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  • 2000-2004  (47,117)
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  • 2001  (47,117)
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  • 101
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2411-2415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron transistor (SET) comprising highly resistive Cr thin-film strips (sheet resistance ∼4 kΩ) instead of traditional tunnel barriers is reported. Two such strips (∼1 μm long) connect two Al outer electrodes to an Al island 1 μm in length equipped with a capacitively coupled gate. This transistor with a total asymptotic resistance of 110 kΩ showed a perfect Coulomb blockade and strictly e-periodic reproducible modulation by the gate in wide ranges of bias (V) and gate (Vg) voltages. In the Coulomb-blockade region (|V|≤ about 0.5 mV), we observed a strong suppression of the transport current, allowing modulation curves V(Vg) with appreciable amplitude to be measured at a fixed bias current value I as low as 100 fA. The background-charge noise of our SET was found to be similar to that of typical Al/AlOx/Al tunnel-junction single-electron transistors, namely δQ(approximate)5×10−4e/Hz at 10 Hz. The electron transport mechanism is discussed. © 2001 American Institute of Physics.
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  • 102
    Electronic Resource
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2422-2426 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effect of repeated thermal cycles in some of the Pr0.5Ca0.5Mn1−xMxO3 (M=Cr, Co, and Ni and x=0.02–0.05) compounds which undergo a spontaneous (H=0 T) insulator to metal transition below the temperature Tp driven by percolation of ferromagnetic clusters in a charge ordered background. The zero field resistivity (ρ) shows an anomalous behavior upon thermal cycling between a high-(TS)- and a low (TF)- temperature limit: While ρ for T(very-much-greater-than)Tp is unaffected, it increases significantly for T≤Tp and Tp shifts down each time upon thermal cycling. In contrast, ρ at a given temperature decreases slowly with time. The anomalous increase of resistivity depends upon the ratio of the charge ordered to ferromagnetic phase fraction and decreases with increasing x and the applied magnetic field (H). We also show that a similar effect can be obtained for Pr0.5Ca0.5Mn0.97Al0.03O3 and Pr0.55Ca0.45MnO3 under H=5 T although these compounds do not exhibit insulator–metal transition in zero field. The low field magnetization study on Pr0.5Ca0.5Mn0.98Cr0.02O3 suggests that the ferromagnetic Curie temperature remains unaffected, whereas the ferromagnetic phase fraction decreases with repeated cycles. We suggest that the observed anomaly is caused by an increase of interfacial strain between charge ordered and ferromagnetic phases. © 2001 American Institute of Physics.
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  • 103
    Electronic Resource
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1266-1270 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sensitive polarized spectroscopies, reflectance difference spectroscopy and photocurrent difference spectroscopy, are used to study the characteristic of the in-plane optical anisotropy in the symmetric and the asymmetric (001) GaAs/Al(Ga)As superlattices (SLs). The anisotropy spectra of the symmetric and the asymmetric SLs show significant difference: for symmetric ones, the anisotropies of the 1HH→1E transition (1H1E) and 1L1E are dominant, and they are always approximately equal and opposite; while for asymmetric ones, the anisotropy of 1H1E is much less than that of 1L1E and 2H1E, and the anisotropy of 3H2E is very strong. The calculated anisotropy spectra within the envelope function model agree with the experimental results, and a perturbation approach is used to understand the role of the electric field and the interface potential in the anisotropy. © 2001 American Institute of Physics.
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  • 104
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1275-1279 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate optical properties of the deterministic network model for fractal metallic clusters at the percolation threshold. As input data we used the experimental bulk dielectric function of gold, aluminum, and nickel. Sharp absorption resonances in the optical spectra are observed only for gold. They are pronounced only for clusters consisting of particles with sizes larger than the mean free path of the conduction electrons. In smaller particles the peaks are heavily damped due to scattering of electrons by the particle surfaces. © 2001 American Institute of Physics.
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  • 105
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    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1292-1296 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence excitation (PLE) spectra of CuInS2 crystals grown by the traveling heater method (THM) and the iodine vapor transport method (IT) have been examined. THM crystals show significant structure with many peaks and dips in the PLE spectra, whereas IT crystals exhibits two clear peaks at two free exciton energies in the spectrum. The peak and dip structures of PLE spectra at the free exciton energy depend on the monitoring PL peak, the kind of crystals, and temperatures. A proposed relaxation process of excited electron–hole pairs explains peak and dip structures of PLE spectra at the free exciton energies. © 2001 American Institute of Physics.
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  • 106
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1297-1302 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that ferromagnetism and insulator to metal transitions in small A site cation manganites Pr1−xCaxMnO3 are induced by rhodium doping. Colossal magnetoresistance properties are evidenced for a large compositional range (0.35≤x〈0.60). The ability of rhodium to induce such properties is compared to the results obtained by chromium and ruthenium doping. Models are proposed to explain this behavior. © 2001 American Institute of Physics.
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  • 107
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1286-1291 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of middle wavelength/long wavelength (MW/LW) dual-band HgCdTe photovoltaic detectors was examined theoretically. An original iteration scheme was used to solve the system of nonlinear continuity equations and the Poisson equation. The effect of composition and doping profiles on the heterojunction detector parameters is presented. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. All quantities are functions of the electric potential and Fermi quasi-levels. The results of calculations are presented as maps showing spatial distribution of electrical potential, photoelectrical gain, sensitivity, and density of noise generation. The theoretical predictions of heterojunction device parameters are compared with available experimental data. © 2001 American Institute of Physics.
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  • 108
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1280-1285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond thin films deposited by electron cyclotron resonance-assisted chemical vapor deposition on Si (111) were investigated using spectroscopic phase-modulated ellipsometry from the near IR to UV range (830–270 nm). Analysis of the raw ellipsometry data [ψ(λi), Δ(λi)] by applying the conventional Bruggeman effective medium theory and linear regression analysis provided details about the film microstructure: (i) the multilayer structure and the component layer thickness of the films; (ii) the volume fraction of the constituents (sp3- and sp2- bonded carbon) and of voids (fv) in the bulk layer (L2); (iii) the inhomogeneity of the structure along the growth axis and its variation with the seeding density; and (iv) the surface roughness layer thickness (dS). A simplified three-layer structural model consisting of an interfacial layer, an intermediate (or bulk) layer, and a top surface roughness layer has been proposed that simulates the ellipsometry data reasonably well. The results obtained through ellipsometry modeling, such as surface roughness and overall film thickness, were compared with those from atomic force microscopy and profilometry, respectively, in order to validate the model employed. Typically, high surface roughness values around 60 nm were found for films grown under different substrate temperatures and oxygen-to-carbon ratios. It was also found that a combination of relatively high substrate temperature and O/C ratio can be used to reduce the surface roughness to around 25 nm. In general, the void fraction (fv) of the bulk layer decreases as a function of seeding density, indicating the formation of a denser film. The sp2-bonded carbon fraction (fsp〈sup ARRANGE="STAGGER"〉2 C) also varies with the process parameters. These results (fv and fsp〈sup ARRANGE="STAGGER"〉2 C) for the bulk layer and its behavior with respect to process parameters are discussed. © 2001 American Institute of Physics.
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  • 109
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2321-2328 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-doped gallium–arsenic–nitrogen thin films were prepared by cosputtering a crystalline GaAs target partially covered with small pieces of metallic erbium in an Ar+N2 atmosphere. The films were deposited near room temperature and under increasing partial pressures of nitrogen P(N2). The investigation of the films included ion beam analysis, optical spectroscopy in the infrared–visible–ultraviolet energy ranges, Raman scattering, and photoluminescence measurements. According to the experimental results, all films present an amorphous structure and nitrogen contents that scale with P(N2). Increasing amounts of nitrogen induce the widening of the optical band gap and a systematic redshift of the Raman signal of the films considered. The intensity of the Er-related light emission at ∼0.8 eV also increases at higher nitrogen contents. A detailed study of the absorption bands in the infrared region allowed the identification of different vibration modes involving gallium, arsenic, and nitrogen atoms. The combined analysis of the compositional data and of the infrared absorption bands provided a constant of proportionality between the nitrogen content in the films and the integrated absorption due to Ga–N bonds. Where applicable, comparisons between the optoelectronic and structural characteristics of amorphous and crystalline gallium–arsenic–nitrogen compounds were made. © 2001 American Institute of Physics.
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  • 110
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2333-2337 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ground state and binding energies for a hydrogenic impurity in a spherical quantum dot within a uniform magnetic field, are calculated through the variational method in the frame of the effective-mass approximation. The trial wave functions used in the calculation are flexible enough to treat the cases of on-center, off-center, or edge impurities. Overall results show reasonable agreement when compared with other calculations. Interestingly enough, in the case of an off-center impurity, a critical point from which bulk states evolve to surface or edge states is also found. The dependence of this point on the magnetic field strength is discussed and interpreted. © 2001 American Institute of Physics.
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  • 111
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1898-1902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, the conduction mechanisms in nitride–oxide stacked structures on Si are investigated experimentally and theoretically. Amorphous silicon nitride films (3–5 nm thick) were deposited by low-pressure chemical vapor deposition. The ultrathin oxide layers (1–1.5 nm thick) were formed by reoxidization of the nitride layer at about 900 °C in wet ambient. The current–voltage characteristics for negative and positive gate polarities are asymmetric. An abrupt current increase under negative gate bias prior to dielectric breakdown is reported for this structure. This current–voltage phenomenon is attributed to trap-controlled single-carrier steady-state space-charge-limited conduction—the solid state analog of space-charge-limited current in a vacuum diode. Details of space-charge-limited conduction parameters depend on the thickness of the dielectric film and temperature. The study of those parameters can yield information about the traps inside nitride–oxide films. Such information can provide considerable insight into charge transport mechanisms and carrier trapping in these materials, which are important in understanding the physical processes involved in the basic film properties. © 2001 American Institute of Physics.
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  • 112
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6066-6069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitridation of GaAs, InAs, and InSb by low-energy N2+ ion bombardment at room temperature was studied by near-edge x-ray absorption fine structure (NEXAFS) and x-ray photoelectron spectroscopy measurements. The formation of thin surface nitride layers, consisting mostly of GaN or InN but also containing minor amounts of mixed nitrides, was observed. Besides the nitride-related features, sharp peaks in the NEXAFS due to π* resonance at 401.0 eV and correlated peaks at 403.8 eV in N 1s core level spectra were detected. Both spectral features could be assigned to the presence of interstitial nitrogen, most likely molecular nitrogen. It was found that the amount of interstitial nitrogen in the surface layer strongly depends on the AIII–BV semiconductor system and may be affected by modification of the conditions during low energy ion bombardment. © 2001 American Institute of Physics.
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  • 113
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6084-6091 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the elastic constants of langasite-type crystals (La3Ga5SiO14, La3Ga5.5Nb0.5O14, and La3Ga5.5Ta0.5O14) from measurements of the sound velocity of acoustic waves. Starting with the elastic tensor determined from bulk acoustic waves, we optimized the data set by investigating the influence of the elastic tensor components on the angular dispersion of surface guided waves. This procedure is particularly useful for accurate determination of the nondiagonal elements of the elastic tensor. Phase velocity calculations based on the new set of constants show an increased agreement with experimental data compared to the data set derived from bulk waves and previously published material data. © 2001 American Institute of Physics.
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  • 114
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6105-6109 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoelectrochemical (PEC) etching has been used to study defects in heteroepitaxial GaN layers. In Ga-polar layers PEC etching reveals only dislocations in the form of filamentary etch features (whiskers). Transmission electron microscopy (TEM) confirmed a one-to-one correspondence between the whiskers and straight threading dislocations, which are mainly of edge and mixed type. In N-polar layers, apart from dislocations, inversion domains (IDs) also give rise to the formation of more complex etch features that also have been confirmed by TEM. IDs of nanometer diameter result in formation of whiskers similar to the dislocation-related ones. However, when the diameter of IDs exceeds a critical size (about 100 nm), crater-like deep etch features are formed during PEC etching. Based on the mechanism of PEC etching of GaN in aqueous KOH solutions, it is argued that inversion domain boundaries are electrically active defects. © 2001 American Institute of Physics.
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  • 115
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6110-6113 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y2O3 films doped with Eu are grown by metalorganic chemical vapor deposition on Si(100) and yttria-stabilized zirconia (YSZ) (100). The mismatch is only 2.6% between the lattice constant of YSZ and half the lattice constant of Y2O3. The samples are characterized by x-ray diffraction, scanning electron microscopy, Rutherford backscattering, and photoluminescence. The films deposited on Si are polycrystalline. When films are deposited on YSZ, the Y2O3(100) direction is aligned with YSZ(100). The luminescence and the narrow x-ray diffraction lines indicate that a Y2O3:Eu film with high crystallinity is obtained without annealing. © 2001 American Institute of Physics.
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  • 116
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6120-6129 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The one-dimensional Schrödinger equation for an arbitrary potential with position-dependent mass is often solved by the transfer-matrix method. While the usual definition relates wave-function coefficients on two sides of an interface, this article presents an alternative approach, in which a propagation matrix evolves the wave function and its derivative between a pair of points. The formalism is developed without an a priori commitment to a breakdown of the potential into a series of flat, linear, or other types of segments. We obtain a Wick-expansion form for the matrix and also provide a geometrical interpretation based on the SL(2,R) group. Turning to a variably spaced discretized potential we show how this approach can be flexibly applied to any potential segments. We discuss explicitly the case of constant potential and the Wentzel–Kramers–Brillouin approximation, as well as the linear potential segment. For the latter, the obtained propagation matrix has definite advantages, from both speed and robustness standpoints. Applications to transport in the ballistic regime are discussed and explicit results are presented for a InP–InGaAs junction. © 2001 American Institute of Physics.
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  • 117
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6130-6134 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In our recent report, [Xu et al., Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n+ layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n+ conductivity is not only from the contribution of nitride-site oxygen (ON), but also from the gallium-site silicon (SiGa) donors, with activation energies 2 meV (for ON) and 42 meV (for SiGa), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. SiGa and ON should also be shallow donors and VGa–O or VGa–Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration NA=1.8×1017 cm−3, the second donor concentration ND2=1.0×1018 cm−3, and the compensation ratio C=NA/ND1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. © 2001 American Institute of Physics.
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  • 118
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6151-6155 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy Eij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E11〉E12〉E22, and Eij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. © 2001 American Institute of Physics.
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  • 119
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6182-6189 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison is made of the electrical effects of carbon in n- and p-type in situ doped polycrystalline Si1−yCy and Si0.82−yGe0.18Cy layers. Values of resistivity as a function of temperature, effective carrier concentration and Hall mobility are reported. The n-type polycrystalline Si1−yCy and Si0.82−yGe0.18Cy films show dramatic increases in resistivity with carbon content, rising from 0.044 Ω cm to 450 Ω cm (0 and 0.8% C) and 0.01 Ω cm to 2.4 Ω cm (0 and 0.6% C), respectively. In contrast, the increase in B-doped films is much less severe, rising from 0.001 Ω cm to 0.939 Ω cm (0 and 7.9% C) and 0.003 Ω cm to 0.015 Ω cm (0 and 4% C) for the Si1−yCy and Si0.82−yGe0.18Cy layers, respectively. The grain boundary energy barrier, determined from the temperature dependence of the resistivity, is found to vary as the square of the C content in the n-type polycrystalline Si1−yCy and Si0.82−yGe0.18Cy layers, but linearly in the p-type Si1−yCy layers. The square law dependence seen in the n-type layers for C contents up to 0.9% is explained by an increase in the grain boundary trap density due to the presence of carbon, whereas the linear relationship seen in the p-type layers for C contents between 2% and 8% is explained by a shift in the grain boundary trap energy toward the valence band. Finally, lower values of grain boundary energy barrier are obtained in p-type Si0.82−yGe0.18Cy layers with a C content of 4% than in equivalent Si1−yCy layers, which could be explained by a larger shift in trap energy toward the valence band. © 2001 American Institute of Physics.
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  • 120
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6205-6209 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of planar δ-doping on effective parameters of Schottky diodes has been studied by simulations of I–V curves within a drift-diffusion approximation. It is shown that an inserted δ layer with the same type of conductivity as that of the base semiconductor material has no significant influence on the effective Schottky diode parameters. The change of the potential barrier shape with the insertion of the δ-doped layer with the same type of conductivity as the base semiconductor material influences the diode current only slightly. On the other hand, significant changes were found for the Schottky diodes with the opposite type of δ-doped layer conductivity compared to the base semiconductor. The resultant barriers and the ideality factors both increase with increasing distance of the δ-doped layer from the metal–semiconductor interface. © 2001 American Institute of Physics.
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  • 121
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6217-6221 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum nitride insulating layers have been grown at room temperature with a film resistivity of 3.3×1016 Ω cm on mercury cadmium telluride substrates. Insulator breakdown fields of 640 MV/m were reached. Capacitance–voltage measurements with Al/AlN/Hg0.76Cd0.24Te metalinsulator-semiconductor devices demonstrate band bending at the semiconductor surface indicating that damage to the substrate was minimized during film growth. A fixed interface charge density (given here as total charge per unit area divided by the electron charge=Qss/q) of +2×1011 cm−2 and a slow interface state density of 4×1010 cm−2 were measured. The procedures for achieving these high quality insulating layers are reported. Frequency dependent dielectric constant and dielectric loss tangent measurements, carried out at room temperature and 100 K, are also presented. © 2001 American Institute of Physics.
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  • 122
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6236-6242 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemistry and electronic structure of interfaces between Al and copper hexadecafluorophthalocyanine (F16CuPc) are studied via x-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy (UPS), and current–voltage measurements. Electron injection barriers measured by UPS are reported. Analysis of the Al–F16CuPc reaction shows the formation of a phase of three-dimensional (F16CuPc)3Al species. The reacted region is extended at the Al-on-F16CuPc interface and narrow at the F16CuPc-on-Al interface. A series of metal/F16CuPc/metal structures is fabricated to study the impact of the interface chemistry and deposition sequence on device performances. It is found that (F16CuPc)3Al forms a low conductivity region, which has considerable bearing on the electron current. The interface fabrication sequence, which defines the thickness of the reacted region, therefore has a profound impact on device performance. © 2001 American Institute of Physics.
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  • 123
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6255-6262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real (χac′) and imaginary (χac″) components of the ac magnetic susceptibility of the polycrystalline GdAl2, DyAl2, and ErAl2 have been measured as functions of temperature, ac and bias dc magnetic field amplitude, and ac magnetic field frequency. Both χac′ and χac″ of the ferromagnetic DyAl2 and ErAl2 are strongly dependent on the ac magnetic field parameters, especially when compared with those of the ferromagnetic GdAl2. The observed behavior of the ac magnetic susceptibility is determined mainly by the domain dynamics, rather than by a change of the exchange interactions below Curie temperature. © 2001 American Institute of Physics.
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  • 124
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6268-6274 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structured nanocomposite films consisting of five Fe layers embedded in an amorphous Al2O3 matrix (Fe:Al2O3) have been grown by sequential pulsed laser deposition. The formation of well isolated quasispherical nanocrystals is observed for samples with Fe content per layer close to 6.5×1015 atoms/cm2. Increasing the Fe content leads first to the formation of elongated nanocrystals and then to quasicontinuous layers. The evolution in the shape and size of the nanocrystals is reflected in the magnetic behavior of these systems. A crossover from a low temperature ferromagnetic regime to a high temperature superparamagnetic regime is observed at a temperature of 23 K in the samples containing isolated quasi-spherical nanocrystals. In this case, a reduced moment per Fe atom (1.4 μB/atom) with respect to the value for α-Fe (2.2 μB/atom) is estimated. This behavior is attributed to the presence of a Fe-oxide surface shell on the nanocrystals. The large values of the estimated effective magnetic anisotropy (1.4×106 J/m3) and the low temperature coercivity in these samples are attributed to a strong surface contribution to anisotropy, whereas the temperature dependence of coercivity is attributed to thermal activation. © 2001 American Institute of Physics.
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  • 125
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6297-6301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of Permalloy films, of various shapes such as a square, a rectangle, a circle, and a rhombus, was made. The sample length to width ratio L/w varied from 1 (i.e., square) to 29 (i.e., rectangle). We studied how the planar Hall effect (PHE) signal was affected by adding a transverse field Hy along the easy-axis direction of the sample. It was found that in a certain range of Hy, the PHE sensitivity S might become inoperative, i.e., S changed linearly as a function of Hy from −Smax to +Smax (or vice versa), where Smax was the maximum sensitivity. This phenomenon is explained by considering the Zeeman-energy and the single-domain-rotation effects. In particular, for the square sample, the following data exist: (1) Smax is as high as 310 Ω/T at the film thickness t=500 Å, and (2) the inoperative range for Hy is the narrowest among all the samples. From this study, we conclude that the field of the Earth He—as long as its horizontal component is larger than 0.25 Oe—can be employed to stabilize the magnetic structure of a Permalloy element and to achieve the best PHE performance with Smax. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6321-6326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transitions and structure of 7% La-modified Pb(Zr0.65Ti0.35)O3 (PLZT 7/65/35) at 40 K were investigated using high-resolution powder diffraction. The high-resolution data suggest the existence of an alternate phase, which is not expected from the widely accepted phase diagram. By structural analysis and Rietveld refinement, the space group of this phase was determined to be F1 (the standard setting is P1 by adding face-centered generators), rather than the expected R3c or the reported Cm phase. The unit cell of this phase is deduced by doubling the primitive cubic cell along three main axes, cell parameters area a=8.14546(13) Å, b=8.18539(15) Å, c=8.16785(11) Å, and interaxial angles are α=90.1925(24)°, β=89.8785(26)°, and γ=90.1564(34)°. The tilting system of oxygen octahedra is a¯b¯c¯ instead of a¯a¯a¯ in the R3c phase. The cation displacements and polarization are described in detail. The polarization direction was found to be along 〈112〉, not the main axes. The phase relationship and domain morphology are discussed in light of this triclinic phase, suggesting that this phase is important to understand the complex phase transitions and domain morphology in this series of materials. The experimental results suggest that this triclinic phase may extend to other compositions and temperature range. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6345-6356 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Ginzburg–Landau type theory of interaction of randomly distributed local dipoles in a paraelectric crystal is developed. The interaction is caused by the polarization of the host lattice generated by these dipoles. The obtained effective Hamiltonian of the dipole–dipole interaction is employed for the Monte Carlo simulation of ferroelectric properties of a system with off-center dopant ions producing local dipoles. The computer simulation shows that at low dopant ion concentration the paraelectric state transforms into a macroscopically paraelectric state consisting of randomly oriented polar clusters. These clusters amplify the effective dipole moment and dramatically increase the dielectric constant. The interaction between the clusters results in a spectrum of relaxation time and transition to the relaxor state. The real and imaginary parts of the susceptibility of this state are calculated. At intermediate dopant concentration, the material undergoes a diffuse phase transition into a ferroelectric state smeared within a temperature range. A further increase in the dopant concentration makes the transition sharper and closer to the conventional ferroelectric transition. The results obtained are compared with the behavior of the K1−xLixTaO3 relaxor ferroelectric. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1869-1878 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free electron density and low field electron mobility of 4H–SiC in the temperature range of 35–900 K are examined experimentally and theoretically. Five samples produced by cold-wall atmospheric pressure chemical vapor deposition and doped with nitrogen from 3.5×1015 cm−3 to 7.5×1017 cm−3 are investigated using the electric conductivity and Hall measurements. A complete description of the electron density and mobility is presented taking into account inequivalent positions of cubic and hexagonal donor sites as well as valley-orbit splittings of the donor levels. A good agreement between experiment and theory is achieved for all samples and it is demonstrated that the scattering of electrons by neutral donors is a dominant mode in 4H–SiC at low temperatures. The deformation potential for the intravalley scattering by acoustic phonons and coupling constants for the intervalley scattering by acoustic and optic phonons are determined. The dependence of electron mobility on doping at constant temperatures 77 K, 292 K, and 600 K is experimentally established and successfully described. Parallel conductivity at low temperatures by an impurity band in the sample with 7.5×1017 cm−3 donors is evidenced. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6397-6401 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sm–Co particles have been produced in a W matrix by annealing sputtered Sm–Co/W multilayers with layer thicknesses of 5–28 nm at temperatures of 600–850 °C. The Sm–Co particles had the intermetallic 1:7 and 2:17 structures with sizes below 10 nm and coercivities in the range of 2–10 kOe. A reduction of magnetization with prolonged annealing has been observed and attributed to alloying of Co with both W and Si by interdiffusion through the W layer. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6421-6427 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent contactless electroreflectance (CER) and photoluminescence (PL) measurements in the range of 30 K〈T〈300 K on two GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with different well widths fabricated by molecular-beam epitaxy on (100) GaAs substrates are presented. For the CER measurement, the 11H transition is completely screened out by the two-dimensional electron gas and the prominent feature related to the Fermi energy edge singularity transition showed a Stokes shift to higher energy with respect to the 21H transition of the PL measurements at low temperature. From the Stokes shifts, the Fermi energy level of the system is evaluated, and hence, the density of the two-dimensional electron gas. The temperature-dependent PL measurements revealed two features, identified to be the 11H and 21H transitions. The relative intensities of the 11H and 21H transitions were analyzed taking into account the effect of the subband filling and the wave-function overlap factors. A good agreement is found between experimental data and theoretical calculation results. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 533-537 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to evaluate the large third-order optical nonlinearity of materials accurately, the influence of the irradiance (I0) and sample thickness (L) on the Z-scan transmittance of PbO-containing glass as a representative material was investigated using simple and conventional Z-scan experiments and analyses. The transmittance difference between the peak and valley (ΔTp–v) in the Z-scan curve resulting from nonlinear refraction and the difference between the baseline (1.0) and valley (ΔT1−v) due to nonlinear absorption deviated from a linear relationship at increased I0 and L. It was found that an analysis based on the linear relationship at large I0 and L underestimated the third-order optical nonlinearity due to saturation. Taking into consideration the saturation of ΔTp−v and ΔT1−v with L under moderate irradiance, the intrinsic nonlinear refractive index (γ) and nonlinear absorption coefficient (β) of the present glass were calculated to be 1.58×10−17 m2 W−1 and 7.75 cm GW−1, respectively. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1911-1919 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates the H2-anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (∼1012 cm−2) of fixed and mobile positive charges are generated at 450 °C. Properties (reactivity, electrical and thermal stability) of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H2-anneal induced positive species and the hydrogenous species released by irradiation or electrical stresses. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1903-1910 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined the orbital lineup of the tris (8-hydroxyquinolinato) gallium (Gaq3)/Mg interface using combined x-ray and ultraviolet photoemission spectroscopy (XPS and UPS) measurements. The Gaq3/Mg system is a prototypical model structure for organic electron/low work function electrode transporting materials interfaces found in organic light emitting diodes (OLED). A Gaq3 thin film was grown in 15 steps on a previously sputter-cleaned Mg substrate starting at a 1 Å nominal thickness up to a final thickness of 512 Å. Before, and in between the growth steps, the sample surface was characterized by XPS and UPS. The results indicate the formation of a reaction layer of about 12 Å thickness at the Mg interface, which resulted in a 0.96 V interface dipole potential. At Gaq3 coverages higher than 256 Å, a strong charging shift occurred in the overlayer related UPS-emission lines, which was identified by measuring the high binding energy cutoff (secondary edge) of both the XP and UP spectra. The several magnitudes different x-ray and ultraviolet source photon intensities allow pinpointing charging shifts with high sensitivity. Due to the low work function of the reacted interface layer, the Gaq3 electronic states are aligned at a binding energy below the substrate Fermi edge that exceeds the magnitude of the optical gap between the highest occupied and lowest unoccupied molecular orbitals (HOMO and LUMO). This allowed the conclusion that the ground state exciton binding energy of Gaq3 needs to be larger than 0.43 eV. Based on these considerations, the lowest possible electron injection barrier matching the experimental data was estimated to be 0.15 eV. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1924-1930 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy studies have been carried out on partially disproportionated NdFeB-type alloys. A new intermediate magnetic (NIM) phase has been identified. Moreover, the lamella structure which subsequently develops from the tetragonal NIM phase comprises a tetragonal NdFe-containing (IL) phase and α-Fe. The experimental data show strong evidence of a well-defined crystallographic relation between both the NIM and lamella phases and between the IL phase and α-Fe. These observations give insight into how crystallographic texture, and hence anisotropy, can be developed in NdFeB-type powders processed by the hydrogenation, disproportionation, desorption, and recombination route. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1931-1933 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compound Nd5Co21B4 belonging to the series Rm+nCo5m+3nB2n with m=3, n=2 has been synthesized by melt spinning. The crystal structure and magnetic properties of the compound have been studied by means of x-ray diffraction and magnetic measurements. The compound crystallizes in a hexagonal structure with space group P6/mmm. The Curie temperature, the saturation moment, and the planar anisotropy field of the compound are 570 K, 31.1 μB/f.u., and 861 kOe, respectively. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1934-1940 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous thin films of DyxFe100−x and Dy20Fe80−yCoy, with various x and y values and of ∼40 nm thickness, have been prepared by sputtering on polyimide films. Their magnetization curves and the Mössbauer spectra indicate that at 295 K the iron moments are preferentially oriented parallel to the film in Dy2Fe98 and that Dy6Fe94 is paramagnetic. The DyxFe100−x thin films, where x is 17, 20, 24, 29, 32, 35, and 37, show perpendicular magnetic anisotropies and moderate coercive fields of at most 150 kA/m, whereas the Dy20Fe80−yCoy thin films, where y is 8, 13, 16, and 20, thin films show stronger perpendicular anisotropies and larger coercive fields of ∼400 kA/m. The introduction of cobalt into the amorphous thin films increases their coercive field and the perpendicular magnetic anisotropy. The Mössbauer spectra of the DyxFe100−x and Dy20Fe80−yCoy amorphous thin films consist of broadened sextets which have been analyzed with a distribution of hyperfine fields by assuming that the iron moments are oriented perpendicular to the plane of the film. Detailed fits of the Mössbauer spectrum of Dy20Fe80 indicate that the cone angle of the iron magnetic moments cannot be determined with accuracy. The average hyperfine fields in the DyxFe100−x amorphous thin films are smaller than those in the crystalline dysprosium–iron intermetallic compounds. The average hyperfine field increases from ∼140 kOe in the DyxFe100−x films to ∼220 kOe in the Dy20Fe80−yCoy films, an increase which is in agreement with the increase in the saturation magnetization. The x dependence of the isomer shift indicates that there is strong dysprosium–iron bonding, whereas the y dependence of the isomer shift reveals an enhancement of the d-electron localization. From earlier x-ray magnetic circular dichroism results and the Mössbauer spectral results presented herein, iron magnetic moments of 0.87 or 0.67 μB, corresponding to 2.9 or 2.8 holes in the iron 3d band, have been obtained for the DyxFe100−x amorphous thin films with x greater or smaller than 27, respectively. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1962-1967 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C–V characteristics, P–E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x–y alignment and the interface between electrode and PZT in MFM capacitors. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1950-1954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly anisotropic ferroelectric domain structure is observed in KTiOPO4 (KTP) crystals reversed by low electric field. The applied Miller–Weinreich model for sidewise motion of domain walls indicates that this anisotropy results from the peculiarities of KTP crystal lattice. The domain nuclei of dozen nanometer size, imaged by atomic force microscopy method, demonstrate regular hexagonal forms. The orientation of domain walls of the elementary nuclei coincides with the orientation of the facets of macroscopic KTP crystals. The observed strong domain elongation along one principal crystal axis allows us to improve tailoring of ferroelectric domain engineered structures for nonlinear optical converters. © 2001 American Institute of Physics.
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  • 139
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    Notes: Self-assembled hexanedithiol (HDT) and aminoethanethiol (AET) monolayers (SAMs), ∼0.4–0.8 nm in thickness, are used to link ∼5 nm diam CdS nanoparticles covalently and electrostatically onto Au and Ag substrates. The resulting nanostructures are probed with scanning electron microscopy (SEM) and surface plasmon resonance (SPR) measurements. The CdS nanoparticle–SAM–substrate interactions manifesting themselves in the dielectric functions of the multilayered systems, are detected in the SPR data, and are discussed in terms of a phenomenological six-layer model. The SPR response of the Ag substrate is more sensitive to neighboring interactions than the Au substrate. The SEM images show that the CdS, connected either by HDT or AET onto Ag substrates, forms crystalline structures. The interactions responsible for this crystallization are absent in samples employing Au substrates, in which case only ∼5 nm diam CdS nanoparticles are detected by SEM. The experimental results of the present article, analyzed in detail using Fresnel and Maxwell equations, demonstrate how the SPR technique can be used to characterize layered nanostructured materials. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1545-1549 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two desorption peaks of hydrogen molecule (mass number=2), starting at about 600 and 950 K, respectively, are observed in thermal desorption mass spectroscopy of nanostructured graphite mechanically milled for 80 h under hydrogen atmosphere. It follows from a combined analysis of thermal desorption mass spectroscopy and thermogravimetry, that ∼6 mass % of hydrogen (corresponding to 80% of the total amount of hydrogen) is desorbed at the first desorption peak as a mixture of pure hydrogen and hydrocarbons. Below the temperature of the second desorption peak, at which recrystallization related desorption occurs, nanostructured graphite is expected to retain its specific defective structures mainly with carbon dangling bonds as suitable trapping sites for hydrogen storage. The formation process of the nanostructures during milling under hydrogen atmosphere is also discussed on the basis of the profile of Raman spectroscopy. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1550-1557 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complete Raman spectrum of SnO2 nanoparticles in presented and analyzed. In addition to the "classical" modes observed in the rutile structure, two other regions shown Raman activity for nanoparticles. The Raman bands in the low-frequency region are attributed to acoustic modes associated with the vibration of the individual nanoparticle as a whole. The high-frequency region is activated by surface disorder. A detailed analysis of these regions and the changes in the normal modes of SnO2 are presented as a function nanoparticle size. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1558-1563 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cr-substituted Finemet-type nanocrystalline alloy (Fe63.5Cr10Si13.5B9Cu1Nb3) has been studied by differential scanning calorimetry, x-ray diffraction, Mössbauer spectroscopy, and magnetic measurements. The Curie temperature of the remaining amorphous phase decreases as the crystalline volume fraction increases, reaching values below room temperature. This feature makes the alloy adequate for studying the magnetic decoupling of the (Fe,Si) nanocrystals at moderated temperatures and, in particular, the superparamagnetic relaxation in broad temperature and crystalline fraction ranges. It was shown that the anomalous dependence of the coercive field on the annealing temperature can be satisfactorily explained assuming a dipolar-type interaction between the crystallites. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1564-1572 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive picture of void dynamics in connection with the critical morphological evolution has been developed in order to understand the conditions under which premature failure of metallic thin interconnects occurs. Our mathematical model on the mass flow and accumulation on void surfaces, under the action of applied electrostatic and elastostatic force fields, and capillary effects, follows an irreversible but discrete thermodynamic formulation of interphases and surfaces. This formalism also takes into account in a natural way the mass transfer process (the void growth), between bulk phase and the void region in multi-component systems, in terms of the normalized local values of Gibbs free energy of transformation with respect to the specific surface Gibbs free energy, in addition to the contribution due to local curvature of the advancing reaction front, rather rigorously. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1582-1588 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comparative analysis of the current spectral densities in a Si bipolar junction transistor (BJT) and a SiGe heterojunction bipolar transistor (HBT) of identical geometry performed by means of an ensemble Monte Carlo simulator self consistently coupled with a two-dimensional Poisson solver. We focus on the physical origin of the different noise sources in the transistors at rf when varying the injection level conditions. At low injection the spectral density of base current fluctuations, SJB(0), is governed by thermal noise related to the base resistance, while the collector spectral density, SJC(0), reaches a typical shot noise response. At high current density the onset of high injection in the base and the base push-out play an important role in the noise behavior of both transistors. Thus, SJC(0) deviates from the typical shot noise response. Hot carrier effects are also present. In the HBT, these effects are less important than in the BJT due to the SiGe/Si heterointerface, and SJB(0) can be neglected in the overall noise analysis because of the Ge content benefits when the structure enters the high-injection regime. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1589-1599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-area two-color image sensor array made with amorphous silicon (a-Si:H) technology is described. Mesa-isolated double-junction p-i-n-i-p a-Si:H sensors discriminate the two spectral bands—blue/green and red—according to the polarity of the applied voltage bias. The 512×512 element active-matrix array with 75 μm pixel pitch is addressed using a-Si:H thin-film switching transistors. Under steady state illumination, the array exhibits a linear response, good color separation, and good spatial response as measured by the line-spread function, so that images obtained with the array are clear and sharp. The response to transient illumination exhibits image lag and a strong dependence of the signal on integration time, both of which depend on the bias polarity. Switching the bias voltage also induces strong transient properties. These effects are attributed to the back-to-back diodes, which act as capacitative dividers in the generation and readout of the signal. The transient effects compromise the practical application of the color sensors for video color imaging. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1600-1607 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article the ionization rate of phosphorus doped in poly-Si gate and band gap narrowing caused by carrier–carrier interactions and carrier–ion interactions are self-consistently calculated by using a simple algorithm that is formulated phenomenologically. As a result, the ionization rate is found to be unity when the phosphorus concentration is less than 3×1019 cm−3, and becomes lower rapidly with the increase of the concentration larger than 3×1019 cm−3. Using this result, in a wide oxide voltage region, we can reproduce the oxide voltage dependence of the measured tunneling current from the gate in various samples (tOX=2.1, 2.8, and 3.4 nm) with the same tunneling mass (mOX=0.42m0), where m0 is the free electron mass. In particular, we show why the incomplete ionization can reproduce the tunneling current from the gate even in a lower oxide voltage region where the complete ionization cannot do so. Furthermore, a local band gap narrowing, which is described by an additional band gap narrowing due to exchange–correlation interactions of carriers induced by a local potential, is included in the present calculation. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1422-1428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a study of thin (500–4000 Å) and ultrathin (100–500 Å) yttrium–iron–garnet (YIG) films deposited onto amorphous quartz substrates by the pulsed laser deposition technique. The growth conditions of well-formed polycrystalline films have been determined. The crystalline structure and the magnetic behavior of the films are strongly influenced by the processes occurring on the film–substrate interface. Primarily, a strain due to the difference in thermal expansion coefficients of the film and substrate induces a uniaxial anisotropy. Another source of strain are lattice distortions due to oxygen vacancies. The results obtained from x-ray diffraction analysis, magneto-optical, superconducting quantum interference device, vibrating sample magnetometer, and ferromagnetic resonance (FMR) measurements indicate that films thicker than 200 Å can be approximated by a two-layer model. One of the layers with a highly distorted structure and low magnetization is located near the surface. The other one, the upper layer, can be estimated as an almost perfectly formed YIG. Their relative thickness determines the magnetic and FMR behavior of the samples. An equilibrium direction of the magnetization along the film normal has been found to occur in the ultrathin films with the lowest magnetization where the perpendicular anisotropy energy exceeds the dipolar energy. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5637-5641 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of nonalloyed ohmic contact structures consisting of Au/Ti metallization deposited on a thin (3.5–5 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a thin (10 nm) layer of heavily doped n-type GaAs is summarized. We demonstrate that this Au/Ti:LTG:GaAs/n+GaAs contact structure has a stable specific contact resistance between 40 and 300 K, with measured contact resistance as low as 2×10−6 Ω cm2 at 40 K. Based on comparisons of the measured data with calculations using a uniformly doped Schottky model, we infer that the activation doping density in these structures is higher than 5×1018 cm−3, and that the surface potential barrier height is lower than 0.7 eV (midgap). The characteristic current–voltage curves of the nonalloyed contact show that tunneling is the primary conduction mechanism. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6391-6396 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the contact mechanics of a probe tip interacting with a quartz crystal microbalance (QCM) has been performed, involving simultaneous measurements of normal load, displacement, and contact stiffness with changes in QCM resonant frequency. For metal–metal and glass–metal contacts in air, the QCM frequency shifts were observed to be positive, and directly proportional to the contact area as inferred from the contact stiffness. Interfacial characteristics of the probe–tip contact (elasticity, contact size, and an estimate of the number of contacting asperities) were deduced by extending a prior model of single asperity contact to the case of multiple contacts. The extended model clarifies a number of seemingly disparate experimental results that have been reported in the literature. © 2001 American Institute of Physics.
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  • 150
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    Journal of Applied Physics 90 (2001), S. 6409-6415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of C54 TiSi2 using Ti–Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Alloys with Nb contents ranging from 0 to 13.6 at. % were used. The formation temperature of C54 TiSi2 was reduced in the presence of Nb. However, the addition of Nb in Ti did not cause fundamental changes in the evolution of resistance versus temperature. This latter observation suggests that the mechanism for the formation of C54 TiSi2 remained the same in spite of the enhancement effect. For alloys with up to 8 at. % of Nb, the C49 TiSi2 phase formed first, as with pure Ti. When annealing the alloy with 13.6 at. % Nb, neither C49 TiSi2 nor C54 were found in the usual temperature ranges, instead, C40 (Nb,Ti)Si2 was observed. This phase transformed to C54 (Nb,Ti)Si2 above 950 °C. The apparent activation energy associated with the formation of C54 TiSi2 was obtained by annealing the samples at four different ramp rates from 3 to 27 K/s; it decreased continuously from 3.8 to 2.5 eV with increasing Nb content from 0 to 8 at. %. The apparent activation energy for the formation of C40 (Nb,Ti)Si2 was found to be 2.6 eV. The possible physical meaning, or lack thereof, of the high activation energies derived from experimental measurements is extensively discussed. A qualitative model is proposed whereby nucleation would be rate controlling in pure TiSi2, and interface motion in samples with 8 at. % Nb. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1455-1458 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical quality factor of Pb(Mg1/3Nb2/3)O3–PbTiO3(PMN–PT) and Pb(Sc1/2Nb1/2)O3–PbTiO3(PSN–PT) ceramics have been investigated for compositions close to the morphotropic phase boundary. Investigations were performed for various types of lower valent substituents on the B-site cation. These investigations have shown significant differences between the modified PMN–PT and PSN–PT crystalline solutions. In PMN–PT, lower valent substitutents had little effect upon the mechanical quality factor; however in PSN–PT it was found to be significantly increased. A crystal chemical approach is then used to explain these differences. © 2001 American Institute of Physics.
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  • 152
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    Journal of Applied Physics 90 (2001), S. 1459-1468 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaTiO3 (CT) and CaAl1/2Nb1/2O3 (CAN) have similar structures but very different dielectric properties. For CT at room temperature, the relative permittivity κ(approximate)170 and the temperature coefficient of resonance frequency τf(approximate)900×10−6 K−1, but for CAN, κ(approximate)27 and τf(approximate)−88×10−6 K−1. I use first-principles density functional theory calculations to investigate the origin of the contrasting behaviors. I find important differences between the two systems in both the frequencies and the eigenvectors of the low-frequency polar phonons. In CT, the frequencies are lower and the perovskite B site cations move against the surrounding oxygen octahedra; whereas in CAN, the frequencies are higher and the B site cations move with the oxygen octahedra. These two factors are equally important in explaining the differences in κ. I introduce and solve a decoupled quantum oscillator model for the temperature-dependent permittivity. This model predicts a large positive τf for CT and a small τf for CAN, in qualitative agreement with experiment. I relate the different dielectric behaviors to differences in the electronic structures. © 2001 American Institute of Physics.
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  • 153
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    Journal of Applied Physics 90 (2001), S. 1469-1479 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonance method for measuring the complex elastic and electromechanical properties of piezoelectric materials under high-power operational conditions has been developed. In this method, rectangular specimens are piezoelectrically driven into mechanical resonance. The displacement of the transverse resonance mode is measured as a function of frequency (f ) using an optical vibrometer method in conjunction with a frequency response analyzer. Due to the wide amplitude sensitivity range of the detection system, asymmetries in nonlinear resonance curves with mechanical damping can be accurately measured. The method has been applied to the study of Pb(Zr1−xTix)O3. Under resonant high-power drive, it has been found that electromechanical nonlinearities are due to elastic ones, as the elastic and electromechanical properties were both found to scale with the square of the strain amplitude. The temperature (T) and ac electric field (Eac) dependence of the mechanical quality factor Qm were also determined. Iso-Qm curves were constructed that can be used to predict performance criteria for high-power applications of piezoelectric materials. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1489-1495 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a photographic method to view the inversion of ferroelectric domains during the periodic electric field poling of KTiOPO4 by taking advantage of the electro-optic effect and a high speed charge coupled device (CCD) camera. The method is noninvasive and allows monitoring in situ and in real time. The high speed CCD camera opens up the possibility to observe the dynamics of the domains during poling and to probe the samples afterwards to evaluate the grating formed in the material. This monitoring method should be applicable to other ferroelectric crystals, as well. © 2001 American Institute of Physics.
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  • 155
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    Journal of Applied Physics 90 (2001), S. 5713-5720 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric and ferroelectric properties in systems of permanent and induced dipoles are calculated with a Monte Carlo method, the importance-sampling method. The systems are dipole chains and dipole planes, which can be looked at as subsystems of a perovskite structure. Depending on the system and the parameters we find spontaneous polarizations, ferroelectric domains, temperature-dependent hysteresis loops of the polarization, and a Curie–Weiss law for the susceptibility. These properties are mainly due to the cooperation of induced and permanent dipoles. The most difficult problem is the calculation of the spontaneous polarization, i.e., the calculation of the polarization without an applied field. In this case, a high iteration number is required. © 2001 American Institute of Physics.
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  • 156
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    Journal of Applied Physics 90 (2001), S. 1480-1488 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric thin films of barium titanate were fabricated by sol–gel technique on platinum substrates. The processing temperature was 700 °C. The films obtained with a thickness of 1.5 μm were dense, transparent, and showed ferroelectricity. Scanning electron microscopy and x-ray diffraction were used for studying the surface morphology and crystallographic structure of the film. Films in the metal–ferroelectric–metal configuration (MFM) were used for the electrical measurements. Dielectric constant and loss tangent were found to be 430 and 0.015, respectively, at 10 kHz under ambient conditions. The ε′(T) curve shows broad peak centered around 120 °C as in the case of diffuse phase transition. The ac conductivity is proportional to ω0.9 in the low frequency region and ω1.8 in the high frequency region. The dc conductivity versus temperature curve showed a change in the slope around 125 °C, corresponding to the phase transition. To study the low temperature phase transitions, dielectric parameters on the films were measured to a temperature down to about 10 K. Remanent polarization (Pr) and coercive field (Ec) obtained from the hysteresis loop at room temperature are ∼2.0 μC/cm2 and ∼27 kV/cm, respectively. Capacitance–voltage studies performed on the MFM structures showed butterfly loop at 135 °C. © 2001 American Institute of Physics.
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  • 157
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    Journal of Applied Physics 90 (2001), S. 1509-1515 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr, Ti)O3 (PZT) thin films with (100) preferred orientation were prepared using metalorganic chemical vapor deposition on LaNiO3 (LNO) buffered platinized Si with thickness varying from 25–100 nm. The dependence of electrical properties of PZT films on thickness was studied using several techniques, including polarization–electric field (P–E), temperature variable current–voltage (I–V), and capacitance–voltage (C–V) measurements. Because of the formation of Schottky barriers at ferroelectric/electrode interfaces, built-in electric fields are present. A progressive increment in carrier concentration and interfacial built-in electric field versus reducing PZT film thickness was observed, which is believed to be a dominant factor controlling the measured dielectric/ferroelectric properties. The higher built-in electric field in thinner PZT films would pin the dipoles at the interfacial region and retard the response of dipoles to the external electric field. © 2001 American Institute of Physics.
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  • 158
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    Journal of Applied Physics 90 (2001), S. 1501-1508 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ta2O5 films were deposited by low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) at temperatures below 450 °C. These films were used to fabricate metal–oxide–metal (MOM) structures with titanium nitride (TiN) electrodes. The electrical properties of the MOM capacitance were investigated by the means of current–voltage and capacitance–voltage characteristics in the 100 Hz–1 MHz frequency range. It is shown that the conduction mechanism changed from Schottky emission, for the LPCVD material, to Poole–Frenkel current for the PECVD material. The roughness of the bottom electrode, as determined by atomic force microscopy measurements, is found to impact the leakage current. For the LPCVD material the capacitance exhibits a strong dependency on the applied bias and the frequency. For the PECVD material, only a small variation of the capacitance is observed when the bias is increased, with almost no frequency dependency. A clear correlation between the capacitance variation and the current density is demonstrated. As far as the current density is lower than 0.1 A/cm2, the capacitance is almost constant. For a higher current density the capacitance increases exponentially. Transmission electron microscope observations have shown that the Ta2O5 films are homogeneous in-depth. Consequently, the capacitance variations could not be explained by interfacial polarization (Maxwell–Wagner mechanism). We suggest a model that well explains the observed capacitance variations. This model is based on the relaxation of the free carriers and the nonlinear Kerr effect (dipolar relaxation). A good fit of the experimental results is obtained by summing both contributions (free carrier relaxation and Kerr effect). For the LPCVD material, the carrier relaxation is found to be the predominant process. For the PECVD material, which exhibits lower leakage current than the LPCVD material, the Kerr effect is the predominant mechanism. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1516-1520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photorefractive properties of nominally pure near-stoichiometric LiNbO3 crystals grown from congruent melts containing 11 mol % K2O are studied, and some photorefractive properties which are very different from those in congruent LiNbO3 crystals are observed. Large stationary energy transfer (Γmax=25 cm−1) exists in near-stoichiometric crystals though the photovoltaic field is dominant. The light-induced scattering fanning is markedly asymmetric in the crystals, which is very different from the symmetric fanning observed in congruent ones. Our analysis shows that these differences are caused by the large photovoltaic field and the relatively small density of filled traps in as-grown near-stoichiometric LiNbO3. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 1011-1016 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Coulomb interaction of a dielectric probe tip with a uniform field existing above a semi-infinite, homogeneous dielectric substrate is studied. The induced polarization surface charge density and the field distribution at the bounding surface of the dielectric medium with the geometry of half of a two sheeted hyperboloid of revolution located above the dielectric half space interfaced with a uniform surface charge density is calculated. The force density on the hyperboloidal probe medium is calculated as a function of the probe tip shape. The calculation is based on solving Laplace's equation and employing a newly derived integral expansion for the vanishing dielectric limit of the potential. The involved numerical simulations comprise the evaluation of infinite double integrals involving conical functions. © 2001 American Institute of Physics.
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  • 161
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    Journal of Applied Physics 90 (2001), S. 5866-5870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonlinearly optical method to induce the birefringence in azo liquid crystal polymers by the optical–optical isomerization cycle (O–O cycle) process is proposed in theory and implemented by experiments. In the O–O cycle, the two isomerization steps of trans-cis and cis-trans are both induced by light. In the nonlinearly O–O cycle, at least one step involves the nonlinearly optical absorption. It has been demonstrated that the permanent birefringence was induced in azo polymer P–CN films with a visible light source at 532 nm wavelength by the nonlinearly O–O cycle. The nonlinear nature of the photoisomerization process in P–CN was verified and a high nonlinear absorption coefficient of 40 cm/W was measured by use of the Z-scan technique. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5884-5888 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the hydrodynamic model, we have derived a self-consistent model describing the dynamics of a collisional rf sheath driven by a sinusoidal current source. Numerical results have been obtained for the dependence of ion density, ion kinetic energy, sheath thickness, and sheath electric field, on the collision parameter and the current source parameter. © 2001 American Institute of Physics.
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  • 163
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    Journal of Applied Physics 90 (2001), S. 5550-5553 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er3+ and Yb3+ ions codoped calcium aluminum germanate glass has been synthesized by solid-state reaction. An intense infrared emission at 1534 nm, which corresponds to the minimum losses of silica based fibers used in optical communications, and visible emissions at 416, 490, 525, 548, and 660 nm, corresponding to the 4I13/2→4I15/2, 2H9/2→4I15/2, 4F7/2→4I15/2, 2H11/2→4I15/2, 4S3/2→4I15/2, and 4F9/2→4I15/2 transitions of Er3+ ions, respectively, were simultaneously observed in this glass under the excitation of a 978 nm diode laser at room temperature. These emissions are mainly attributed to energy transfer from Yb3+ ions to Er3+ ions. The up-conversion processes involve a sequential two-photon absorption for the red (660 nm), the green emissions (525 and 548 nm) and the blue emission (490 nm), and a sequential three-photon absorption for the violet-bluish emission (416 nm). The up-conversion fluorescence of Ca3Al2Ge3O12:Er,Yb glass can be used to detect 980 nm infrared laser light. © 2001 American Institute of Physics.
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  • 164
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    Journal of Applied Physics 90 (2001), S. 5564-5569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er3+–Y3+ codoped TiO2 films were prepared on a fused silica substrate by the sol–gel process. The effect of Y3+ codoping on the ∼1.54 μm photoluminescence (PL) properties of Er3+-doped TiO2 films are investigated. Enhancement of PL properties due to Y3+ codoping by a factor of 10 for intensity and of 1.5 for the full width at half maximum in comparison with the Er3+–Al3+ codoped SiO2 system has been observed in the film annealed at Er3+:Y3+:Ti4+=5:30(∼50):100. Extended x-ray absorption fine structure measurements show that the local chemical environment of Er3+ ions in the Er3+–Y3+ codoped TiO2 films is similar to that in Er2O3. The average spatial distance between Er3+ ions is enlarged due to the partial substitution of Y3+ for Er3+ ions in the Er2O3-like local structure. It is believed that the more intense PL emission of the Er3+–Y3+ codoped TiO2 films can be attributed to the better dispersion and distorted local structure of Er3+ ions in the TiO2 host matrix by yttrium codoping. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5585-5590 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structure calculations of BiB3O6 crystal from first principles are performed based on a plane-wave pseudopotential method. The linear refractive indices and the static second-harmonic generation (SHG) coefficients are also calculated by the SHG formula improved by our group. The calculated values are in good agreement with the experimental values. A real-space atom-cutting method is adopted to analyze the respective contributions of the cation and anionic groups to the optical response. The results show that the contribution of the (BiO4)5− anionic group to the SHG coefficients is more pronounced than that of the (BO3)3− and (BO4)5− groups. © 2001 American Institute of Physics.
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  • 166
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    Journal of Applied Physics 90 (2001), S. 5591-5598 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag (200 nm)/Al (8 nm) bilayer structures on SiO2 substrates were annealed at temperatures ranging from 300 °C–700 °C and for 30 min in He–H, Ar, or NH3 ambient. Upon annealing, Al segregates to the surface where it reacts with residual oxygen to form an Al-oxide passivation layer. Rutherford backscattering spectrometry and Auger spectroscopy showed the formation of an AlxOy diffusion barrier at the Ag/SiO2 interface. Apart from the surface passivation that resulted from annealing, the Ag/Al/SiO2 in different ambients, the adhesion of Ag to SiO2 was also improved. A strong correlation between the resistivity and the residual Al in the Ag film was observed. Resistivity values equivalent to that of the as-deposited sample were obtained only for temperatures at 700 °C or above. Scanning electron microscopy (SEM) combined with energy dispersive spectroscopy was used to study the effect of the different ambients on the observed surface morphology. The SEM studies showed that the passivated surfaces were not uniform but have hillocks and holes randomly distributed. In contrast to Ag on SiO2, no agglomeration was observed in the Ag/Al/SiO2 system. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5606-5611 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of a nanopaddle oscillator is developed to determine the resonant frequency (or the modulus of elasticity by inference from a measurement of the resonant frequency). Also modeled is the nonlinear stiffness of the oscillator and its nonlinear response. The approach is based upon a modal expansion of the elastic deformation of the oscillator and a Lagrangian representation. A comparison with recent work by other investigators is made and it appears the present model may help resolve a question about the modulus of elasticity to be inferred from such models. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5612-5622 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion and reactions of hydrogen in GaN are described by applying differential equations for the concentration profiles of H species, charged dopants, and carriers with simultaneous solution of Poisson's equation. This approach dispenses with the simplifying assumptions of local equilibrium among states and local charge neutrality that were employed previously by us to treat high-temperature H behavior in uniform layers. The result is a more general modeling capability which encompasses nonequilibrium conditions and space-charge effects such as are encountered in devices. Density-functional theory, previously used by us to treat equilibrium H energies, is employed herein to examine activation barriers and wave-function overlaps affecting the rates of relevant H and carrier reactions, thereby guiding the selection of mechanisms to be included and influencing the evaluation of some rate parameters. The model is applied to H-containing p-n junctions, with detailed consideration of the reversible, metastable electrical activation of H-passivated Mg acceptors that has been observed experimentally under forward bias. The calculations point to interstitial H2 as the state of the H resulting from such activation, and this conclusion is supported by good agreement between the predicted and observed onset temperatures for repassivation under open-circuit annealing. In modeling the more complex activation process, experimentally observed qualitative features are reproduced by choosing relative carrier-capture cross sections in accord with ab initio theoretical considerations. In other model calculations, H is shown to be expelled from the carrier-depleted zone of p-n junctions, causing H redistribution under reverse bias. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5632-5636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistivity of RMn12−xFex (R=Er,Ho) polycrystalline system with x=0, 4, 5, and 6 was measured over the temperature range of 4 to 300 K. The resistivity increases sharply near the Néel temperature TN for x=4, 5, and 6 which, according to existing theories, can be ascribed to the formation of superzone gaps. Then, the resistivity increase should be proportional to the staggered magnetization m′ below TN, whereas we find experimentally that it is quadratic in m′. Thermal smearing of the gaps can lead to such a dependence. There is no evidence for superzone effects in x=0 compounds. A combination of spin disorder, phonon, and impurity scattering gives a good account for the experimental data. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5652-5660 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS0.05Se0.95 nanocrystalline films were deposited onto fused silica and GaAs (100) substrates by the magnetron sputtering technique. The electrical conductivities of the films deposited onto fused silica substrates were measured in the temperature range of 180–300 K. It was observed that the low temperature conductivity could be explained by hopping of the charge carriers in the Coulomb gap while at elevated temperature Mott hopping is the predominant mode of conduction in these films. A distinct cross over from Efros–Shklovoskii to Mott hopping is observed for all the films. Optical spectra were found to be dominated by the combined effects of optical losses due to absorption and scattering. The absorption spectra indicated a blueshift, the extent of which depended on the crystallite size. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5647-5651 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: A graphite mask was used to realize selective doping of aluminum/boron in 4H–SiC by thermal diffusion at a temperature range of 1800–2100 °C. The doping profiles investigated by secondary ion mass spectrometry show that a high aluminum concentration of 5×1019 cm−3 near the surface and linearly graded boron profile up to several micrometers in depth can be obtained. Hall effect measurement was also employed to obtain the electrical characteristics of the diffused region, from which the carrier concentration (1×1019 cm−3) and hole mobility (7 cm2/V s) at room temperature were extracted. Room temperature photoluminescence indicates that the dominant luminescence is attributed to the donor acceptor pair recombination, in which boron D complex is the prevailing center rather than Al and boron shallow acceptors. Cathodoluminescence micrographs clearly illustrate a pattern with the locally diffused regions. To confirm the viability of the diffusion process, planar p-n diodes with a fairly low forward voltage drop (3.3 V at 100 A/cm2) and high reverse blocking capability (more than 1100 V) were fabricated. Built-in voltage of 2.9 V, which is typical for 4H–SiC p-n diodes, was obtained by capacitance–voltage measurement. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6061-6065 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of conducting polymers with Si atoms in main chains, such as optical absorption, photoluminescence (PL), and electroluminescence (EL), have been studied. The electronic energy structures have been determined by optical and electrochemical measurements. The strong PL with high quantum efficiency has been clarified, and spectral narrowing has been observed by pulse excitation of a nitrogen laser. Intense blue or red EL has also been demonstrated and the emission efficiency has been improved by anode surface modification and annealing. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6073-6083 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique is introduced which involves linearly modulating the power of the stimulation light while measuring the photoconductivity in Al2O3:C. This produces peaks in the measured photoconductivity instead of the typical exponential decay seen when using a constant power stimulation light. The technique, called linearly modulated photoconductivity (LM-PC), is the conductivity equivalent of linearly modulated optically stimulated luminescence (LM-OSL). Two peaks are seen in the LM-PC measurements that correspond to the same charge residing in the 450 and 600 K thermally stimulated conductivity peaks, respectively. Simultaneous measurements on both the LM-PC and LM-OSL reveal that the second peak in the LM-PC is not present in the LM-OSL. Deconvolutions are performed on the LM-OSL to determine the underlying components that make up the detected OSL emissions. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 6092-6097 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorescence of fac-AlQ3 (Q=8-quinolinolato), mer-AlQ3, mer-Al(mQ)3 (mQ=4-methyl-8-quinolinolato), and BeQ2 were investigated with electronic structure calculations. The molecular structure of the first singlet excited state (the emission state) was optimized with the ab initio "configuration interaction with single excitations" (CIS) method. Ab initio CIS and semiempirical "Zerner's intermediate neglect of differential overlap" (ZINDO) methods were used to calculate the emission energies (ΔE) and also the corresponding absorption energies. Although the ab initio CIS method overestimated the experimental value of ΔE by 1.09–1.16 eV, the ZINDO method reproduced it to a reasonable accuracy (within 0.26 eV). The optimized excited-state structure has an interesting feature in that one of the equivalent ligands distorts appreciably, while the thers keep their ground-state structures. As a result the highest occupied and the lowest unoccupied molecular orbitals (HOMO and LUMO) are localized on the distorted ligand. Since the excited state is characterized as the HOMO–LUMO transition, the emission from AlQ3 (and its analogues) directly reflects that of the ligand. In order to analyze this intrigung excited-state structure, exciton transfer theory was applied, where the exciton coupling between ligands and the structural relaxation of the ligand upon excitation were taken into account. By examining these two factors for BeQ2, it is shown that the exciton localization results from weak exciton coupling and/or large structural relaxation energy. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 4946-4950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of charge accumulation during bias sputtering of copper onto an insulating material are studied. To eliminate the effects of charge accumulation, we periodically apply a pulse bias to the electrode. Microstructure and electrical properties of the sputtered copper films grown on silicon dioxide are measured as a function of the pulse bias frequency. By comparing the observed properties of these films grown under a pulse bias to those grown under a dc bias (with a conducting path to the electrode), the effectiveness of the pulse bias in controlling the ion energy distribution is demonstrated. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 4951-4956 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of backscattered electrons on space-charge limited currents of cylindrical (coaxial) diodes with anode center conductors is studied. The scattered electrons are parametrized by a fractional current density α and fractional energy β of the incident electrons. For bipolar flow, current enhancement factors of 2.5 are calculated for α, β(similar, equals)0.5. Comparison of the model equations to one-dimensional particle-in-cell simulations with fully integrated Monte Carlo scattering algorithms demonstrates very good agreement for a range of energies and anode materials. In the absence of backscattering, the bipolar diode impedance decreases for increasing ratio of cathode to anode radius rc/ra for ratios greater than about 20. © 2001 American Institute of Physics.
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  • 177
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    Journal of Applied Physics 90 (2001), S. 4957-4965 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-dimensional radial slice of an Ar positive column discharge is simulated with a radiation transport coupled particle-in-cell model. The discharge is maintained by an axial current in the positive column which induces a self-consistent axial electric field. Power balance and radiation efficiency are investigated for variations of axial driving current Iz, gas pressure p, and radius R. The parameter regimes are from 0.1 to 1 cm for radius, 1 mTorr to 20 Torr for gas pressure, from 4 to 14 eV for electron temperature, from 1015 to 1017 m−3 for peak plasma density, and from 0.15 to 50 mA for axial current. The radiation efficiency is related to the product of the pressure and the radius, pR; it is restricted by the large wall loss for small pR and by the collisional quenching of the radiative state for large pR. The optimal value is about pR=1 Torr cm for this parameter regime. © 2001 American Institute of Physics.
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  • 178
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    Journal of Applied Physics 90 (2001), S. 4966-4972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an analytical study on hot gas exhaust process of a SF6 gas circuit breaker (GCB), after current interruption. The behavior of the hot gas has been studied based on measured gas temperature and simulation results of gas composition. We also propose a mechanism of interaction between the hot gas and pressure waves, which causes a self-blocking of the exhaust gas. During the heavy current interruption, the flow model suggests that the dielectric strength of the hot gas is affected by the pressure waves that are generated by the hot gas exhaustion. We believe that the results reported in this article provide guidance for the optimum structure of the exhaust chamber for small size GCB, operating at very high interrupting current. © 2001 American Institute of Physics.
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  • 179
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    Journal of Applied Physics 90 (2001), S. 4973-4976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence (PL) band, the M band, was observed in photoluminescence spectra for various excitation densities in high-quality ZnO epitaxial thin films. The M band intensity increased superlinearly with an increase in the excitation intensity, suggesting that the observed PL band is due to a biexciton state. In order to prove this, the photoluminescence excitation (PLE) spectrum of the M band and time dependence of the PL intensity were measured. A shoulder that originates from two-photon absorption of the biexciton state appeared in the PLE spectrum. The biexciton binding energy was estimated to be 15 meV. The temporal behavior of the PL intensities of the M and free-exciton bands can be explained by modified rate equations assuming that the M band is caused by radiative annihilation of a biexciton leaving a free exciton and that the rate of creation of biexcitons is proportional to the 1.5th power of the exciton density. This power dependence is consistent with experimental results showing that the M band intensity is proportional to the 1.5th power of the excitation density. © 2001 American Institute of Physics.
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  • 180
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    Journal of Applied Physics 90 (2001), S. 4977-4980 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (GaAs)1−x(Si2)x metastable alloys grown on (001), (110), (112), and (111) GaAs substrates, with Si fractions in the range 0≤x≤0.43, were studied by Raman scattering. Two modes near the LO and TO modes of GaAs, besides two local modes associated either with Si–As or Si–Ga and Si–Si bonds, are observed in the Raman spectra. The ratio of integrated intensities of TO-like and LO-like modes (ITO/ILO) is used to evaluate the short range order. It is observed that the zinc blende to diamond transition reported in the literature for these alloys does not influence the Si fraction dependence of the short range order. © 2001 American Institute of Physics.
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  • 181
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    Journal of Applied Physics 90 (2001), S. 4981-4989 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model for the calculation of homoepitaxial film growth rates during silicon deposition on Si(100)-2×1 from disilane. Central to this model is the use of thermalized gaseous disilane adsorption probabilities that have been determined as a function of gas and surface temperature by convoluting supersonic molecular beam adsorption probability data with a Maxwell–Boltzmann distribution of incident kinetic energies and angles. These calculations show that the primary adsorption pathway over the entire range of conditions investigated is the so-called trapping-mediated mechanism, in which dissociative chemisorption occurs via a physisorbed intermediate. A second adsorption mechanism, direct chemisorption, is activated by translational energy and does in fact contribute somewhat to adsorption, but only at high gas and surface temperatures. Hydrogen coverages and silicon film growth rates are calculated from a simple surface decomposition kinetic model together with a phenomenological thermal desorption model and compare favorably to experimental measurements. Under conditions of high flux or low surface temperature, the growth rate is limited by hydrogen desorption and therefore increases with increasing surface temperature. In the flux-limited or adsorption-limited growth regime, the growth rate is predicted to decrease with increasing surface temperature due to a drop in the adsorption probability, resulting in a maximum in the growth rate for a given set of deposition conditions. © 2001 American Institute of Physics.
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  • 182
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    Journal of Applied Physics 90 (2001), S. 4997-5001 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic and laser properties have been characterized for Nd3+ in LaSc3(BO3)4. The Judd–Ofelt analysis has been applied to the measured room temperature absorption spectrum to determine the radiative decay rates and branching ratios of Nd3+ transitions from the 4F3/2 metastable state to the 4IJ lower-lying manifolds. The parameters Ω2, Ω4, and Ω6 are larger than those reported for Nd3+ in other laser host crystals. The value of Ω4/Ω6 is approximately 3.0 times larger than that of Nd3+ in yttrium–aluminum–garnet (YAG) and about 1.4 times larger than that of Nd3+ in the β phase of LaSc3(BO3) reported recently. The measured room temperature fluorescence lifetime of the 4F3/2→4I11/2 transition is 150 μs, while the Judd–Ofelt analysis predicts a radiative lifetime for the 4F3/2 state to be 249 μs, resulting in the fluorescence quantum efficiency of 60%. The emission cross sections of the 4F3/2→4I11/2 and 4F3/2→4I13/2 intermanifold transitions have been also determined at room temperature. Finally, these results are compared with those of the standard laser material Nd3+:YAG. © 2001 American Institute of Physics.
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  • 183
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    Journal of Applied Physics 90 (2001), S. 4990-4996 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sapphire crystals were shocked to 190 kbar along the a axis to characterize their use as optical windows, for velocity interferometry measurements, up to their Hugoniot elastic limit. When partially polarized light is incident on the samples, birefringence in the material is manifested as a beat frequency in the probe light that is returned from the specimens. Proper procedures for interpreting the velocity interferometry data for various polarization conditions were developed. The refractive indices at 514.5 nm wavelength decreased linearly with the density. The data were analyzed to yield three photoelastic coefficients: p12, p31, and p41. Calibration is developed for any polarization state of the probe light. Particle velocity wave forms are consistent with elastic behavior up to 170 kbar shock stress, and evidence of deviation from elastic behavior is present at 190 kbar impact stress. High precision shock velocity measurements are reported to 170 kbar stress along the a axis. © 2001 American Institute of Physics.
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  • 184
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    Journal of Applied Physics 90 (2001), S. 5002-5012 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon–silicon alloys (a-C1−xSix:H) deposited by rf plasma enhanced chemical vapor deposition. This method gives alloys with sizeable hydrogen content and only moderate hardness. Here we use a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content. The composition and bonding in the alloys is determined by x-ray photoelectron spectroscopy, Rutherford backscattering, elastic recoil detection analysis, visible and ultraviolet (UV) Raman spectroscopy, infrared spectroscopy, and x-ray reflectivity. We find that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1−xSix:H alloys with a good optical transparency and a band gap well over 2.5 eV. The friction behavior and friction mechanism of these alloys are studied and compared with that of a-C:H, ta-C:H, and ta-C. We show how UV Raman spectroscopy allows the direct detection of Si–C, Si–Hx, and C–Hx vibrations, not seen in visible Raman spectra. © 2001 American Institute of Physics.
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  • 185
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    Journal of Applied Physics 90 (2001), S. 5013-5017 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant increase of HF etching rate and mean surface roughness (monitored by atomic force microscopy) was observed after P ion implantation on thin thermal SiO2 films (150 Å). The dependence upon the ion fluence (in the range 3×1012–5×1013 ions/cm2) and energy (in the range 270–500 keV) was analyzed, together with the recovery effect of a postimplantation annealing in N2 atmosphere. Moreover, the impact of P implants on oxides grown by different sequences, considering postoxidation annealing in N2O or N2 atmospheres, was also studied. The effect of ion irradiation was investigated by thermally stimulated luminescence (TSL) above room temperature in order to obtain information on point defects present in the layers. The results showed that postoxidation annealing treatments in N2 atmosphere carried out not only after, but also before ion implantation, were particularly useful in order to lower the concentration of TSL active defects. This can be interpreted as a role of N2 annealing in favoring a structural rearrangement of the SiO2 layers. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5027-5031 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vibrational modes introduced by the incorporation of N into GaAs and GaInAs have been studied by Raman spectroscopy on samples grown by molecular-beam epitaxy using a rf nitrogen plasma source. When proceeding from GaAs1−xNx to Ga1−yInyAs1−xNx with x≤0.04 and y≤0.12, the nitrogen-induced vibrational mode near 470 cm−1 observed in GaAsN was found to broaden and to split into up to three components with one component at a frequency higher than that of the Ga–N mode in GaAsN. This observation shows that the incorporation of In into GaAsN strongly affects the local bonding of the N atoms by changing the local strain distributions as well as the formation of a significant fraction of In–N bonds. The resonant enhancement in the scattering cross section of the Ga–N vibrational mode, observed in low N-content GaAs1−xNx (x(approximate)0.01) for incident photon energies matching the mostly N-related E+ transition at around 1.8 eV, was found to broaden significantly upon increasing N content as well as upon the addition of In to form GaInAsN. © 2001 American Institute of Physics.
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  • 187
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    Journal of Applied Physics 90 (2001), S. 5048-5051 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate very high efficiency electrophosphorescence in organic light-emitting devices employing a phosphorescent molecule doped into a wide energy gap host. Using bis(2-phenylpyridine)iridium(III) acetylacetonate [(ppy)2Ir(acac)] doped into 3-phenyl-4(1′-naphthyl)-5-phenyl-1,2,4-triazole, a maximum external quantum efficiency of (19.0±1.0)% and luminous power efficiency of (60±5) lm/W are achieved. The calculated internal quantum efficiency of (87±7)% is supported by the observed absence of thermally activated nonradiative loss in the photoluminescent efficiency of (ppy)2Ir(acac). Thus, very high external quantum efficiencies are due to the nearly 100% internal phosphorescence efficiency of (ppy)2Ir(acac) coupled with balanced hole and electron injection, and triplet exciton confinement within the light-emitting layer. © 2001 American Institute of Physics.
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  • 188
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    Journal of Applied Physics 90 (2001), S. 5052-5057 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved vapor diffusion into low modulating porous silicon dielectric mirrors has uncovered salient information about the spatial concentration distribution of the vapor within the porous matrix. Results indicate that relatively high concentrations of vapor result in instantaneous capillary condensation in the pores and yield a uniform concentration distribution. Results are modeled for both a concentration gradient and uniform filling of the porous matrix and compared to the experimental observations. Experiments with acetone, butanone, and pentanone have shown a linear dependence of the capillary condensation saturation time on the molecular weight of the organic solvents. An indicator of a concentration gradient within the matrix has been identified in the form of the full width at half maximum of the first-order reflectivity peak. © 2001 American Institute of Physics.
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  • 189
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    Journal of Applied Physics 90 (2001), S. 5058-5063 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments have demonstrated that nitridation provides critically important improvements in the quality of SiO2–SiC interface. This article provides results and analysis aimed at developing the much needed understanding of the mechanisms and effects associated with both annealing of pregrown oxides and direct growth in NO and N2O environments. According to the model proposed in the article, nitridation plays a double role: (1) creation of strong Si≡N bonds that passivate interface traps due to dangling and strained bonds, and (2) removal of carbon and associated complex silicon–oxycarbon bonds from the interface. This understanding of the effects of nitridation is experimentally verified and used to design a superior process for gate oxide growth in the industry-preferred N2O environment. © 2001 American Institute of Physics.
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  • 190
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    Journal of Applied Physics 90 (2001), S. 5064-5069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten oxide (WO3) thin films were deposited by spray pyrolysis of an ammonium tungsten oxide solution. The effect of postannealing on the structural, transport and optical properties of the films has been studied. Under steady-state illumination, slow photoconductivity growth and relaxation transients were observed at room temperature. The contributions of carrier concentration and mobility to the photoconductivity were determined from photo-Hall and photoconductivity data. The transient photoconductivity was found to be mainly due to photoinduced excess electrons over a wide time range from 0.0 to 104 s. This slow relaxation was characterized by two exponential decays indicating two discrete subband gap levels were involved. The fast photoconductivity relaxation over the time range from 10−8 to 10−1 s was more complicated and probably involved a distribution of subband gap states. © 2001 American Institute of Physics.
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  • 191
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    Topics: Physics
    Notes: We studied the annealing effects on the structures and optical properties of silicon (Si) nanostructured films. The Si nanostructured films were synthesized by pulsed-laser ablation in inert background gas. It was found that the Si nanostructured films partially include an amorphous-like structure under the as-deposited condition. After annealing in nitrogen gas, the crystallinities of the Si nanoparticles recovered, and four visible photoluminescence (PL) bands (1.7, 2.2, 2.7, and 3.1 eV) appeared at room temperature. Furthermore, upon subsequent annealing in oxygen gas, strong quantum confinement effects for both phonons and carriers of the Si nanoparticles appeared, and the relative intensity of the 2.7 eV blue band increased. We fabricated electroluminescent (EL) diodes with active layers of annealed Si nanostructured films, and verified visible EL spectra at room temperature, which exhibited the same trends as the PL spectra. A possible explanation for the increase of relative intensity of the 2.7 eV blue band is the increase of the amount of silicon dioxide, which contains neutral oxygen vacancy defects, in the Si nanostructured films. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5097-5103 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During film growth by a variety of techniques, intrinsic tensile stresses can be created by the coalescence of neighboring islands. Experimental results with diamond films produced by chemical vapor deposition are compared with a relatively simple model to demonstrate that a realistic interpretation of these coalescence stresses must account for effects that are associated with surface roughness. First, the interpretation of curvature measurements during the early stages of film growth must account for this surface roughness. Also, the experiments show that tensile stresses are induced by grain boundary formation during continuing growth after the initial island coalescence event. This understanding differs from the traditional interpretation that continuing intrinsic stress is produced by "templated" growth onto an already strained crystalline lattice. A kinetic model of stress evolution during postcoalescence growth is also presented. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5111-5114 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T〈70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. © 2001 American Institute of Physics.
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  • 194
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    Journal of Applied Physics 90 (2001), S. 5115-5119 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and high resolution x-ray diffraction are used to characterize defects in ZnO layers grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire. Two- and three-dimensional types of growth modes are described and the observed mosaic structure is analyzed in each case. It is found that two-dimensional layers exhibit a roughness as low as 6 nm. Their subdomains have small lateral coherence lengths and a mean in-plane misorientation of ±0.4°, leading to an important dislocation density of 1–4×1010 cm−2. On the contrary, it is demonstrated that, through numerous interactions between dislocations, the three-dimensional growth mode leads to a better structural quality with a larger lateral coherence length and a smaller in-plane mosaic spread of ±0.07°. The total dislocation density is consequently reduced by 1 order of magnitude down to 3–5×109 cm−2 and the radical modification of the structure results in a change of the dislocation distribution. Our results thus demonstrate that two-dimensional growth mode and low full width at half maximum for symmetric x-ray diffraction are a not reliable indicator of a good structural quality. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5126-5134 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different sputtering methods, viz. rf-diode, rf-magnetron, and dc-magnetron sputtering, have been used to increase the sensitivity of Co/Cu/Co/FeMn top spin valve systems by more than a factor of 2. This improvement is due to an enhanced magnetoresistive effect ΔR/R and a reduced anisotropy field Hk for the best sample. In the present paper the transport and magnetic properties are discussed in the context of microstructure and interfacial quality of the multilayers evaluated by comprehensive transmission electron microscopy and x-ray reflectometry investigations. The sample with the highest sensitivity (dc-magnetron sputtered) shows less structural defects and locally smoother interfaces than the other samples. Additionally it is shown that the ferromagnetic interlayer exchange field is not affected by the applied sputtering methods and can be well understood in terms of orange peel coupling. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5139-5146 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shock-wave induced nanopore collapse (average diameter 100 nm) at 4.2 GPa in a 3-μm-thick poly-methyl methacrylate (PMMA) layer is measured in real time using coherent anti-Stokes Raman spectroscopy (CARS). Pore collapse is monitored via CARS transitions of a dye probe embedded in the porous medium. A pore collapse time constant of 3 ns in PMMA is in poor agreement with hydrodynamic pore collapse models but in excellent agreement with a viscoplastic model that uses the "shock viscosity" determined from the PMMA viscoelastic response to shock. The shock viscosity is more than 12 orders of magnitude smaller than the ordinary viscosity. A downstream gauge of polycrystalline anthracene monitors changes in the steeply rising shock front (〈25 ps rise time) after passing through the porous medium or a scattering medium with 100-nm-diam scatterers. The anthracene is a two-dimensional (2D) shock gauge that provides a time sequence of CARS spectra S(t,λ). The 2D gauge is shown to be capable of discriminating between a shock front that gradually rises with time constant tr or a bunch of steeply rising shocklets with an arrival time spread equal to tr. The transmitted shock front is shown to consist of a bunch of steep shocklets with an arrival time spread of 550 ps. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5166-5170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported regarding in-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. In the samples, which were grown by molecular beam epitaxy, only the central regions of the Al0.40Ga0.60Sb barriers were Te doped. Low-field, low-temperature Hall measurements in the dark demonstrated the presence in the GaSb wells of a degenerate electron gas with nonzero occupancy only for the lowest miniband. A positive persistent photoconductivity effect, related to the DX character of the Te impurity, was also observed. This behavior enabled the μ electron mobility to be measured at T=10 K as a function of the nS sheet carrier density. Since the experimental data were consistent with a dominant role of the interface roughness scattering in the limiting of μ, the height, Δ, and the lateral size, Λ, of the interface roughness were determined from the analysis of the μ=μ(nS) dependence. Acceptable values of Δ were obtained, consistent with results of structural investigations in single quantum well samples of GaSb/Al0.40Ga0.60Sb [E. Kh. Mukhamedzhanov, C. Bocchi, S. Franchi, A. Baraldi, R. Magnanini, and L. Nasi, J. Appl. Phys. 87, 4234 (2000)]. © 2001 American Institute of Physics.
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    Journal of Applied Physics 90 (2001), S. 5180-5182 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we analyze the effects of thermal annealing by calculating the optical gain in the InGaN/GaN quantum well. The interdiffusion of Ga and In atoms across the interface of the well and the barrier resulting from thermal treatments is described by Fick's law. The strong piezoelectric effect due to lattice mismatch in the InGaN/GaN quantum well is also considered in the calculation. The results confirm that the thermal annealing can induce an increase of the optical gain. However, an excessive annealing might result in decreasing the optical gain in the InGaN/GaN quantum well. The maximum optical gain can be obtained at a diffusion length of 4Å of In and Ga atoms. There is a good agreement between the experimental data in literature and the optimized diffusion length studied in this work. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 199
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5187-5195 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rare earth selenides, based on the composition (Nd0.5Gd0.5)Se1.50−x where 0.005≤x≤0.030, were prepared by vapor phase reaction, melting, and hot pressing. The transport properties of electrical resistivity, Seebeck coefficient, and thermal diffusivity were characterized between 300 and 1300 K. In addition, carrier concentration and mobility were measured at 300 K. Chemical composition and homogeneity were determined on several samples by electron microprobe and atomic emission spectroscopy. Partial substitution of Nd for Gd was found to stabilize the high temperature gamma (Th3P4-type) phase. This system is characterized by a low thermal conductivity, the temperature dependence of which indicates mixed scattering. Analysis of the Seebeck and carrier concentration data by a single band conduction model suggests the existence of a heavy electron band, responsible for the large thermopower in this system. Electrical resistivity and Seebeck coefficient data were combined in a Jonker analysis to determine a maximum power factor, (S2/ρ), of 5.4 μW/cm °C2, corresponding to a resistivity of 5.5 Ω cm and a Seebeck coefficient of −172.3 μV/°C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 200
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5216-5219 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic entropy change (ΔS) of a single crystal Ni50.1Mn20.7Ga29.6 alloy under different applied fields has been investigated near the martensitic–austenitic structural transition temperature of 219 K. With increasing applied field from 0.2 to 5 T, the sign of ΔS changes from positive to negative. At 0.8 T the positive ΔS reaches a maximum value of about 6.0 J/kg K, and above 0.8 T the increase of applied field results in a negative ΔS. At 5 T ΔS reaches −6.0 J/kg K. The interesting behavior of ΔS is attributed to the first-order martensitic–austenitic structural transition at 219 K on heating. The phenomenon of the considerable magnetic entropy change under the relatively low applied field of 0.8 T and the easy adjustment of the martensitic–austenitic transition temperature indicate that Ni–Mn–Ga single crystal materials may have a possibility for practical applications as magnetic refrigerants. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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