussian laser beam at low intensities reveals strong polarization dependence and establishes that an optical-field component in the direction of the optical-field gradient is essential for this deformation process. A theoretical analysis based on the optical-field gradient force model is presented to account for the deformation behavior at low intensities. In the higher-intensity regime, however, a different mechanism is found to dominate the surface deformation process. Simultaneous formation of two different types of topographic gratings is observed in a two-beam interference experiment. The phase relationship between these surface relief gratings and the interference intensity pattern was deduced based on the results from the single-beam experiments. The erasing behaviors of the two distinct surface relief gratings were experimentally investigated to highlight the two mechanisms involved in these grating recordings. © 1999 American Institute of Physics.
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  • 61
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4515-4519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The four organic–organic heterointerfaces formed by depositing the organic semiconductor bathocuproine on tris(8-hydroxy-quinoline)aluminum (Alq3), N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′ biphenyl-4,4″ diamine (α-NPD), 4,4′-N,N′-dicarbazolyl-biphenyl (CBP), and copper phthalocyanine (CuPc) have been studied using ultraviolet photoelectron spectroscopy. The relative positions of the vacuum levels and highest occupied molecular orbital levels of the organics were measured at each interface. Within our experimental uncertainty of 100 meV, the vacuum levels were found to align at all four interfaces. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4997-5003 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs when exposed to a 7 V anodic bias in aqueous HCl, forms pitted structures from which visible photoluminescence has been observed. Previous work in our laboratory identified the source of the luminescence to be arsenic oxide microcrystals, formed during the electrochemical oxidation, which evolve in composition and morphology during the course of the anodic processing. The density and size of pits is dependent on the solution conditions as well as the applied potential program (stepped vs swept to 7 V. At early times (t〈30 min) the pits are composed of a mixture of small (∼1 μm) and larger (10's of μm) faceted microcrystals identified by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis to be a combination of As(III) and As(V) oxides. At longer times As(III) oxides predominate, and the smaller microcrystals are no longer observed, suggesting that the smaller microcrystals are As(V) oxide, and that they evolve chemically into As(III) oxide over the course of the oxidation. A suitable reaction pathway which explains the observed predominance of As(III) species is suggested. The luminescence properties of these electrochemically produced structures were investigated by near-field excitation. The luminescent properties evolve in parallel with the morphology and composition although the form of the spectrum is invariant in time and consistent with that obtained from bulk As2O3 and As2O5. The similarity of emission obtained from the two types of microcrystals suggests an impurity-related origin. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5026-5035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy resolution of a method for measuring localized-state distributions in amorphous and polymeric semiconductors has been improved in terms of Tikhonov regularization. The method is based on the analysis of transient photoconductivity data using Laplace transforms, and is valid for both pre- and postmonomolecular recombination regimes of the transient photoconductivity. The improvement of the energy resolution is shown using transient photoconductivity data numerically generated from model localized-state distributions appropriate for the materials. In addition, the measurement of localized-state distributions from time-of-flight transient photocurrents is examined. The applicability of the method with improved energy resolution is demonstrated for undoped hydrogenated amorphous silicon, poly(para-phenylene vinylene) and poly(methylphenylsilane). © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4004-4007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation kinetics of silicon in inductively coupled oxygen plasma (ICP) was studied at temperatures ranging from 350 to 450 °C. The oxide growth kinetics was described by a linear-parabolic growth law, with a rapid initial growth and a negative linear-rate constant. Under oxygen pressure of 10 mTorr, the initial oxide growth at 350 °C (thickness below 25 nm) was faster than at 400 °C. An analysis of transverse-optical mode frequencies and etch rates indicated that the density of the surface oxide was lower than that of the bulk oxide. The oxidation kinetics was explained qualitatively by assuming that the ICP oxide consisted of a surface layer with a larger diffusion coefficient and a bulk layer with a smaller diffusion coefficient. On the other hand, the ICP oxidation of silicon with a thin chemical oxide showed a positive linear-rate constant and no surface layer effect, supporting the fact that the oxide grown by the ICP oxidation has a low-density surface layer with a larger diffusion coefficient. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4040-4042 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose evaporative induction heating as a method for the reliable production of coatings for glass cells suitable for the optical pumping and storage of hyperpolarized xenon. The long spin-lattice relaxation times of hyperpolarized xenon-129 contained in cells coated with polyethylene or dotriacontane showed that high quality coatings could be prepared this way. Measurements on cells coated with deuteriated versions of these compounds showed that the expected improvement in performance with isotopic substitution did not occur. This leads to some questions about the level of understanding of wall-induced relaxation in polarization cells. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 4049-4051 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy ion-induced secondary electron emission from the surface of thin (500–5000 Å) polycrystalline MgO films has been investigated with various noble gas ions at energies ranging from 45 to 300 eV. The dependence of secondary electron emission coefficient γi on the type and energy of ions is reported and interpreted in terms of electron ejection mechanisms. As-deposited MgO films showed an initial fluctuation in the secondary emission current, which upon annealing or after a certain ion bombardment time irreversibly disappeared. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4052-4054 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-temperature dielectric properties of thin-film AlN that were pulsed-laser deposited on a heavily doped n-type 6H–SiC substrate are investigated from 25 to 450 °C. Capacitor leakage current densities of low 10−8 A/cm2 at 25 °C and mid 10−3 A/cm2 at 450 °C are reported for a 1.7 MV/cm dielectric field. The primary high-temperature leakage mechanism appears to be Schottky emission with a zero-field barrier height of 1.76 eV. A dielectric strength in excess of 1.7 MV/cm at 450 °C is reported. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 2945-2952 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high accuracy measurements of gain, loss, and transparency energy in long-wavelength semiconductors based on a hybrid approach using the fundamental relationship between the gain and the spontaneous emission spectra. Independent measurements of optical gain, transparency energy, and loss show the accuracy and validity of this technique. These results are compared with those obtained by the non-Markovian gain model with many-body effects under the spontaneous emission transformation method. It is found that the hybrid approach for the gain spectrum alleviates many of the problems related to the poor signal to noise ratio in the amplified-spontaneous emission near and below the band edge. The theoretical spectra compare well with the measured spectra for both the transverse electric and transverse magnetic polarizations. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2959-2966 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes the use of optical methods based on picosecond transient gratings to stimulate and detect ultrasonic acoustic modes in several important structures with dimensions less than ∼200 μm: single-mode optical fiber, cylindrical microcapillary tubes, and planar microfluidic networks. The measurements illuminate the characteristics and dispersion of acoustic modes—Rayleigh and Lamb-like modes and Scholte–Stoneley waves—in three-dimensional microsystems with feature sizes that are comparable to the modal wavelengths. The results demonstrate, for example, the ability to measure, rapidly and nondestructively, the mechanical characteristics of on-fiber metal and polymer coatings. They also illustrate real-time monitoring of the elastic and loss moduli, and thermal diffusivities of nanoliter volumes of material contained in planar microfluidic channels during the course of photochemical curing reactions. The techniques are potentially useful for applications ranging from characterization of high-frequency acoustic modes in optical fiber that may be relevant to new types of in-fiber acousto-optic filters and modulators, to detection in microfluidic total analysis systems. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 4713-4713 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 1999 American Institute of Physics.
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  • 71
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3508-3511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous work has shown that when short-pitch cholesteric liquid crystals are aligned in cells with the helical axis in the plane of the substrate in a well-defined direction, then application of an electric field across the cells may result in microsecond in-plane switching due to the flexoelectric effect. Moreover, the response to the electric field is linear and temperature independent. Hence this device geometry has great potential since fast, temperature-independent switching with analogue gray scale may be realized. Up to now, however, the alignment of the helix in the plane of the substrate achieved, for example, by rubbed polyimide layers has been rather unstable, since it relaxes to a Grandjean texture in a time scale determined by the cell thickness. This time is generally of the order of minutes. Here we report a method for the attainment of stable anchoring of the unidirectional lying helix texture using periodic anchoring conditions. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 4709-4710 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt to use direct simulation Monte Carlo (DSMC) method for pulsed laser ablation at laser fluence as high as 17 J/cm2 is analyzed. Under these conditions, however, the evaporation flux is very high which results in a very high laser plume density. Therefore, both collision rate and collisional zone near the target are too large to effectively use a conventional DSMC technique whose possibilities are always limited by finite computer storage and available computation time. Nevertheless, the authors of the considered paper claim to propose a new approach to overcome the restrictions of DSMC. We found that the main idea of the approach is the plume reduction in space. However, according to the dimension theory, under this transformation one should preserve the Knudsen number, that defines the degree of rarefaction, and, hence, the number of cells to be used in DSMC. Therefore, the number density of the plume should be increased and particle collisions should be calculated with higher frequency than in the case without space reduction. In our opinion, this important point was neglected by the authors, the collision frequency was not increased, and the number of cells was not properly chosen. As a result, the proposed approach does not break the DSMC restrictions, and the results obtained do not correspond to the experiments with high evaporation flux. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 3694-3698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical investigation of plane-wave electromagnetic scattering in active dielectric sphere predicted the existence of anomalous resonances that occur at discrete wavelengths. These resonances may be understood from a leaky wave phase matching boundary conditions, in which the gain in the dielectric exactly makes up for the radiative loss of a mode. This results in a radiative mode that does not decay in time, therefore it is described as a lossless radiative mode. Experiments have been performed to verify the existence of these resonances. Optical pumping was used to provide the gain, and the threshold of each resonant mode was found to be a function of the dye concentration and the radius of the dielectric sphere. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3714-3720 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN quantum well (QW) structures are grown on c-plane sapphire substrates by molecular beam epitaxy. Control at the monolayer scale of the well thickness is achieved and sharp QW interfaces are demonstrated by the low photoluminescence linewidth. The QW transition energy as a function of the well width evidences a quantum-confined Stark effect due to the presence of a strong built-in electric field. Its origin is discussed in terms of piezoelectricity and spontaneous polarization. Its magnitude versus the Al mole fraction is determined. The role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures. Straightforward electrostatic arguments well account for the overall trends of the electric-field variations. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 3745-3750 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index of a LiF crystal surface layer irradiated by low-energy electrons is modified by the stable formation of color centers embedded in it. A simplified dipole-electromagnetic field interaction model has been adopted in order to estimate the dispersion curves of colored LiF from a single optical transmittance measurement. The excellent agreement with the corresponding experimental curves (obtained by means of spectrophotometry and ellipsometry) demonstrates this to be a promising approach for LiF-based optical waveguide characterization.© 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 3768-3772 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a semi-empirical pseudopotential method, a set of band-structure calculations are performed on a range of GaInN and GaAlN alloys in both the zinc-blende and wurtzite structures. Pseudopotentials for the bulk materials are described by suitable V(q) functions, and these are used to construct the alloy pseudopotentials. The band gap as a function of alloy composition is studied, and it is found that there is no significant bowing in the case of GaAlN. The bowing is larger for GaInN, although heavily dependent on the strain present. A more detailed study of the wurtzite alloys is carried out for low Al and In fractions. Wurtzite k⋅p parameters for several alloys at concentrations commonly used in devices are obtained from the semi-empirical band structure using a Monte Carlo fitting procedure. © 1999 American Institute of Physics.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3159-3164 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate that the temporal shape of the four-wave mixing (FWM) signal in thick semiconductors is significantly influenced by the absorption of the generated FWM signal during its propagation through the sample as well as the pulse broadening effect, by performing the time-integrated (TI) and time-resolved (TR) FWM experiments, and by measuring the pulse shape of the transmitted probe beam in the presence of a pump beam for a 500- and a 100-μm-thick undoped GaAs. We find that the temporal shape of the TR-FWM signal in the vicinity of the exciton resonance depends on the sample thickness and time delay between two incident pulses. As the excitation laser is tuned far below the exciton resonance, however, the propagation effect of the FWM signal itself through the sample becomes dramatically weaker and the temporal shape of the FWM signal resembles the distorted probe pulse shape. Furthermore, the peak intensities of the TI- FWM signals near the exciton resonance are smaller in the thicker sample than in the thinner sample, whereas in the thick sample are larger well below the exciton resonance, due to the absorption of the FWM signal. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 3175-3180 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1–31 Ω cm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady-state photoconductance method, allowing carrier lifetime measurements over a very broad injection range between 1012 and 1017 cm−3. To eliminate all recombination channels not related to the degradation effect, the difference of the inverse lifetimes measured after and before light degradation is evaluated. A detailed analysis of the injection level dependence of the carrier lifetime change using the Shockley–Read–Hall theory shows that the fundamental recombination center created during illumination has an energy level between Ev+0.35 and Ec−0.45 eV and an electron/hole capture time constant ratio between 0.1 and 0.2. This deep-level center is observed in all samples and is attributed to a new type of boron–oxygen complex. Besides this fundamental defect, in some samples an additional shallow-level recombination center at 0.15 eV below Ec or above Ev is found to be activated during light exposure. This second center dominates the light-degraded carrier lifetime only under high-injection conditions and is hence only of minor importance for low-injection operated devices. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 3181-3186 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated charge transport in two electroluminescent block copolymers, poly(1,8-octanedioxy-2,6-dimethoxy-1,4-phenylene-1,2-ethenylene-1,4-phenylene-1,2-ethenylene-3, 5-dimethoxy-1,4-phenylene) and poly(1,8-octanedioxy-2,6-dimethoxy-1,4-phenylene-1,2-ethenylene-1,4-phenylene-1,2-ethenylene1,4-phenylene-1,2-ethenylene-3,5-dimethoxy-1,4-phenylene), using current versus voltage measurements performed on metal/polymer/metal structures. The effective mobility of holes has been determined for both polymers. The characteristic charge carrier trap distribution energies of the polymers for the case of Al electrodes have also been determined. © 1999 American Institute of Physics.
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    Journal of Applied Physics 86 (1999), S. 3199-3203 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport properties of extremely thin phosphosilicate glass (PSG) films containing Si nanocrystals (nc-Si) a few nanometers in diameter were studied. Samples were prepared by cosputtering Si and PSG targets, and post annealing. Periodic Coulomb staircases were clearly observed in the dc current–voltage (I–V) characteristics along the vertical direction of films. Although the step structure was broadened with increasing the temperature, it remained up to 200 K. The I–V curve could be well fitted by Monte Carlo simulation with a simple double-barrier structure model. Advantages of using PSG instead of SiO2 as surrounding matrices of nc-Si to observe single-electron tunneling effects are discussed. © 1999 American Institute of Physics.
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  • 81
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3209-3212 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of, and the effects of cesium (Cs) and oxygen (O) adsorption on, the p-GaN(001) surface are investigated via photoemission spectroscopy. Bulk- and surface-sensitive photoemission measurements, and oxygen exposure of clean surfaces, demonstrate the existence of filled surface states which extend ∼0.6 eV above the valence band maximum. The valence band maximum measured after the removal of the surface states gives a downward band bending and electron affinity equal to 1.2±0.2 and 3.3±0.2 eV, respectively. The surface dipole layer induced by exposure to oxygen followed by Cs deposition lowers the vacuum level by 2.8±0.3 eV with respect to the valence and conduction band edges. Under these conditions, the vacuum level is approximately 0.7 eV below the conduction band minimum of the bulk, corresponding to the effective negative electron affinity at this surface. © 1999 American Institute of Physics.
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  • 82
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3234-3240 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition and structure of Si3N4/thermal (native and wet) SiO2 interface in oxide–nitride–oxide structures are studied by using secondary ion mass spectroscopy, electron energy loss spectroscopy (EELS) and Auger electron spectroscopy (AES) measurements. EELS and AES experiments show the existence of excess silicon at the Si3N4/thermal SiO2 interface. Excess silicon (Si–Si bonds) at Si3N4/SiO2 interface exists in the form of Si-rich silicon oxynitride. Numerical simulation of the Si–Si bond's electronic structure by using semiempirical quantum-chemical method (MINDO/3) shows that Si–Si defects act as either electron or hole traps. This result explains the abnormally large electron and hole capturing at this interface reported earlier. © 1999 American Institute of Physics.
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  • 83
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3241-3246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiative recombination rates of free carriers and lifetimes of free excitons have been calculated in the wide band gap semiconductors GaN, InN, and AlN of the hexagonal wurtzite structure, and in their solid solutions GaxAl1−xN, InxAl1−xN and GaxIn1−xN on the base of existing data on the energy band structure and optical absorption in these materials. We determined the interband matrix elements for the direct optical transitions between the conduction and valence bands, using the experimental photon energy dependence of absorption coefficient near the band edge. In our calculations we assumed that the material parameters of the solid solutions (the interband matrix element, carrier effective masses, and so on) could be obtained by a linear interpolation between their values in the alloy components. The temperature dependence of the energy gap was taken in the form proposed by Varshni [Physica 34, 149 (1967)]. The calculations of the radiative recombination rates were performed in a wide range of temperature and alloy compositions. © 1999 American Institute of Physics.
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  • 84
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3797-3803 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results and a model describing long-term radiation-induced changes in extrinsic photoconductors are presented. Experiments, carried out at low temperatures and low photon backgrounds, simulated typical operating conditions of extrinsic infrared detectors used in space- based platforms and instruments. The observed changes in the carrier lifetime and current–voltage characteristics at a low electric field, as well as a long-term relaxation of the effects after removal of the irradiation are related to a recharging of the impurities in the bulk during the irradiation. The proposed model agrees well with experimental data and despite its simplicity, provides relevant information on how to deal with these effects in practical applications. © 1999 American Institute of Physics.
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  • 85
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3826-3832 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of oxidized Ni/Au films on p-GaN was examined to elucidate the formation of a low resistance ohmic contact to p-GaN with a field-emission gun transmission electron microscope in conjunction with composition analyses. The p-GaN/Ni/Au samples were heat treated at 500 °C in air mainly composed of a mixture of crystalline NiO, Au, and amorphous Ni–Ga–O phases. Small voids adjacent to the p-GaN film were also observed. The as-deposited Au film converted into discontinuous islands containing small amounts of Ni that connect with p-GaN. NiO formed a continuous film at the surface that covers the Au islands and the amorphous Ni–Ga–O phases. Moreover, NiO partially contacts p-GaN as well as Au islands and the amorphous Ni–Ga–O phase. The orientation relationship of the crystalline NiO, Au-rich islands, and p-GaN film was identified as NiO(111)//Au(111¯)//GaN(0002) and NiO[11¯0]//Au[11¯0]//GaN[112¯0]. The results suggested that Ni atoms diffuse through the Au layer onto the surface and react with oxygen to form NiO, whereas Au atoms diffuse towards the inside to form a Au–Ni alloy. The microstructural examination indicated that the crystalline NiO and/or the amorphous Ni–Ga–O phases may significantly affect the low resistance ohmic contact to p-GaN. © 1999 American Institute of Physics.
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  • 86
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3983-3987 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-emission properties of cold cathodes produced using nano-porous anodic aluminum oxide (AAO) templates are reported. Several types of field emitters were fabricated: aligned copper nanowires grown halfway up the parallel nano-pores of the AAO; aligned multiwalled carbon nanotubes grown to the top of the pores; surfaces overgrown with random tangles of carbon nanotubes; and empty AAO templates. Significant field-emission currents (field enhancement values ∼ 1800) were obtained at threshold voltages as low as 80 V (corresponding to fields of 3–4 V/μm) on samples of nanotube tangles. Perfectly aligned carbon nanotubes were less efficient field emitters and had lower field enhancement values. These observations are explained in terms of the mean separation of active tips in the two sets of samples. Empty templates and metal nanowire arrays show lower field enhancements and higher threshold electric fields (40–70 V/μm). In these samples significant field-emission currents are produced at relatively low applied voltages of 110–300 V due to the small inter-electrode separations achieved on depositing a metal grid directly on the surface of the porous template. © 1999 American Institute of Physics.
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  • 87
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4023-4028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A straightforward nondestructive method based on the probabilistic theory of ultrasonic wave propagation [JSME Int. J., Ser. A, Mech. Mater. Eng. 39, 266 (1996)] was developed to quantitatively evaluate porosities, pore shapes, and pore sizes in advanced porous ceramics merely by measuring the ultrasonic delay time and pulse width. The extensive ultrasonic measurements and image microanalyses were conducted in advanced porous alumina, sialon, and zirconia with different porosities. A universal equation was established for porous ceramics, clarifying the intrinsic relationships between ultrasonic characteristics (propagation time and pulse width) and pore distribution (porosity, pore shape, and pore size). The critical volume fraction porosity were estimated separately as approximately 0.06, 0.11, and 0.10 in these ceramics using image microanalysis techniques, at which the transition from the continuous to discontinuous pore phase takes place during sintering. An excellent agreement of two useful corollaries with the data on the above nondestructive and destructive examinations validates the quantitative applicability of the probabilistic theory to pore characterization of advanced ceramics, metals, and their combinations. © 1999 American Institute of Physics.
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  • 88
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4018-4022 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-section transmission electron microscopy has been applied to study the growth kinetics of oxide of WSi2 on (001)Si and polycrystalline silicon (poly Si) in the dry oxidation process. The linear activation energy and the parabolic activation energy of WSi2 on (001)Si were found to be 0.8±0.2 and 1.0±0.2 eV for samples dry oxidized at 800–890 °C for 10–60 min, respectively. On the other hand, the linear activation energy and parabolic activation energy of WSi2 on polycrystalline silicon for samples dry oxidized at 800–890 °C for 10–60 min were 1.0±0.2 and 1.8±0.2 eV. The linear activation energy is attributed to the diffusion of Si atoms from the substrate to the reaction interface. The different parabolic activation energies of 1.0 and 1.8 eV for WSi2 on (001)Si and poly Si, respectively, indicate significant difference in diffusion of O2 through grown SiO2. It is conceivable that stress generated during oxidation and the amount of fluorine atoms, introduced during the low pressure chemical vapor deposition process, present in the silicide layer and grown oxide, can influence the oxide quality and oxidation kinetics. © 1999 American Institute of Physics.
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  • 89
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4046-4048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The washing effects on the liquid crystal (LC) alignment capability on the rubbed polyimide PI surface were investigated. The induced optical retardation from the nonwashing process on the rubbed PI surface is larger when compared with the washing processes; it is attributed to the removal of dust in the washing process. The generated pretilt angles in 4-n-pentyl-4′-cyanobiphenyl (5CB) from the nonwashing process on the rubbed PI surface are almost the same as that of the rubbed PI surface after washing process. The polar anchoring energy of the weakly rubbed PI surfaces is increased by the washing process; the washing effects are clearly observed. The surface order parameter SS of 5CB for all washing processes is larger than that with the nonwashing process; it is attributed to the washing process. Consequently, we suggest that the LC aligning capability is largely attributed to the washing effects. © 1999 American Institute of Physics.
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  • 90
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2933-2940 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe visible pumping of the ultraviolet 4f5d emission of Pr3+ in Y3Al5O12 by ion–ion upconversion. This process contributes significantly to the 4f5d population, indicating that it should be taken into account (along with excited state absorption) when Pr hosts are evaluated for possible upconversion pumped laser operation in the ultraviolet. In addition, we find that a single, time-independent energy transfer parameter cannot explain the observed 4f5d decay wave forms, but that the familiar Förster theory for range-dependent strength of energy transfer can be adapted to explain the main features of our data. Förster theory leads to a formula which the authors believe can be used to assess the potential for upconversion-based lasing on specific transitions. © 1999 American Institute of Physics.
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  • 91
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2967-2973 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-pass laser amplifiers have advantages of compactness and efficiency in the amplification of optical signals, and such amplifiers have been employed in a wide range of optical systems. Work in this area is reviewed briefly, and analytical solutions are obtained for the intensity of the electromagnetic waves in double-pass homogeneously-broadened high-gain laser amplifiers. Expressions are derived relating the output power to the input, including the effects of arbitrary mirror reflectivity and frequency detuning from line center. In the limits of weak saturation and of high reflectivity the results are consistent with earlier studies. © 1999 American Institute of Physics.
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  • 92
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2984-2989 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a simulation of ion and fast neutral transport in the sheath region of a direct current magnetron discharge under different pressures by using the Boltzmann equation and the database from the two-dimensional (2D) results of a plasma structure, which was given by a hybrid model. Evolution of the erosion profile on the target surface has been predicted by using the 2D energy distributions of ions and fast neutrals incident on the target (cathode) surface. We confirmed that an accurate prediction of the erosion profile can be obtained by assuming that the constant sputtering yield corresponds to the cathode voltage under conditions of low pressures that make use of the film deposition processes. © 1999 American Institute of Physics.
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  • 93
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3015-3019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect corresponding to shallow etch pits (S-pits) on GaP wafer has been revealed. It is a vacancy-type Frank dislocation loop which surrounds a stacking fault. It is proposed that this loop is formed by the condensation of excess gallium vacancies during cooling of the GaP crystal. The phosphorus precipitates on the dislocation loop result from the condensation of the emitted phosphorous interstitials accompanied by the growth of the loop. Stoichiometry control is necessary to suppress the formation of S-pit defects in low dislocation density compound semiconductor crystals. © 1999 American Institute of Physics.
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  • 94
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2651-2654 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe particles with sizes in the range 1–5 nm, formed by a gas-aggregation method and deposited onto graphite and C60 supports, were studied by x-ray photoemission spectroscopy, x-ray absorption spectroscopy, and magnetic linear dichroism. Clusters deposited onto a C60 coated graphite substrate become embedded within the fullerene film, and have an increased resistance to oxidation compared to exposed clusters supported on a graphite surface. No evidence for hybridization between the electronic states of Fe and C60 is seen. The magnetic dichroism signal of the exposed clusters increases sharply with the film thickness because of the increased cluster interactions. © 1999 American Institute of Physics.
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  • 95
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2660-2667 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport and optical measurements in polycrystalline Pbl2 are reported as part of a study to evaluate the material for large area x-ray imaging applications. The films are deposited by vacuum evaporation with thickness 20–100 μm and have grain sizes of up to 10 μm. The room temperature hole drift mobility measured by time-of-flight is 2×10−2–1.5×10−1 cm2/V s, depending on the specific sample, with an activation energy of 0.25 eV. Hole charge collection measurement gives about 10−6 cm2/V for the mobility–lifetime product. Details of the electron transport were not determined in this study because the mobility is too small. The hole transport is discussed in terms of a trapping model with either a discrete level above the valence band or a disorder-induced band tail. Optical absorption, photoconductivity, and Hall effect measurements are also reported. © 1999 American Institute of Physics.
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  • 96
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2677-2683 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical expression is found for the transmitted wave packet through a general, asymmetric double barrier structure, as well as for its width. This analytical expression is shown to be in agreement with previous treatments of wave packet tunneling and, as such, is in agreement with previous numerical calculations. © 1999 American Institute of Physics.
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  • 97
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2668-2676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and doping dependencies of electron mobility in GaN have been calculated using an iterative technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and electron plasmon are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using a phase-shift analysis. The compensation ratio is used as a parameter with a realistic charge neutrality condition. Comparisons with experimental data confirm the present calculation over a wide range of temperatures and electron concentrations. Mobility and electron concentration data from Hall measurements reveal a degenerate layer at the GaN-substrate interface. This degenerate layer affects the bulk mobility and electron concentration and needs to be accounted for in order to extract reliable experimental values of the bulk electron mobility. © 1999 American Institute of Physics.
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  • 98
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3030-3035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed experimentally the macroscopic migration of implanted deuterium in silicon with a new method in which the implanted deuterium concentrations were measured by counting the protons emitted from the nuclear reaction 2H(d,p)3H in the implanted region. The experimental results support a new model in which a macroscopic migration of gas bubbles containing the implanted deuterium in the form of D2 molecules exists in the implanted region and D2 molecules migrate macroscopically along the network. We describe the growth of the macroscopic network with percolation theory. From quantitative analysis of the experimental results, the density critical exponent β was obtained and found to be close to the theoretical value for two-dimensional systems predicted by the scaling theory of percolation. © 1999 American Institute of Physics.
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  • 99
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2696-2699 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoconductance method was used to determine the band-gap energy and, therefore, the Al mole fraction of bulk AlxGa1−xN and AlxGa1−xN/GaN heterostructures. The results are compared with those obtained by a more elaborate photoluminescence method. © 1999 American Institute of Physics.
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  • 100
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3863-3872 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Due to their very thin tunnel barrier layer, magnetic tunnel junctions show dielectric breakdown at voltages of the order of 1 V. At the moment of breakdown, a highly conductive short is formed in the barrier and is visible as a hot spot. The breakdown effect is investigated by means of voltage ramp experiments on a series of nominally identical Co/Al2O3/Co tunnel junctions. The results are described in terms of a voltage dependent breakdown probability, and are further analyzed within the framework of a general model for the breakdown probability in dielectric materials, within which it is assumed that at any time the breakdown probability is independent of the (possibly time-dependent) voltage that has been previously applied. The experimental data can be described by several specific forms of the voltage breakdown probability function. A comparison with the models commonly used for describing thin film SiO2 breakdown is given, as well as suggestions for future experiments. © 1999 American Institute of Physics.
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