Library

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2010-2014  (2)
  • 2000-2004  (127,303)
  • 1890-1899
  • 1840-1849
  • 2000  (127,303)
Years
Year
Language
  • 101
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2578-2582 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of magnetoresistance and magnetization were carried out on ceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3, containing 10 at. % Ag in a dispersed form. The results obtained for the resistivity at zero applied magnetic field exhibit a shallow minimum at the temperature T∼25–30 K which shifts towards lower temperatures upon applying a magnetic field and disappears at a certain field Hcr. Also the resistivity at helium temperature decreases upon applying magnetic fields. It is shown that the model of charge carriers tunneling between antiferromagnetically coupled grains may account for the results observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 102
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2593-2600 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrodeposited, dc magnetron sputtered, and electron beam evaporated Pt contacts to n-GaN (n=1.5×1017 cm−3) are reported. All contacts were rectifying in the as-deposited condition, and values of the barrier height were determined by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The influence of deposition conditions on the electrical characteristics of the sputtered and electrodeposited Pt contacts was further studied. Additionally, a dependence of the barrier height with time following deposition is shown. Taking into consideration all parameters of this study, the barrier height could differ by as much as 0.65 eV by I–V measurements and 0.64 eV by C–V measurements, with I–V and C–V barriers as high as 1.43 and 1.57 eV, respectively. Reverse current densities are reported for a −5 V bias with the highest and lowest median values differing by a factor of 104 as a result of the different deposition conditions. The electrical properties are believed to be strongly influenced by the presence of electrically active defects introduced during metal deposition. Deep level transient spectroscopy data support this hypothesis. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 103
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2623-2633 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of a model for the specific grain boundary resistivity in metallic bamboo conductor lines is developed and compared to other theoretical treatments, and to experiment. The grain boundary is modeled as an array of scatterers on a plane. The scatterers are called "vacancy-ion" complexes, in which the vacancy represents the boundary free volume, and the ion is an atom adjacent to the vacancy. Three cases are investigated, that of noninterfering scatterers, a continuum of interfering scatterers, and discrete interfering scatterers. The approximations used lead to a specific grain boundary resistivity ∼10−16 Ω m2 for aluminum, in agreement with experiment, for the first two cases. In the noninterfering case, the specific resistivity is independent of the grain boundary area. For the continuum interfering case it is found that the grain boundary resistivity is only weakly dependent on the grain boundary area, and that the grain boundary has a high probability of perfect reflection or transmission of incident electrons. The source of resistivity is from reflection of electrons. This behavior is independent of the exact interaction potential between the incident electrons and the defects which comprise the grain boundary free volume. The discrete interfering case produces specific resistivities several of orders of magnitude too large, and a strong dependence on the grain boundary area. A connection is established between the grain boundary resistivity and the electromigration wind force. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 104
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2634-2640 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the influence of a gate voltage on the Hall constant [electric field effect Hall constant (EFE–HC)] in a quantum-sized Bi film. The dependence of EFE–HC on the applied electric field, film thickness, and temperature was measured. The electric field effect induces a change of several tens of percent in the Hall constant under an applied electric field of 108 V/m. The effect depends on the film thickness in an oscillatory manner similar to that observed in other quantum-size characteristics. We present an interpretation of the known temperature maximum of HC in quantum size Bi films in absence of EFE, by considering the temperature dependence of the electron and hole mobilities. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 105
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2658-2664 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron transport mobility μn in a GaAs/AlxGa1−xAs coupled double quantum well structure has been studied. The central barrier is delta-doped with Si so that we have two sheets of two dimensional electron gas separated by a positively charged donor layer. The subband electron wave functions and the energy levels are numerically obtained as a function of barrier height, barrier width, well width, and doping concentration. The screened ionized impurity potential is obtained in terms of the static dielectric response function within the random phase approximation. The effect of tunneling of electrons through the barrier, screening of ionized impurities, and intersubband scattering on μn of the double channel system is investigated. It would be interesting to compare our results for μn with experiment, when available. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 106
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2641-2647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide traps generated by reactive ion etching are studied using a pulsed femtosecond laser. The second harmonic generation (SHG) signal from the Si/SiO2 interface is sensitive to charged traps in the oxide. The time evolution of the SHG signal indicates that positive traps predominate. The angular dependence of the polarized signal shows that the electric field generated by the oxide traps alters the symmetry of the sample. The damage is greatest for an oxide thickness of 13 nm (for a plasma dc bias of 300 V). Thicker oxides have smaller SHG signals, presumably because the Fowler–Nordheim tunneling currents induced by plasma charging of the oxide surface are smaller. Very thin oxides also exhibit reduced damage. The time dependent SHG signals depend on the temperature of the samples; these data provide information on the trapping and detrapping of substrate electrons by oxide holes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 107
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2665-2670 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate Al single electron structures equipped with miniature (8 μm long) on-chip Cr resistors of R〉Rk=h/e2(approximate)26 kΩ. From the measurement of the Coulomb blockade in single-junction structures we evaluate the self-capacitance of our resistors per unit length, c(approximate)62 aF/μm. We demonstrate that the cotunneling current in the transistor samples in the Coulomb blockade regime obeys the power law, I∝V3+2(R/Rk), predicted by Odintsov, Bubanja, and Schön for a transistor with pure ohmic-resistance leads. The concept of the three-junction single electron pump with on-chip resistors (R pump) is developed. We demonstrate that the technology available allows the R pump with a relative accuracy of the electron transfer of 10−8 to be implemented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 108
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2693-2695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As the ever-decreasing gate oxide thickness approaches the threshold for direct tunneling of electrons across the gate oxide, i.e., about 3 nm, a defect-generation mechanism, which is not present in thicker gate oxides, becomes inevitable. The source of this mechanism is the recombination of channel electrons into the interface traps and their subsequent tunneling through the gate oxide to the gate metal. This carrier transport process generates additional interface traps, and the resultant regenerative feedback cycle culminates in a soft breakdown of the gate oxide, fatally compromising its reliability, and setting the ultimate gate oxide thinness to a value in the neighborhood of 3 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 109
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4807-4812 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic electrical analysis shows that at high temperatures (above the glass transition temperature), the electrical properties of polyetherimide are strongly influenced by space charge. In this article we have studied the relaxation of space charge in two commercial varieties of polyetherimide: Ultem 1000 and Ultem 5000. Their conductive properties were determined by dynamic electrical analysis, using the electric modulus formalism. The complex part of the electric modulus was fitted to Coelho's model which considers ohmic conductivity and diffusion as the prevailing charge transport mechanisms. The complex part of the electric modulus exhibits a peak in the low frequency range that can be associated with space charge. A good agreement between experimental and calculated data is observed after the fitting process to Coelho's model. Differences in the electrode behavior were required: blocking electrode conditions in the case of Ultem 5000 and partially blocking electrode for Ultem 1000. In both cases the conductivity determined is thermally activated and it increases with the temperature due to an increasing mobility, as their carrier densities do not vary significantly in the temperature range studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 110
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3170-3181 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a simulation of the breakdown stage of high-power, short-pulse high-frequency discharges in hydrogen, produced when an electric field of the form E(t)=EmaxIW(1−e−t/τ)sin(ωt) is applied to a cylindrical resonant cavity. Typical discharge operating conditions considered are applied powers 1–15 kW, gas pressures 0.1–20 Torr, cavity diameter of 25.71 cm, tube radius of 0.8 cm, field frequency ω/2π=1.12 GHz, pulse width tP=10 μs, and rising times τ of a few microseconds. Under these conditions, discharge breakdown occurs before the electric field reaches its maximum amplitude EmaxIW, this situation corresponding to the so-called increasing wave (IW) regime. The simulation is based on a Monte Carlo model to calculate the breakdown times, tb, and fields, Eb, for different field rising slopes EmaxIW/τ(similar, equals)10−1−103 V cm−1 ns−1. The results obtained show that a breakdown criterion based on the electron energy balance (cursive-epsilongain=cursive-epsilonloss, where cursive-epsilongain and cursive-epsilonloss are, respectively, the mean electron energy gain and loss) yields excellent agreement between calculated and measured values of tb and Eb, while the classical particle rate balance criterion (νgain=νloss, where νion and νloss are, respectively, the mean electron production and loss frequencies) is satisfied only at pressures below 0.5 Torr. It is further shown that: (i) the IW limit for long breakdown times (tb(similar, equals)τ→∞) corresponds to the continuous wave regime; and (ii) there is an equivalence between pulsed excitation, with pulse width tP, and IW regimes, for short breakdown times such that tb=tP(very-much-less-than)τ. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 111
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2734-2739 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on processing and comparative characterization of epitaxial Bi3Fe5O12 (BIG) films grown onto Gd3(ScGa)5O12[GSGG,(001)] single crystal using pulsed laser deposition (PLD) and reactive ion beam sputtering (RIBS) techniques. A very high deposition rate of about 0.8 μm/h has been achieved in the PLD process. Comprehensive x-ray diffraction analyses reveal epitaxial quality both of the films: they are single phase, exclusively (001) oriented, the full width at half maximum of the rocking curve of (004) Bragg reflection is 0.06 deg for PLD and 0.05 deg for RIBS film, strongly in-plane textured with cube-on-cube film-to-substrate epitaxial relationship. Saturation magnetization 4πMs and Faraday rotation at 635 nm were found to be 1400 Gs and −7.8 deg/μm in PLD-BIG, and 1200 Gs and −6.9 deg/μm in RIBS-BIG. Ferromagnetic resonance (FMR) measurements performed at 9.25 GHz yielded the gyromagnetic ratio γ=1.797×107 l/s Oe, 1.826×107 l/s Oe; the constants of uniaxial magnetic anisotropy were Ku*=−8.66×104 erg/cm3, −8.60×104 erg/cm3; the cubic magnetic anisotropy K1=−2.7×103 erg/cm3,−3.8×103 erg/cm3; and the FMR linewidth ΔH=25 and 34 Oe for PLD and RIBS films correspondingly. High Faraday rotation, low microwave loss, and low coercive field ≤40 Oe of BIG/GSGG(001) films promise their use in integrated magneto-optic applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 112
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2766-2770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate in detail the occurrence of magnetic domains in epitaxially grown MnAs films on GaAs(001) by magnetic force microscopy (MFM). MnAs layers exhibit in their demagnetized state a very complex magnetic domain structure. High resolution MFM images reveal detailed information on the domain wall. Additionally, we imaged magnetic domains in the dependence on the applied magnetic field. This detailed investigation gives new insight into the correlation between film topography and magnetic domain structures. Systematic magnetization measurements in-plane and out-of-plane have shown high anisotropy in our films. The out-of-plane magnetization determined as a function of the applied field reveals that the direction of the magnetic moments in the domain walls are out-of-plane, thus the domain walls are determined as 180° Bloch type. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 113
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2787-2790 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented melt-spun ribbons with composition Sm1+Y(Co1−XCux)5 (X=0–0.3 and Y=0–0.2) were fabricated with a wheel speed of 5 m/s, followed by annealing in the temperature range of 600–1000 °C for 30 min. Our results show that a high degree of texture, in which the c axis is parallel to the longitudinal direction of the ribbons, is obtained in all above ribbons. The room temperature intrinsic coercivity can be significantly enhanced by both Sm additions and Cu substitution and coercivities of 21 and 12.4 kOe an achieved in Sm1.15Co5 and Sm(Co0.8Cu0.2)5 ribbons, respectively. Compared with the Sm-doped ribbons, Cu-doped ribbons exhibit a better thermal stability of coercivity and a high intrinsic coercivity of 5.2 kOe can be maintained at 300 °C in Sm(Co0.8Cu0.2)5 ribbons. Further analysis indicates that the coercivities of Sm- and Cu-doped ribbons are determined by different demagnetization mechanisms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 114
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2843-2852 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4×1011 cm−2 and 6×1011 cm−2), suggesting that both traps contribute comparably to the observed current collapse.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 115
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2885-2891 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes elucidations of conditions for electron interference observation, device designs, and numerical simulations for the solid-state biprism. The solid-state biprism is solid-state version of the already realized vacuum biprism, and is also proposed as a test ground for electron interference observation and a new conceptual device. Towards the realization of this device, the designed semiconductor device structures show that interference pattern with a pitch of 86 nm and a visibility of 0.6 can be realized with an electron energy of 20 meV, a transverse energy spread of 0.3 meV, and an operation temperature of 4 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 116
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2892-2897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the electroluminescence (EL) of single-layer near-ultraviolet (NUV) light-emitting diodes (LEDs) made from poly[bis(p-n-butylphenyl)silane] (PBPS) with three different molecular weights (MWs). Although the NUV EL spectra of the three LEDs exhibited no noticeable differences, we observed a marked MW dependence on such aspects of the operating performance as the EL external quantum efficiency, EL threshold current density and electric field, which were improved as the MW of PBPS decreased. The MW dependence of the hole transport behavior suggested that the MW decrease promoted positive space charge formation in the PBPS layer during LED operation. We attributed the origin of the MW dependence of the LED performance to this positive space charge formation, which played an important role in improving the electron–hole supply balance from the external electrodes of the LED. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 117
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2921-2927 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heterodyne phase-controlled oscillator method to monitor the resonance frequency and quality factor of the tip oscillations was used to control the scanning near-field optical microscope (SNOM) and to study the nature of the shear-force interaction routinely used in SNOM. Both optical and nonoptical (tuning fork-based) detection schemes of the shear force have been investigated using the same electronic unit, which enables a direct comparison of the results. It is shown that the possibility to record simultaneously the topography and dissipative interaction (Q-factor) channels gives additional information about the sample and helps to interpret the data in a manner analogous to that of a usual dynamic force microscope. The peculiarities of the recorded approach curves (increase of the resonance frequency and Q factor when the tip approaches the sample) are consistent with the "repetitive bumping" mechanism of tip–sample interaction for the shear force. Evidence for the transition from the bumping to the permanent sliding mechanism has been obtained for the case of larger vibration amplitudes of the tip. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 118
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2948-2955 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multimode approach based on the simultaneous application of several photothermal and photoacoustic methods is proposed for the study of thermal and thermoelastic effects in solids with residual stress. It includes photoacoustic gas microphone, photodeflection, photoreflectance and photoacoustic piezoelectric microscopy methods. This approach provides complementary information about thermal, elastic and thermoelastic properties of samples with residual stress. Some experimental results obtained within the framework of this approach for Vickers indentation zones in silicon nitride ceramic are presented. The model of the photoacoustic thermoelastic effect in solids with residual stress is proposed. It is based on the modified Murnaghan model of nonlinear elastic bodies which takes into account a possible dependence of the thermoelastic constant on stress. It is demonstrated that the developed theoretical model for the photoacoustic piezoelectric effect agrees qualitatively with the available experimental data. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 119
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2979-2983 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel pretreatment enhancing diamond nucleation has been developed for diamond growth over a large area using a magnetoactive microwave plasma chemical vapor deposition method. After the predeposition of carbon films on Si(100) substrates using CH4/CO2/He gas mixtures, diamond films with high nucleation densities were obtained after a subsequent 2 h growth process commonly employed using a CH4/CO2/H2 gas mixture. In the present study, especially, the effect of CO2 concentration in the CH4/CO2/He gas mixture in the pretreatment process has been examined on the carbon film growth. The results show that the diamond nucleation with densities as high as ∼109/cm2 was attained for small CO2 concentrations of 1%–2% during the pretreatment process, while no successful enhancement was enabled for Si substrates pretreated at high CO2 concentrations beyond 3.7%. The structural property of the predeposited carbon films significantly influenced the diamond nucleation. This was evidenced by in situ data of optical emission spectroscopy and quadrupole mass spectroscopy during the pretreatment process, as well as by ex situ data of morphology and composition of the specimens. The volume density of the carbon films obtained after the pretreatment was maximized at a CO2 concentration of 1.9%. The bonding nature of the carbon atoms deduced from the related Raman scattering spectra apparently changed with CO2 concentration. The role of the predeposited carbon films is discussed in relation to etching and agglomeration phenomena during the subsequent diamond growth process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 120
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3402-3407 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaS:Eu2+,Tm3+ is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm3+ for Ca2+, serve as hole traps for the afterglow at room temperature. Tm3+ plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu2+ ions. These two processes, in which two different sites of Tm3+ are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 121
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3426-3432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical plasma-resonance absorption of Pt island films consisting of Pt particles larger than about 25 Å in diameter has been measured in the photon energy range of 0.5–6.5 eV. As in Rh and Pd island films reported previously, the broadening of the optical plasma-resonance absorption reflects a correlation interaction between conduction electrons. Comparison of the broadening for the Pt island films with that for the Rh island films shows that the correlation interaction is strong when the conduction-electron density n is low. In an electron-gas model, the correlation interaction between electrons becomes stronger with lowering electron density, because the magnitude ratio of the Coulomb to kinetic energy increases as the electron density lowers. Thus, the strong correlation-interaction at low n proves that the correlation interaction in transition metals becomes stronger with magnitude ratio. The magnitude ratio in transition metals is pointed out to increase with lowering n and/or with strengthening d character of conduction electrons. Based on the correlation interaction, reflected by the broadening for the Pt, Rh, and Pd island films, and on the strong correlation interaction, found previously for Ir, the order of magnitude ratio is Ir〉Pt〉Pd〉Rh. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 122
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3445-3447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching kinetics of polarization reversal using lead zirconate titanate (PZT) thin-film capacitors for nonvolatile memories has been analyzed in terms of the Ishibashi model. A practical 16 kbit PZT memory was used in this work. The polarization reversal ratio agrees well with the theoretical model of the first order dimensional domain growth. The domain growth proceeds outwardly with one-dimensional movement, and domain reversal occurs with existing nuclei and is completed before any other significant nucleation takes place. The characteristic domain growth time t0 is 3 ns. This reveals that the domain switching is substantially fast, and therefore it does not affect the read-out operation of the ferroelectric memories. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 123
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3470-3478 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the triangular regions, where the presence of cubic inclusions was confirmed by micro-Raman measurements. The excitation dependence and temperature behavior of these lines enable us to identify their excitonic nature. From our study we conclude that the interface region between these defects and the surrounding wurtzite GaN could be responsible for PL lines. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 124
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3490-3494 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 125
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3522-3526 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this report we present a procedure to fabricate highly transmissive superconducting Nb-In0.77Ga0.23As contacts. A combination of a sulphur passivation of the etched semiconductor prior to the deposition of Nb and an annealing step is used. To quantitatively classify the transparency of the contacts, transport measurements of the differential conductance are carried out at 300 mK and compared with a model given by Blonder, Tinkham, and Klapwijk [Phys. Rev. B 25, 4515 (1981)]. The procedure yields almost ideal superconductor-semiconductor contacts. Additionally, a high reproducibility of the contact transparency is achieved. The results are interpreted in terms of diffusion of In in both the niobium and the In0.77Ga0.23As. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 126
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3545-3551 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of [101] epitaxial films of Pr0.5Ca0.5MnO3 on LaAlO3 substrates has been achieved. The structure, nanostructure, and magnetotransport properties are reported and compared to those of the bulk material. The electron diffraction study evidences, at RT, a monoclinic cell with a(approximate)c(approximate)5.4 Å, b(approximate)7.6 Å, and β(approximate)91°. The monoclinic distortion is assumed to be due to strain effects. At 92 K, a system of extra reflections is observed which implies an incommensurate modulated structure. The component q of the modulation vector along a* ranges between 0.35 and 0.40. The lattice images show that the modulation is established throughout the whole film. The q value observed in the film is significantly lower than the one of the bulk material. This effect is correlated to strain effects of the substrate, limiting the cell distortion induced by charge ordering. An unusual insulating-ferromagnetic phase is observed with a critical temperature of 240 K, close to the TCO. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 127
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3565-3569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd57Fe20B8Co5Al10 bulk cylinders and ribbons were quenched from the melt at different cooling rates using copper mold casting and melt spinning, respectively. Both the melt-spun ribbons and the cast cylinders display x-ray diffraction patterns without obvious crystalline peaks. However, the ribbons show soft magnetic properties, the cylinders are hard magnetic, and the crystallized alloys are not ferromagnetic at all. On the other hand, the cylinders show different exothermic transformation behavior than the ribbons upon heating to elevated temperatures. While the ribbons are regarded as amorphous, the structure of the cylinders prepared at slower cooling rate is considered to consist of metastable ordered clusters. This structure forms in the undercooled melt most likely due to intensive generation of ordered nuclei and slow growth kinetics. The magnetic coherence length, which is equivalent to the dimension of the ordered clusters, may be larger than the exchange length. Therefore, the cylinders shows much larger coercivity than the ribbons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 128
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3587-3591 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equations are presented that relate electric and elastic fields inside and outside a spherical inclusion located in the anisotropic piezoactive medium. A case of the medium with the axial symmetry of properties has been considered in greater detail. A technique has been described for calculating effective constants of an anisotropic piezoactive polycrystal from the constants of the crystallites that compose it. A comparison is made with a similar procedure in which the anisotropy of properties is neglected. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 129
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3601-3607 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet photoelectron spectroscopy has been successfully used to measure the heights of the tops of the valence bands of the surfaces of AgBr layers on Ag substrates for the verification of the space charge layer model. According to this model, the positive space charge layer (composed of negative charges with excess negative kink sites on the surface and corresponding positive charges with interstitial silver ions in the interior) is formed in silver halides, causing the difference in the electronic energy levels between their surface and interior. The depression of the positive space charge layer of AgBr caused by such adsorbates as photographic stabilizers and antifoggants was estimated from the decrease in the ionic conductivity of cubic AgBr microcrystals by the adsorbates. It was confirmed by the decrease in the heights of the tops of the valence bands of the surfaces of AgBr layers caused by the adsorbates in the presence of thin gelatin membranes on their surfaces. This result provided the explanation for the fact that the adsorbates increased the number of the microcrystals which formed latent image centers on the surface and decreased the number of the microcrystals, which formed latent image centers in the interior. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 130
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3624-3628 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The instability of n-channel hydrogenated polycrystalline silicon thin-film transistors has been investigated with respect to gate biasing. The hydrogenation was performed by hydrogen ion implantation through the gate oxide. The conduction mechanism in the gate oxide was studied for positive and negative gate bias, showing that the electron tunneling is much higher for positive gate bias. The oxide conduction follows the Fowler–Nordheim (FN) tunneling mechanism for electron tunneling from the channel and Poole–Frenkel for electron tunneling from the gate polysilicon. After constant FN stressing for short duration (〈10 min), the evolution of the transfer characteristics with stress time indicate passivation of the grain boundary dangling bonds by the H+ positive ions introduced into the gate during hydrogenation with simultaneous electron injection into the gate oxide and interface states generation. For longer FN stress duration, the transfer characteristics are degraded due to enhancement of the donor-like interface states generation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 131
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3667-3673 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field emission properties of diamond-graphite composites were investigated as a function of composition both for oxidized and hydrogen covered diamond. The composites consist of mixtures of nanocrystalline diamond and graphite particles. In this way their composition could be varied at will while the field enhancement factor of the individual crystallites remained unchanged. The measurements prove that graphite is the phase responsible for low threshold field emission. The apparent emission threshold is strongly influenced by the conductivity of the composites. Hydrogenation has two beneficial effects. It provides a conducting path to the emission sites via the hydrogen induced surface conductivity of diamond. It also lowers the effective emission threshold of graphite in contact with diamond that exhibits negative electron affinity after hydrogenation. The latter effect was experimentally verified by photoelectron yield spectroscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 132
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3695-3698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusivity of moisture along the TiN/SiO2 interface has been determined by imaging the inward diffusion of 18O and 2D from isotopically labeled water using a secondary ion mass spectroscopy (SIMS) technique. The diffusivity, at room temperature, of the 18O and 2D labeled species along the interface are indistinguishable and have a value of 6.0±2.0×10−13 cm2/s, four orders of magnitude faster than bulk diffusivity of the same species in the plasma-enhanced chemical vapor deposition silica, also determined by SIMS. From 8 to 90 °C, the activation energies for interface and bulk diffusivities of the 2D labeled species are found to be 0.21 and 0.74 eV, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 133
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3717-3724 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of the interface formed by depositing indium tin oxide (ITO) thin films on Si and Si0.85Ge0.15 substrates was investigated. Cross-sectional transmission electron microscopy combined with Fourier-transform infrared spectroscopy, energy dispersive x-ray analysis, x-ray diffraction, and capacitance–voltage measurements were used to characterize the interface immediately after rf magnetron sputter deposition as a function of annealing time in ultrahigh purity (UHP) N2 at 785 °C for 10–80 min. The In–Si–O2 ternary phase equilibrium diagram was calculated to predict the possible product layer sequences. A 2-nm-thick interfacial amorphous silicon oxide, associated with ion implantation intermixing, is present in the ITO/Si as-deposited sample, while a 3–7-nm-thick amorphous oxide interlayer is observed in the ITO/Si0.85Ge0.15 sample. During annealing in UHP N2, the interlayer oxide growth rate follows the initial stage of conventional oxidation. In the ITO/Si system, experimental observations revealed a preference for the displacement reaction limited by the diffusivity of Si through the SiO2 layer, i.e., Si/SiO2/In/In2O3. This solid-state oxidation process has the potential for in situ fabrication of ITO metallized SiO2 gates in Si thin film transistor applications. On the other hand, the more complicated quaternary In–Si–Ge–O2 system reveals two distinct reaction layer morphologies, suggesting that the presence of Ge strongly influences the stability of the interfacial thermodynamics and kinetics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 134
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3748-3755 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface recombination coefficients of O and N radicals in pure O2 and N2 plasmas, respectively, have been estimated on the stainless steel walls of a low-pressure inductively coupled plasma reactor. The recombination coefficients are estimated using a steady state plasma model describing the balance between the volume generation of the radicals from electron-impact dissociation of the parent molecules, and the loss of the radicals due to surface recombination. The model uses radical and parent molecule number densities and the electron energy distribution function (EEDF) as input parameters. We have measured the radical number density using appearance potential mass spectrometry. The parent neutral number density is measured using mass spectrometry. The EEDF is measured using a Langmuir probe. The recombination coefficient of O radicals on stainless steel walls at approximately 330 K is estimated to be 0.17±0.02, and agrees well with previous measurements. The recombination coefficient of N radicals is estimated to be 0.07±0.02 on stainless steel at 330 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 135
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3765-3767 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report the results of our investigation of neutron irradiation effects on the collector–emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses ∼6×1014 cm−2. We present an analysis of the forward and inverse Gummel plots that clearly shows that the increase in offset voltage is caused by the degradation of the base–collector junction due to the neutron-induced displacement damage in the collector. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 136
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3768-3770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: LiNbO3 films have been deposited on (001) sapphire substrates by pulsed laser deposition, in an oxygen environment. Films grown at substrate temperatures of 650 °C are crystalline, strongly textured, and show a degree of twining that is lower the higher the oxygen pressure is in the range of 0.5–1 Torr. Values of the nonlinear optical coefficients d33 and d31 of the films, measured via second-harmonic generation, are close to those for the bulk LiNbO3 single crystal. The dependence of both the degree of twining and the nonlinear optical response on the film thickness suggests that the films become closer to single domain for larger thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 137
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3773-3775 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin zirconium oxide films, formed on Si(111) substrate by ion-beam assisted deposition, have been investigated by x-ray diffractometry with respect to the microstructure of the films, such as preferred orientation, interplanar spacing, crystallite size. The results of the interplanar spacing and diffraction intensity analysis could be interpreted in terms of relative amount of Zr4+ ions estimated by analyses of Zr 3d x-ray photoelectron spectroscopy spectra for the films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 138
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3785-3785 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 139
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2200-2204 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface etching on second-harmonic (SH) intensity and Maker fringe pattern have been examined for poled borosilicate glasses containing CuCl. A drastic decrease in the SH intensity was observed with anode-side surface etching, while such a decrease did not appear when the cathode-side surface etching was carried out. However, after 20 μm etching of the anode-side surface, a decrease in SH intensity with the cathode-side etching was observed. For some samples, the theoretical Maker fringe pattern derived on the assumption that the SH wave is generated from a thin layer near the anode-side surface is in good agreement with the experimental one. On the other hand, other samples show oscillation in the fringe, which originates from the interference of SH waves generated from both surfaces. These results suggest that the nonlinear layer is present at both surfaces, although it is much weaker near the cathode. It is thought that the origin of the nonlinearity is attributable to migration of Cu+ and Cl−. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 140
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2221-2225 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elevated-temperature plasma immersion ion implantation (PIII) increases the surface hardness and thickness of the modified layer and is traditionally performed at a high energy (typically above 5 keV) and low current density. In this article, we report the benefits of a different approach by high-frequency, low-voltage plasma immersion ion implantation (HLPIII). Experiments and a two-dimensional theoretical simulation are conducted to demonstrate the advantages of the process on a bar-shaped sample in terms of ion dose, dose uniformity, and modified layer thickness. Simulation of the sheath dynamics illustrates that the thinner plasma sheath in HLPIII is geometrically more conformal to the target surface, and the incident ion flux is more uniform along the exposed surface when compared to the traditional high-voltage PIII process. The higher ion dose and thicker modified layer can be attributed to the higher ion current density. HLPIII is thus the preferred technique to enhance the surface properties of large and complex-shaped specimens such as a metal track. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 141
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2246-2251 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absolute densities of positive ions (Cl2+ and Cl+) are obtained over a 2–20 mTorr pressure range and 5–1000 W input radio-frequency rf power range in a transformer-coupled Cl2 plasma. The relative number density of Cl2+ is measured by laser-induced fluorescence. These laser-induced fluorescence data are calibrated by Langmuir-probe measurements of total positive-ion density at low powers to yield absolute values for nCl2+ and are corrected for changes in rotational temperature with rf power. In turn, the nCl2+ data are used to determine the effective-mass correction for refined Langmuir-probe measurements of the total positive-ion density. The density of Cl+ is then the difference between the total positive-ion and Cl2+ densities. For all the pressures, Cl2+ is found to be the dominant ion in the capacitively coupled regime (input powers below 100 W), while Cl+ is the dominant ion at higher powers (〉300 W) of the inductively coupled regime. Experimental results are compared to those from a simple global model. This work is a continuation of a study that provides a complete set of experimentally measured plasma parameters over a broad range of conditions in a chlorine plasma, produced with a commercial, inductively coupled rf source. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 142
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2363-2370 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An easy-to-apply analytical ("mathematical") stress model is developed for the prediction of the stresses in, and the bow of, a circular substrate/thin-film structure subjected to a change in temperature. The model can be helpful for stress–strain analyses and physical design of thin film systems fabricated on circular substrates, experiencing thermally induced bending deformations. Structures of this type are widely used in microelectronics and photonics packaging engineering. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 143
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2386-2390 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bubbles in organic light-emitting diodes can be formed from gas release due to Joule heating effect at localized electrical shorts during operation, which could be simulated by a rapid thermal annealing. The gases in the bubbles consist of not only adsorbed moistures but also the decomposed organic species, which are detected in situ in an ultrahigh vacuum chamber. In the device of Al/tris-(8-hydroxyquinoline) aluminum (Alq/N,N′-diphenyl-N.N′-bis-{3-methylphenyl}{1,1′biphenyl}-4,4′-diamine/indium tin oxide (ITO), the gases released from ITO surface were mainly of adsorbed moistures, while those released from the organic layers were of both the decomposed products from Alq and the trapped moistures. The decomposition of Alq could not be easily avoided if there were severe localized electrical shorts in the devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 144
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2382-2385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration-saturation experiments have been carried out on passivated "L"-shaped interconnects which had three contacts through W-filled vias at the ends and at the corners of the L's. Currents of different magnitudes and directions were independently applied in the two limbs of the L's. Variations in the steady-state electrical resistances were observed, and attributed to a variation in the location of the voids along the lines. Variations in the rate of approach to the steady state were also observed, and are attributed to variations in void shapes. The effects of electromigration in L-shaped interconnects were simulated using an electromigration simulator based on the one-dimensional Korhonen et al. [J. Appl. Phys. 73, 3790 (1993)] model for electromigration, modified to include the effects of junctions. It is shown that, using a single set of input parameters and information about void shapes, the simulation can be used to make accurate worst-case predictions of the evolving and the steady state values of electromigration-induced resistance changes in these simple L-shaped interconnect trees. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 145
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2408-2414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed analysis of the anatomy of microcrystalline (μc-Si) films deposited by plasma enhanced chemical vapor deposition from both SiF4–H2 and SiH4–H2 mixtures is performed by spectroscopic ellipsometry (SE). Specifically, the μc-Si film anatomy consists of an interface layer at the substrate/μc-Si bulk layer, a bulk μc-Si layer, and a surface porous layer. All these layers have their own microstructures, which need to be highlighted, since it is this overall anatomy which determines the optical properties of μc-Si films. The ability of SE to discriminate the complex microstructure of μc-Si thin films is emphasized also by the comparison with the x-ray diffraction data which cannot provide unambiguous information regarding the distribution of the crystalline and the amorphous phases along the μc-Si film thickness. Through the description of the μc-Si film anatomy, information on the effect of the growth precursors (SiF4 or SiH4) and of the substrate (c-Si or Corning glass) on the growth dynamics can be obtained. The key role of the F-atoms density and, therefore, of the etching-to-deposition competition on the growth mechanism and film microstructure is highlighted. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 146
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2437-2442 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline In2O3:Sn (ITO) films have been prepared by reactive radio frequency diode sputtering of an oxidic target using various oxygen/argon mixtures. They mostly contain more oxygen than the ideal crystal. When deposited at low pressure, the crystals have an expanded lattice (up to 3.5%) and, for small oxygen addition to the sputter gas, are also denser than the ideal crystal. This is explained by an incorporation of additional oxygen in the bixbyite structure, possibly into constitutional vacancies. Upon annealing, the lattice relaxes, however, the additional oxygen remains in the films. A model of oxygen segregation into grain boundaries is developed, that could also explain the grain–subgrain structure sometimes reported for ITO films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 147
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2467-2471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49–C 54 TiSi2 phase transition temperature was lowered by ∼200 °C. The C 49–C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 148
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2484-2489 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer systems containing one layer from amorphous silicon (a-Si) are analyzed regarding the absorption of light and the distribution of the electrical field within them. The local electric field strength is derived from the intensity of the Raman lines of the a-Si. Suitable designed multilayer structures may provide more absorption of light in a layer of 55 nm and less than in bulk a-Si. Applications for thin layer solar cells are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 149
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2509-2514 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To probe the one-dimensional nature of single-wall carbon nanotubes (SWNTs) in bulk samples, we have devised a simple method for generating fibers of aligned SWNTs. We measured polarization-dependent Raman spectra on the oriented fibers. Contrary to what is expected from their theoretically assigned vibration-mode symmetries, all the Raman line intensities are observed to decrease in nearly equal amounts for the 647.1 nm laser excitation polarized perpendicular to the fiber axis versus that polarized parallel to the fiber axis. The effect is explained as a loss of resonance Raman scattering for the perpendicular polarization case. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 150
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2529-2532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 151
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2553-2559 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of the nonlinear charge-control model, rate balance equations, and electron-phonon scattering is used to simulate the hot-electron transport and heat generation problem of modulation-doped field-effect transistors. Based on the present model, the trend of high-field transport can be well demonstrated. In addition, the heat generation inside the channel can also be estimated by the energy flux balance equation with the energy relaxation rate formulated by polar-optical phonon scattering mechanism. Scaling down the gate length to submicron range, more heat power is generated inside the channel. However, the heat generation ratio reveals that hot electrons carry over half of the energy density gained from the applied electric field directly into drain region. For 0.1 μm gate length, more than 90% energy density is achieved. By reducing the gate length into the deep submicron range, the thermal impact on the drain side becomes more serious and complicated than the one found inside the channel. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 152
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2583-2587 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall measurements were performed on molecular beam epitaxy grown AlxGa1−xAs:Si in the temperature range 77–300 K. The DX center has been detected through the observation of persistent photoconductivity at low temperature. Two statistics have been developed, using the negative-U model of Chadi and Chang, to analyze the temperature dependence of Hall electron densities. The first statistic is derived assuming that the conduction electrons originate exclusively from the DX center. The second statistic, however, supposes the existence of shallow donors and acceptors in addition to Si–DX centers. The concentrations of these centers are treated as fitting parameters. We have investigated, on the other hand, the pinning of the Fermi level EF and the trend of the probability fDX− of Si to be in the DX− state versus temperature using the previous statistics. We will attempt to explain all these results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 153
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2601-2608 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the role of band edge discontinuities on ionization rates in periodic AlxGa1−xAs/GaAs structures has been performed by measuring the electron and hole multiplication characteristics in a series of submicron AlxGa1−xAs/GaAs multilayer p–i–n and n–i–p structures. These structures comprise alternating 500Å AlxGa1−xAs and GaAs layers in the intrinsic multiplication regions, with a total thickness of up to 0.5 μm. The results show little dependence on initiating carrier type for multiplication region widths above 0.3 μm, nor on whether they originate in GaAs or AlxGa1−xAs. Only alloy-like behavior is observed at all values of multiplication up to the breakdown voltage in contrast to earlier work on single heterojunction structures where a large difference was seen at low values of multiplication between carriers starting in GaAs and AlxGa1−xAs. The microscopic aspects of hot carrier transport in these devices were studied numerically using a simple Monte Carlo model. Simulations suggest that the energy gained from the conduction band edge discontinuity from AlxGa1−xAs to GaAs is offset by the increased energy loss via the higher phonon scattering rate in the preceding AlxGa1−xAs layer. We conclude that AlxGa1−xAs/GaAs multilayer structures offer no electron ionization enhancement. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 154
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2671-2676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using an appropriate coordinate transform we have calculated variationally the ground state exciton binding energy in the single square well under the tilted magnetic field. The dependence of the binding energy to the magnetic field strength, well width, and the direction of the field is discussed. We conclude that for small well widths the exciton binding energy is very sensitive to the tilt angle. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 155
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2687-2692 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents the results of a self-consistent model of midinfrared intersubband absorption in n-doped quantum wells, which are optically coupled by one-dimensional reflective gratings. In the vicinity of the cutoff of the grating, multiple reflections at the well-barrier interfaces play an important role. With an optimized grating, a near-unity absorption quantum efficiency is predicted for the transverse-magnetic polarization. The influence of the top contact on the design of the grating is studied. Performances of standard detectors are compared to those using an additional aluminum-arsenide confinement layer below the bottom contact. Finally, the influence of the number of wells on the performance of the device is investigated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 156
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2718-2723 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of the ac losses of YBa2Cu3O7−x conductors on technical substrates. The samples are taken from conductors 1 m long produced with an ion beam assisted deposition step in the manufacturing process yielding 1 cm wide conductors with critical currents approaching 100 A at 77.4 K. The losses due to combinations of ac transport currents and ac magnetic fields were measured calorimetrically and the results compared to theoretical estimates. While the results of our measurements are similar to the theoretical estimates, there are some important differences in the qualitative behavior. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 157
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2730-2733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical stress caused by flux pinning in a cylindrical superconductor with a concentric hole is investigated theoretically. Exact expressions for the radial and hoop stress are derived using the critical-state model. Stress profiles during a magnetization process often used to activate high-Tc superconductors as strong trapped-field magnets are presented and analyzed in detail. It is shown that due to the hole the tensile hoop stress is enhanced by a factor of 2 or more, depending on the hole diameter. The dramatic increase in cracking probability is emphasized. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 158
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2750-2759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and magnetic properties of the Dy2Fe17Hx compounds, where x is 0, 1, 2, 3, and 3.8, have been investigated by means of powder x-ray diffraction, thermomagnetic and ac magnetic susceptibility measurements, and iron-57 Mössbauer spectroscopy. The Dy2Fe17Hx compounds crystallize in a hexagonal Th2Ni17 -like structure which has both an iron-rich stoichiometry and disorder of the Dy and Fe–Fe dumbbell sites. The increase in the lattice parameters, the magnetic ordering temperature, the saturation magnetization, and the dependence of the Mössbauer hyperfine parameters upon hydrogen content support a two-step filling by hydrogen of the interstitial sites with hydrogen first filling the octahedral 6h sites for x〈3 and then partially filling the tetrahedral 12i sites for x=3 and 3.8. Neither the Mössbauer spectra nor the ac magnetic susceptibility measurements reveal any spin reorientation in any of the compounds. The extent of the excess iron and the disorder observed in all the compounds is confirmed by the Mössbauer spectra and the hyperfine parameters of the iron 4e sites are reported herein for the first time. Finally, the Mössbauer spectra indicate that the interstitial hydrogen atoms partially occupying the tetrahedral 12i sites are jumping between these sites on the Mössbauer time scale. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 159
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2775-2780 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magneto-optical Kerr response of metallic magnetic multilayers has been studied by determining the dielectric tensors (dielectric functions) for individual layers, including the magnetic and nonmagnetic interfacial layers. The diagonal components of these tensors were determined using in situ ellipsometric analysis, where the ellipsometric data were taken in real time during multilayer deposition. The off-diagonal components were determined by regression fitting magneto-optic polar Kerr rotation and ellipticity data to models supported by electromagnetic theory. The Voigt parameters (ratio between off-diagonal and diagonal components of dielectric tensors) were determined from these model fits. Higher magnitudes for the Voigt parameters were found at interfaces, corresponding with stronger Kerr responses observed in those materials. Five different magnetic multilayer systems were studied, including Pt/Co, Pd/Co, Au/Co, Cu/Co, and Pt/Fe multilayer structures. The Voigt parameters for the magnetic layers and magnetic–nonmagnetic interfaces in all five structures were determined, and in turn the dielectric tensors for the respective layers were also determined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 160
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2799-2804 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron spin resonance spectra of a temperature sensitive magnetic fluid involving polydispersed Mn0.5Zn0.5Fe2O4 ferrite particles are scanned from 200 to 400 K. For such a polydispersed system, the deconvolutions of the spectra suggest coexistence of two different resonance modes: (i) a broad line due to ferrimagnetic resonance and (ii) a sharp line at g=2 due to intrinsic superparamagnetic phase. From the intensity variation of the line at g=2, it is found that the contribution due to the superparamagnetic phase increases with temperature. A study of peak-to-peak linewidth variation with temperature indicates that the weakening of the magnetic moment is responsible for the observed reduction in the linewidth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 161
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2830-2835 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical characteristics of Ba0.5Sr0.5TiO3 (BST) thin films deposited by inverted cylindrical magnetron rf sputtering have been investigated. This unconventional sputter deposition technique consisting of a hollow cylindrical composite target of BST, high argon/oxygen gas pressure 53.2 Pa (400 μm), and 750 °C substrate temperature was employed for depositing low-loss BST thin films. The films were postannealed in a tube furnace at 780 °C for 8 h in flowing oxygen. Atomic-force microscopy revealed anisotropic grain growth with a columnar grain structure protruding from the surface with a 0.25 μm grain size. X-ray diffractometry shows the films to be purely (h00) oriented for certain deposition parameters. The lattice parameter of the best film was slightly larger than that for bulk BST. Other deposition conditions yielded films having many of the BST powder peaks. Capacitance versus voltage characteristics have been measured from 50 MHz to 20 GHz. Device Q values 〉600, beyond the resolution of the device/measurement system, were realized with a 6.7% tunability at 10 GHz for the best films.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 162
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2862-2867 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching and memory retention time has been measured in 50 μm gate-length "pseudo" nonvolatile memory metal–oxide–semiconductor field-effect transistors containing protonated 40 nm gate oxides. Times of the order of 3.3 s are observed for fields of 3 MV cm−1. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to be better than 96% after 5000 s. Measurement of the time dependence of the source–drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 163
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2872-2876 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier-separation characteristics of a p-channel metal–oxide–semiconductor field-effect transistor with 29 Å gate oxide has been measured at various temperatures from 90 to 375 K. It is found that the gate and source/drain currents at low gate voltage regime (below 0.5 V) were correlated and strongly dependent on temperature above 250 K. The earlier observation has been attributed to the existence of a temperature-sensitive hole direct-tunneling current due to the strong temperature sensitivity of surface hole's concentration at low voltage regime. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 164
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2898-2905 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The issue of intermodulation distortion in superconducting devices for rf and microwave applications is discussed. The classical frequency conversion theory for nonlinear two-port devices in the small signal limit is shown to apply to microstrip resonators regardless of their geometry and material. Two tone, third order intermodulation measurements allow more sensitive detection of nonlinearity compared to surface impedance measurements, provided a low noise, spurious free experimental setup is adopted. Measurements carried out on high quality Nb meanderline microstrip resonators show that at very low power level nonlinearity is dominated by intrinsic device properties. Film defects start to play a predominant role above a critical power level that strongly depends on the defect's nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 165
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2928-2935 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inner-surface roughness of thick cryogenic-fuel layers in inertial confinement fusion (ICF) targets plays a critical role in determining the overall success of an ICF capsule implosion. Imperfections at this surface affect the growth of Raleigh–Taylor hydrodynamic instabilities during both the acceleration and deceleration phases of the implosion. Characterization of this surface is performed using a Mach–Zehnder interferometer that illuminates the target with a wavefront that is convergent to a point near the targets' rear focal point, thereby reducing the strong negative-lens effects of the thick cryogenic fuel layer. The construction of this interferometer is described in the text. Phase-shifting interferometry is utilized to acquire the perturbed wavefronts that have passed through the target. These wavefronts are subsequently sampled around the target perimeter and decomposed into a one-dimensional Fourier spectrum, which is Abel transformed into a two-dimensional (2D) spectrum. The validity of convergent-beam interferometry is demonstrated by analyzing numerically generated perturbed wavefronts. The wavefronts are analyzed, and the (2D) spectrum obtained is compared to the actual spectrum imposed on the interior of the ice surface of the target model. Agreement between these spectra is 〉80% for Legendre modes between 2 and 50. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 166
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2956-2966 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesively bonded elastic layers with thicknesses that are small relative to their lateral dimensions are used in a wide variety of applications. The mechanical response of the compliant layer when a normal stress is imposed across its thickness is determined by the effects of lateral constraints, which are characterized by the ratio of the lateral dimensions of the layer to its thickness. From this degree of confinement and from the material properties of the compliant layer, we predict three distinct deformation modes: (1) edge crack propagation, (2) internal crack propagation, and (3) cavitation. The conditions conductive for each mode are presented in the form of a deformation map developed from fracture mechanics and bulk instability criteria. We use experimental data from elastic and viscoelastic materials to illustrate the predictions of this deformation map. We also discuss the evolution of the deformation to large strains, where nonlinear effects such as fibrillation and yielding dominate the failure process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 167
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2984-2993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of acoustic Lamb waves in free standing chemical vapor deposited polycrystalline diamond has been studied using a laser ultrasonic technique. The influence of film morphology, quality, and thickness on the waves has been assessed. Acoustic waves with high velocities in the range 8700–12 200 ms−1 were observed; the lowest values were recorded for films with the lowest crystal quality and highest nondiamond content. High quality films with differing crystal textures or thickness show little variation. The influence of temperature on the dispersion characteristics of Lamb wave propagating in a 50 mm diam polycrystalline diamond wafer were also investigated. Little variation was apparent across the range studied (30–250 °C). Material parameters extracted from the dispersion chracteristics of the acoustic signal together with scanning electron microscopy studies suggested that void, microcrack, and grain boundary density most influences the propagation of low frequency Lamb waves in free standing CVD diamond films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 168
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3022-3028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual stress distribution in a thin-film strip overlaid on a substrate is influenced by the edges of the strip. An analytical model is developed to derive a closed-form solution for the stress distribution along the film width. Because the film is much thinner than the substrate, the stress variation through the film thickness is ignored; however, the stress variation through the substrate thickness is considered in the analysis. Compared to the existing analytical models, the present model is more rigorous and the analytical results agree better with both finite element results and experimental measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 169
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Particle generation by gas-phase nucleation in the plasma enhanced chemical vapor deposition process and its effects on thin film surface morphology were studied experimentally for a conventional radio frequency plasma reactor using tetraethylorthosilicate (TEOS) vapor and oxygen gases. The particles suspended in the plasma space and deposited on the film were observed simultaneously by in situ laser light scattering methods and an ex situ scanning electron microscopic method. The generated particles were trapped in the plasma/sheath boundary under all four experimental conditions, in which TEOS concentrations were 0.5 and 5.0 vol % and reactor pressures were 66.7 and 533.3 Pa (0.5 and 4.0 Torr). The size and amount of particles and the film morphology were found to depend on the TEOS concentration and the reactor pressure. Under the conditions in which highly concentrated particles were generated in plasma, dome-like structures of 50–400 nm in diameter were observed on the thin film surface. The average size of the dome-like structure was comparable to that of the particles generated in plasma. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 170
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3067-3069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sn-doped AgInO2 thin films were prepared on α-Al2O3(0001) single-crystal substrates by pulsed laser deposition. The films prepared under optimized conditions have high optical transmittance up to the near-ultraviolet region and high electrical conductivity. The optical band gap was estimated to be ∼4.1 eV, and electrical conductivity was 7.3×101 S cm−1 at 300 K. The carrier concentration and Hall mobility at 300 K were 3.3×1020 cm−3 and 1.4 cm2 V−1s−1, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 171
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3087-3089 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed that stress-induced leakage currents (SILC) in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after stress, regardless of the polarity of the applied gate bias. The reduction of SILC increased with the applied gate bias and began to saturate after 105 s. In addition, the reduction of SILC was significantly enhanced in a hydrogen ambient, suggesting a strong link between the reduction of SILC and trapped-hole annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 172
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3105-3105 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 173
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1722-1725 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mode of 0°–360° bistable twisted nematic (BTN) liquid crystal display is developed by using a parameter space method. This new mode possesses a large dΔn value that provides a possibility of using a 4.8–7 μm cell gap and a 6.5 V operating voltage for the new 0°–360° BTN cells. The high-contrast ratios above 80 within −80°–80° viewing-angle ranges are obtained experimentally in a horizontal direction, and the highest contrast ratio achieved is up to 250. In the contrast ratio, the experiment's results concur with the simulation results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 174
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1747-1755 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal temperature of rhodamine B-dyed dust particles (2rp=1.2 μm) immersed in radio-frequency (rf) plasmas has been measured for various plasma conditions. For this purpose, the dye has been excited with an argon-ion laser and the fluorescent emission of the particles has been recorded with an optical multichannel analyzer system. The temperature has been determined after comparison with calibration curves. In argon, the particle temperature increases with rf power and is independent of pressure. In oxygen, an increase with rf power is observed, too. However, the energy flux towards the particles includes also heating by atom recombination (association) and exothermic combustion reactions. These temperature measurements have been compared with calculations based on the thermal balance, where measurements of gas temperature, electron density, and electron temperature have been used. A good agreement between theory and experiment has been found. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 175
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1765-1770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinetic model is developed for the activation of group V impurities in Hg1xCdxTe alloys as acceptors. The model assumes that mercury interstitials are introduced at the surface and diffuse into the alloy. There, they displace group V impurities residing on the metal sublattice and place them on the tellurium sublattice, generating tellurium interstitials. These tellurium interstitials then diffuse back to the top surface, or to climbing dislocations. The rate-controlling process is the out-diffusion of the tellurium interstitials. A key finding is that the conversion rate is inversely proportional to the impurity concentration. The model is found to be in good agreement with published data for the activation of arsenic.© 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 176
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1794-1801 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a considerable, continuous degradation depending on the electron-beam current, scan area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grain boundary regions are the most effective collectors of the electron-beam generated charge carriers. Our phenomenological model relates the observed degradation to defects caused by the electron-beam generated electrons and holes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 177
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 178
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1838-1843 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that (001) Al layers grow on Cr layers in the Stranski–Krastanov (SK) mode [T. Kingetsu, Y. Kamada, and M. Yamamoto, J. Appl. Phys. 87, 159 (2000)]. In the present study, the dependence of the growth behavior of (001) Al/Cr superlattices on the thickness of Cr layers in molecular-beam epitaxy was investigated, using in situ reflection high-energy electron diffraction and ex situ x-ray diffraction analyses. The (001) epitaxial growth proceeds with an orientational relationship of Al(001)[010]||Cr(001)[110], in the cases where the Cr layer thickness is three monolayers or larger. The critical thickness of the SK growth, the maximum thickness of the two-dimensional growth at the early stage, depends on the thickness of the Cr underlayers. The critical thickness is two monolayers when the Cr underlayer thickness is four monolayers or greater, while the critical thickness increases to three monolayers when the Cr underlayer thickness is reduced to three monolayers. Postdeposition evolution of Al three-dimensional islands also depends on the Cr underlayer thickness, although the thickness where the three-dimensional islands start to occur is about three monolayers in both cases. In the cases where the Cr layer thickness is two monolayers or smaller, epitaxial growth of the superlattices is found to be unstable. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 179
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1851-1854 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1×1014 to 1×1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 180
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1867-1872 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heterogeneous nucleation and subsequent growth of chemical vapor deposited copper using hexafluoroacetylacetonate-Cu(I)-trimethylvinylsilane on physical vapor deposited tantalum and chemical vapor deposited titanium nitride was studied by means of electron microscopy and atomic force microscopy. It was found that the nucleation densities are about two orders of magnitude higher on TiN than on Ta. This leads to an increased roughness of films deposited on Ta compared to those produced on TiN. Moreover, the Cu films on the Ta substrate show a large number of voids, whereas no such voids were observable in the Cu films deposited on top of TiN. A simplified model for the influence of gas-surface reaction and surface self-diffusion on the shape of the Cu grains was developed. This model, which is supported by the experimental data, shows that if the grain shape changes from spherical to nonspherical before coalescence with neighboring grains, voids occur. A critical grain size and nucleation density of about 150 nm and 5×1013 m−2, respectively, were calculated for the deposition conditions used in this work. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 181
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1893-1899 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical nonlinearity has been investigated in granular metal/dielectric composites taking the effects of highly conducting interfaces between the constituent phases as well as the distribution of particle sizes into account. We compute analytically the spectral function for composites with a binary distribution of particle sizes. For a log-normal distribution of width σ, numerical results show that the spectral density m(s) changes from a delta function for zero width to a prominent peak, accompanied by a broad spectrum for a finite width σ. As a result, the locations of the nonlinearity enhancement peak and the absorption spectrum shift to small frequencies with the increase of the interfacial factor I. The strength of the absorption and the optical nonlinearity are always decreased near resonance with the increase of σ, while the absorption peak and optical nonlinearity peak shift to smaller volume fraction f as I is increased. Moreover, the variation of I will further increase the optical absorption (optical nonlinearity) by more than one (three) order of magnitude, depending on the volume fractions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 182
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1916-1922 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) spectra of nanoscale diodes formed after gate-oxide breakdown of n+-polysilicon/oxide/p+-substrate metal–oxide–semiconductor capacitors were measured in reverse and forward bias. The nanoscale diodes, called diode antifuses, are created by the formation of a small link between the n+-poly and the p+-substrate with the properties of a diode. A previously published multimechanism model for avalanche emission from conventional silicon p–n junctions is applied to fit the EL spectra in reverse-biased silicon-diode antifuses. The results show that the light from reverse-biased diode antifuses is caused by the same phenomena as in conventional p–n junctions. Forward-bias spectra of the diode antifuses show different shapes when lightly or highly doped p substrates are used. In the case of a lightly doped p substrate, the EL intensity in the forward mode is increased by about two orders of magnitude in the visible-wavelength range with a maximum intensity in the infrared region. A phonon-assisted electron–hole recombination model is applied to fit the low-energy part of emitted spectra. The visible emission is attributed to the Fowler–Nordheim tunneling current through the SiO2, enabled presumably by electron capture into SiO2 trap levels and intraband transition of hot electrons injected into the Si bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 183
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1907-1915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work introduces an application of an "interference spectroscopy technique" (IST) for determination of absorption coefficient and refractive index spectra of amorphous silicon (a-Si:H) and related thin film materials. The technique is based on computer analysis of measurements of optical transmission and specular reflection (T & R) of thin films (including the films on substrates) over a wide range of the incident photon energies (0.5–2.8 eV) using carefully controlled spectrometer conditions. IST is used to investigate the absorption spectrum in the sub-gap energy range (0.8–1.6 eV) of intrinsic and phosphorous-doped a-Si:H, "polymorphous-Si:H," and microcrystalline silicon films. The enhanced sensitivity of the technique over conventional analysis of T & R data results from utilization of interference to obtain absorption coefficient values at the maxima of transmission. The factors limiting the accuracy of the calculated absorption coefficient are discussed in detail. Measurement on films of thickness ranging from 0.1 to 5 μm identifies that the sub-gap absorption in these films arises from the bulk rather than the surface. A set of samples prepared under widely different conditions that appear to have overlapping (α=20 cm−1) sub-gap absorption spectra measured using photo-thermal deflection spectroscopy (PDS), reveal significant differences (α=10 to 100 cm−1) using IST. Changes (factor of 2) in sub-gap absorption spectra due to light soaking are also clearly observable using IST. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 184
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1900-1906 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the fluorescence lifetime of the 4S3/2 state of the Er3+ ion on the ErF3 concentration was measured in fluorozirconate glasses at room temperature. Energy transfer rates were calculated from optical parameters assuming that the Er3+ ions in fluorozirconate glasses were dispersed as the cubic, bcc, or fcc structure, and were inserted into the rate equation. The dependence of the total transition rate of the 4S3/2 state of the Er3+ ion on the ErF3 concentration was calculated by using the rate equation and compared with the total transition rate measured by the lifetime experiment. Although many studies have reported the energy transfer rates in various rare-earth ions, the reliability of the calculated energy transfer rates has been hardly discussed. The energy transfer rate can be derived from the total transition rate. The energy transfer rate estimated from the rate equation calculation was compared with the energy transfer rate obtained from the lifetime measurement. It could be shown that the calculated energy transfer rate assuming that the Er3+ ions were dispersed as the cubic structure was closer to the measured energy transfer rate than that as the bcc and fcc structures. With increasing the ErF3 concentration, the calculated energy transfer rate when the Er3+ ions were dispersed as the cubic structure was comparable to the measured energy transfer rate. It was suggested that at the lower concentration of ErF3 (≤2 mol %), we needed to use the distance between Er3+ ions which was shorter than that as the cubic structure in the calculation of the energy transfer rate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 185
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1923-1928 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the complex dielectric tensor components of the chalcopyrite semiconductor CuAlSe2 in the energy range between 1.4 and 5.2 eV, at room temperature, using spectroscopic ellipsometry. We present results obtained on two single crystals grown by the traveling-heater method using In solvent. Values of refractive indices n, extinction coefficients k and normal-incidence reflectivity R in the two independent polarizations are reported. The structures observed in the energy region studied are analyzed by fitting the second-derivative spectra d2cursive-epsilon(ω)/dω2 to analytic critical-point line shapes. The obtained energies are assigned to certain electronic interband transitions by comparison with existing band structure calculations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 186
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1935-1942 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy levels of the 4f3 electronic configuration of Nd3+ in barium fluorapatite, Ba5(PO4)3F(B-FAP) have been determined from polarized absorption and fluorescence spectra using crystals at 8 K. Experimental energy-level assignments were made initially by comparing the crystal spectra energy levels with those obtained from those previously reported for Nd3+ in strontium fluorapatite and fluorapatite. The initial crystal-field parameters were calculated by using lattice summation techniques. The crystal-field parameters were varied to obtain a best fit between experimental and theoretical energies and the final values give a root-mean-square deviation of 7.1 cm−1. The odd-fold crystal-field components are used to calculate the emission intensities and lifetimes of the Nd3+ ions in B-FAP. These calculations yield results in good agreement with the experimental measurements of the absorption and emission cross sections and lifetimes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 187
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1929-1934 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simulation program for admittance calculations in a semiconductor Schottky junction with a trap was developed using physical parameters including the Poole–Frenkel electric field-assisted emission effect. The simulation revealed limitations in the validity of the admittance measurement technique in determining thermal activation energies of semiconductors. The controversy in the observed thermal activation energy of the GaN:Mg structures between the Hall effect and admittance spectroscopy measurements is explained using the simulation results. The admittance measurement technique can only determine the real energies when the overall doping concentration of the shallow (NS) and deep (NT) levels is low and while NT≤NS. While the condition of NT≥NS causes a reduction in the apparent measured energies, the electric field built up at the crossover by NS or/and NT further reduces the energies by lowering the barrier potential for the trap emission. Particularly if NT(very-much-greater-than)NS, the electric field induced by the deep level itself induces the reduction in the barrier potential. This is the case for the rather highly doped GaN:Mg structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 188
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1948-1951 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a study of thermoelectric properties of chemically substituted quasiternary materials related to the recently discovered filled skutterudite compound YbFe4Sb12. The study explored partial filling at the Yb site as well as chemical doping with Sn at the Sb site in an attempt to optimize the thermoelectric figure of merit ZT in the system YbyCo4SnxSb12−x. Our measurements of these physical quantities from room temperature down to T=10 K indicate that, in our study, only the alloy Yb0.44Co4Sb12 possessed thermoelectric properties that are improved over the parent compound YbFe4Sb12, attaining a value of ZT=0.1 at T=300 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 189
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1943-1947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metastable hydrogen-related defects (M3/M4) in n-GaAs were studied in detail by using isothermal deep-level transient spectroscopy. In order to clarify the electric-field dependence of the electron-emission process, the double-correlation technique was applied to both M3 and M4 defects. It was clearly shown that with increasing electric field, the M4 level observed around 140 K split into two discrete components labeled M4(1) and M4(2). The result supports the recent finding that the M4 defect consists of two different configurations. On the other hand, the M3 defect gave a single peak in the double-correlation spectra around 230 K. The electric field dependence of the emission rates suggests that the M3 and M4(1) defects have a donor-like nature, while the M4(2) defect is acceptor-like. It was speculated that the metastable defect coupling with the M3 level is only M4(2) out of two components of the M4 defect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 190
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1952-1955 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unlike semiconducting TiCoSb, ZrCoSb and HfCoSb half-Heusler phases are semimetallic below room temperature and exhibit small Seebeck coefficients of ∼−10 μV/K at 300 K. However, upon substituting (doping) the Co and Sb sites with Pt and Sn, respectively, much larger thermopowers (S) are obtained. For ZrCoSb, S reaches −110 and +130 μV/K while resistivity ρ decreases from ∼5×104 μΩ cm in the undoped phase to 1–2×103 μΩ cm in the substituted phases at 300 K. The lowest thermal conductivity obtained in the substituted alloys is ∼3.0 W/m K at 300 K, which is among the lowest reported for this class of structural phases. There are indications that the thermoelectric properties have not been optimized in these multinary alloys. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 191
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1956-1961 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model for the calculation of the anisotropy in the electron Hall mobility is reported for n-type bulk single crystals of 4H– and 6H–SiC for the three distinct Hall measurement configurations: (a) [B(parallel)c, j⊥c], (b) [B⊥c, j⊥c], and (c) [B⊥c, j(parallel)c], where B, j, and c are the directions of the magnetic field, current flow, and c axis of the hexagonal unit cell, respectively. Comparison with experimental results shows that the anisotropy of the electron transport in both 4H– and 6H–SiC can be explained solely by the anisotropy in the effective electron mass tensors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 192
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1962-1970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A solution methodology is presented in this article to compute the effective permittivity for a multiphase lattice of dielectric and/or conducting spheres at low frequencies. It is assumed that the lattice is effectively isotropic. This methodology relies on two central developments. The first is a T-matrix solution for a multiphase lattice of spheres immersed in a uniform electric field. This solution is presented in a succinct matrix-vector notation and is valid for any lattice type. The second development is a simple and accurate equation for the effective permittivity that incorporates all mutual coupling between the spheres. Results are shown in this article for three situations. The first is a two-phase system of conducting spheres (used for verification) and the second is a dielectric-conductor (cermet composite) lattice of spheres. The third and final result is from a lattice containing a cluster of conducting spheres. It is suggested that this last material type displays a behavior in between that of random materials and two-phase lattices due to "permittivity enhancement" at low volume fraction. It is also shown that the Maxwell Garnett formula is not nearly as accurate for this cluster lattice, also because of this enhancement effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 193
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1971-1977 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of the electrical activation of aluminum implanted at high dose in 4H–SiC. We show that at reasonably high temperature implantation and annealing conditions, one activates about 37.5% of the implanted species. Of course, the final (concentration-dependent) activation ratio differs slightly from this average value but varies only between 0.5 and 0.25 when the targeted concentration increases from 3.33×1018 to 1021 cm−3. Provided a standard mobility can be maintained, this results in fairly low sheet resistance. The best (lowest) value obtained in this work is 15 mΩ cm at 700 K (95 mΩ cm at room temperature) for a 190-nm-thick layer implanted with 1021 atoms cm−3. In MESA-etched p–n junctions with a 100 μm diameter, this resulted in a typical on-resistance of 1.5 mΩ cm2, mainly limited by the substrate and n− epitaxial layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 194
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characterization of AlN/GaN interfaces was carried out by the capacitance–voltage (C–V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C–V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density Dit of 1×1011 cm−2 eV−1 or less around the energy position of Ec−0.8 eV was demonstrated, in agreement with an average Dit value estimated from photoassisted C–V characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 195
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1978-1982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of some features of a two-dimensional hole gas confined in a Si/Si1−xGex/Si/SiO2 structure when the external applied gate bias is varied. From the framework of the effective-mass theory, and applying the semiaxial approximation to separate the 6×6 Luttinger Hamiltonian into two 3×3 matrices, we calculated the hole density profile and the band structure. This enabled us to evaluate, in an iterative process, the Poisson and Schrödinger equations until convergence was achieved, obtaining the above-mentioned results for a discretional angle in the kx–ky plane, and thus including the warping. We identified in this way the influence of the different technological parameters which determine the behavior of the device, in particular, through the determination of a unique effective mass. We conclude that the utility of this kind of device lies more in the possibility of modifying the band structure due to the strain introduced than in the fact of being able to confine carriers in the Si1−xGex channel. Accurate calculation of the band structure is, therefore, needed and although simpler simulations can qualitatively model some features of the device, a complete study as described in this article must be carried out in order to obtain better insight into the physics of the system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 196
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1987-1991 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of the InAs self-assembled quantum dots embedded both in a GaAs bulk matrix and in a GaAs/AlAs superlattice were investigated. Evidences of electrons confinement inside the InAs quantum dots were obtained using both capacitance–voltage measurements and Raman spectroscopy. A much stronger electron localization was detected for the quantum dots embedded in the superlattice in comparison with those embedded in bulk GaAs. As a consequence, the electrical characteristics of the structures with quantum dots grown in superlattices were found to be significantly thermo-stabilized. The origins of these effects are discussed in connection with the differences between the electronic features of the two kinds of structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 197
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1992-1998 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of silicon nanocrystals in Er doped SiO2 can enhance the effective Er optical absorption cross section by several orders of magnitude due to a strong coupling between quantum confined excitons and Er. This article studies the fundamental processes that determine the potential of Si nanocrystals as sensitizers for use in Er doped waveguide amplifiers or lasers. Silicon nanocrystals were formed in SiO2 using Si ion implantation and thermal annealing. The nanocrystal-doped SiO2 layer was implanted with different doses of Er, resulting in Er peak concentrations in the range 0.015–1.8 at. %. All samples show a broad nanocrystal-related luminescence spectrum centered around 800 nm and a sharp Er luminescence line at 1536 nm. By varying the Er concentration and measuring the nanocrystal and Er photoluminescence intensity, the nanocrystal excitation rate, the Er excitation and decay rate, and the Er saturation with pump power, we conclude that: (a) the maximum amount of Er that can be excited via exciton recombination in Si nanocrystals is 1–2 Er ions per nanocrystal, (b) the Er concentration limit can be explained by two different mechanisms occurring at high pump power, namely Auger de-excitation and pair-induced quenching, (c) the excitable Er ions are most likely located in an SiO2-like environment, and have a luminescence efficiency 〈18%, and (d) at a typical nanocrystal concentration of 1019 cm−3, the maximum optical gain at 1.54 μm of an Er-doped waveguide amplifier based on Si nanocrystal-doped SiO2 is ∼0.6 dB/cm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 198
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1999-2004 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A physically based two-dimensional simulation for a polycrystalline CdSe thin-film transistor with multi-energetic trapping states located 0.11, 0.33, and 0.67 eV below the conduction band in the semiconductor and localized at the grain boundaries was presented. It was shown that the experimentally observed gradual transition from the exponential (or subthreshold) to linear (or post-threshold) regime is due to the effect of the trapping–detrapping process at the shallower trapping level of 0.11 eV, whereas the subthreshold slope has a strong dependence on the density distribution of the deeper trap at 0.33 eV, and the traps at 0.67 eV have no experimentally observable effect on the shape of the transfer characteristics of TFTs. Furthermore, each trap energy level only affects the shape of the transfer characteristics in a range of gate voltages when |EF −ET|〈3kT. The fixed oxide charge density at the SiO2/CdSe interface was extracted from C–V measurements on metal-oxide-semiconductor capacitors and shown to be 3×1011/cm2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 199
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2013-2015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface passivation of undoped p-CdTe(100) by (NH4)2Sx treatment was investigated by using photoluminescence (PL), photoconductivity (PC), and x-ray photoelectron spectroscopy (XPS). After sulfur treatment for 2 min, the acceptor bound exciton (A0, X) peak increases greatly in the PL spectrum, and the minority-carrier lifetime of CdTe becomes the longest value in the PC measurement. The XPS spectrum for untreated CdTe shows the additional peaks on the right side of two main Te peaks corresponding to the Te 3d core levels, and these additional peaks are related to TeO3 with binding energies of 576.2 and 586.5 eV. After sulfur treatment, while the intensities of the Te 3d core levels decreased gradually, those of the TeO3 peaks disappear. In addition, the S 2p core-level spectra for sulfur-treated CdTe show the peaks at the 161.7 and 162.8 eV, which are attributed to a CdS formation at the surface of CdTe. These results indicate the sulfur effectively dissociates the native oxides from and neutralizes the dangling bonds at the surface of CdTe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 200
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the optical and electrical properties of n-i-n GaAs/(AlGa)As double barrier resonant tunneling diodes (RTDs) in which a layer of InAs self-assembled quantum dots (QDs) is embedded in the center of the GaAs quantum well. A combination of photoluminescence (PL) and electrical measurements indicates that the electronic states and charge distribution in this type of RTD are strongly affected by the presence of the dots. Also, the dot PL properties depend strongly on bias, being affected by tunneling of majority (electrons) and minority (photocreated holes) carriers through the well. The measurements demonstrate nonlinear effects in the QD PL by means of resonant tunneling and the possibility of using the dot PL as a probe of carrier dynamics in RTDs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...