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1

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A measurement of τ polarization in Z^0 decays (1992-8977)

L3 Collaboration

Amsterdam : Elsevier

Physics Letters B 294 (1992), S. 466-478

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ISSN: 0370-2693

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(92)91549-O

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2

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Measurement of the average lifetime of b hadrons (1993-4325)

L3 Collaboration

Amsterdam : Elsevier

Physics Letters B 317 (1993), S. 474-484

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ISSN: 0370-2693

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0370-2693(93)91027-K

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3

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Profiled Poly-Silicon Films by Hot-Wire Chemical Vapour Deposition for Solar Cells on Cheap Metal Substrate (1999)

Rath, Jatindra K. ; Tichelaar, F.D. ; Schropp, Ruud E.I.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 465-470

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.465.pdf

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4

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Status, Hopes and Limitations for the Si: Er-based 1.54 μm Emitter (1999)

Jantsch, W. ; Lanzerstorfer, S. ; Stepikhova, Margarita ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 53-62

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.53.pdf

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5

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Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut' (1999)

Pantelides, Sokrates T. ; Reboredo, F.A.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 83-92

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.83.pdf

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6

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Improving the Quality of Polycrystalline Silicon String Ribbon for Fabricating High Efficiency Solar Cells (1999)

Elgamel, H.E.A. ; Gobrecht, J.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 521-528

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.521.pdf

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7

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Materials Quality and Materials Cost - Are they on a Collision Course? (1999)

Ravi, K.V.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 103-110

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.103.pdf

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8

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Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure (1999)

Dib, H. ; Benamara, Z. ; Boudissa, A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 559-564

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.559.pdf

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9

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Heterojunctions for Polycrystalline Silicon Solar Cells (1999)

Hausner, R.M. ; Jensen, N. ; Bergmann, R.B. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 571-576

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.571.pdf

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10

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Oxygen and Peculiarities of its Precipitation in Si〈Ge〉 (1999)

Khirunenko, L.I. ; Pomozov, Yu.V. ; Sosnin, M.G. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 215-220

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.215.pdf

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11

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Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond (1999)

Mozer, A.P.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 1-12

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.1.pdf

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12

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Defect Engineering in the Development of Advanced Silicon Crystals and Wafers (1999)

Vanhellemont, Jan

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 111-120

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.111.pdf

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13

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200 GHz Potential of Si-Based Devices (1999)

König, Uwe

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 121-130

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.121.pdf

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14

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Silicon Materials Engineering for the Next Millennium (1999)

Kimerling, Lionel C.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 131-142

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.131.pdf

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15

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Impurity Gettering Investigation in the Si-SiO〈sub〉2〈/sub〉 System (1999)

Kropman, Daniel ; Poll, V. ; Tambek, L. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 267-272

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.267.pdf

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16

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Gettering Processes for the Preparation of Silicon Solar Cell Material (1999)

Efremov, A.A. ; Klyui, N.I. ; Litovchenko, V.G. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 285-290

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.285.pdf

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17

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Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing (1999)

Yli-Koski, Marko ; Mellin, J. ; Ovchinnikov, V.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 291-296

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.291.pdf

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18

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The Segregation Behaviour of Oxygen at Dislocations in Silicon (1999)

Senkader, Semih ; Wilshaw, Peter R. ; Gambaro, D. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 321-326

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.321.pdf

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19

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About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range (1999)

Yakimov, E.B. ; Feklisova, Olga V. ; Acciarri, Maurizio ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 327-332

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.327.pdf

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The Nature of Precursors for the Thermal Donor Formation in Silicon (1999)

Neimash, V.B. ; Puzenko, O.O. ; Kabaldin, O.M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 351-358

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.351.pdf

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Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam (1999)

Brusa, Roberto S. ; Karwasz, Grzegorz P. ; Zecca, Antonio ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 385-390

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.385.pdf

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In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions (1999)

Yarykin, Nikolai ; Cho, C.R. ; Zuhr, R.A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 397-402

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.397.pdf

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Infrared Vibrational Bands Related to Thermal Donors in Germanium (1999)

Litvinov, V.V. ; Klechko, A.A. ; Markevich, V.P. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 303-308

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.303.pdf

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New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon (1999)

Murin, L.I. ; Markevich, V.P. ; Hallberg, T. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 309-314

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.309.pdf

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25

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Experimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar Silicon (1999)

Möller, Hans Joachim ; Long, L.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 315-320

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.315.pdf

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Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon (1999)

Misiuk, Andrzej ; Surma, H.B. ; Antonova, I.V. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 345-350

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.345.pdf

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On the Reduction of the Critical Thickness in In〈sub〉x〈/sub〉Ga〈sub〉1-x〈/sub〉As Quantum Well Layers Grown on Vicinal GaAs Substrates (1999)

Frigeri, C. ; Brinciotti, A. ; Ritchie, D.M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 449-454

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.449.pdf

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Variations of Silicon Melt Convection in a Crucible with Boron Addition (1999)

Terashima, Koichi ; Nishimura, Seigo

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 473-478

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.473.pdf

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P-N- Junction Peripheral Current Analysis using Gated Diode Measurements (1999)

Czerwinski, A. ; Simoen, Eddy ; Poyai, A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 437-442

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.437.pdf

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Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon (1999)

Pichler, P.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 455-460

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.455.pdf

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31

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Electron Spin Resonance of the P〈sub〉b〈/sub〉 Centers Associated with Oxygen Precipitates in Silicon Crystals (1999)

Yamada-Kaneta, Hiroshi ; Koizuka, M.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 485-490

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.485.pdf

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32

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Magnetoplastic Effect in Compound Semiconductors (1999)

Darinskaya, E.V. ; Petrzhik, E.A. ; Erofeeva, S.A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 503-506

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.69-70.503.pdf

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Metastable Defects in Compound Semiconductors (1999)

Bourgoin, J.C.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 71 (Oct. 1999), p. 73-92

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

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URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.71.73.pdf

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The Effects of Implanted Arsenic on Ti-Silicide Formation (1999)

Milosavljević, M. ; Bibić, N. ; Peruško, D. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 71 (Oct. 1999), p. 147-172

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Phase Field Modeling of the Growth of mc-Silicon from the Melt (1999)

Apel, Markus ; Steinbach, Ingo

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 453-458

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Optical Characterization of Ru〈sub〉2〈/sub〉Si〈sub〉3〈/sub〉 and Ru〈sub〉2〈/sub〉Ge〈sub〉3〈/sub〉 by Various Spectroscopic Methods and by Band Structure Calculations (1999)

Henrion, W. ; Rebien, M. ; Antonov, V.N. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 471-476

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Cubic Silicon Carbide Films Grown by Reactive Magnetron Sputtering at Relatively Low Temperature (1999)

Kerdiles, S. ; Gourbilleau, F. ; Rizk, Richard ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 477-484

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Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods (1999)

Angermann, H. ; Henrion, W. ; Röseler, A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 515-520

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Relaxation of Misfit Induced Strain in Si-Based Heterostructures (1999)

Christiansen, S.H. ; Strunk, Horst P. ; Wawra, H. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 93-102

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Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors (1999)

Tala-Ighil, B. ; Rahal, A. ; Toutah, H. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 541-546

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An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors (1999)

Rau, U. ; Werner, Jens

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 553-558

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Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures (1999)

Kar, S. ; Zaumseil, P.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 167-172

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Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon (1999)

Yang, De Ren ; Zhang, Jie ; Li, L. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 197-202

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W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity (1999)

Kim, Y.O. ; Bevk, J. ; Furtsch, M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 583-0

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Iron Gettering on Cavities Produced by Helium Implantation (1999)

Roqueta, F. ; Grob, A. ; Grob, J.J. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 241-246

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Laser-Stimulated Gettering Processes in Cd〈sub〉x〈/sub〉Hg〈sub〉1-x〈/sub〉Te Solid Solutions (1999)

Gnatyuk, V.A. ; Gorodnychenko, O.S. ; Lomovtsev, A.V. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 253-258

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Defect Control in Nitrogen Doped Czochralski Silicon Crystals (1999)

Ikari, Atsushi ; Nakai, Katsuhiko ; Tachikawa, Y. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 161-166

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Interaction between Point Defects and Dislocations in SiGe (1999)

Lyutovich, Klara ; Ernst, F. ; Kasper, Erich ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 179-184

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Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon (1999)

Kögler, R. ; Peeva, A. ; Anwand, W. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 235-240

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X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices (1999)

Zaumseil, P. ; Rücker, H.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 203-208

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The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si〈sub〉1-x〈/sub〉Ge〈sub〉x〈/sub〉 Interfaces Abruptness (1999)

Orlov, L.K. ; Potapov, A.V. ; Ivin, S.V.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 221-228

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Vacancy-Gettering in Silicon: Cavities and Helium-Implantation (1999)

Corni, F. ; Tonini, R. ; Frabboni, S. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 229-234

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Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures (1999)

Litovchenko, V.G. ; Efremov, A.A. ; Claeys, C.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 273-278

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Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si〈sub〉1-x〈/sub〉Ge〈sub〉x〈/sub〉 Epitaxial Structures Obtained by MBE Method (1999)

Orlov, L.K. ; Potapov, A.V. ; Ivina, N.L. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 377-384

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Experimental and Theoretical Study on Interaction Processes for 60° Short Dislocation Segments with Precipitation Centers in Si-Crystals (1999)

Makara, V.A. ; Steblenko, L.P. ; Kolomiets, A.N.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 423-428

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Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique (1999)

Argunova, T.S. ; Gutkin, Mikhail Yu ; Kostina, L.S. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 491-496

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Correlation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS Processing (1999)

Piotrowski, T. ; Jung, W.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 519-524

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Identification of Process Induced Defects in Silicon Power Devices (1999)

Astrova, E.V. ; Kozlov, V.A. ; Lebedev, A.A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 539-544

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Oriented Silicon Films on Glass Substrates for Device Applications (1999)

Efremov, M.D. ; Volodin, V.A. ; Bolotov, V.V. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 557-562

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Substrate Material for sub-0.25µm Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion (1999)

Bostelmann, M.T. ; Leroy, B.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 577-582

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Atomic Structure of Chalcogen-Hydrogen Complexes in Silicon (1999)

Ammerlaan, C.A.J. ; Huy, P.T.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 69-70 (Aug. 1999), p. 583-588

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Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon (1999)

Kitagawa, H.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 71 (Oct. 1999), p. 51-72

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Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors (1999)

Vautier, C.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 71 (Oct. 1999), p. 249-0

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Atomic Structure and Properties of Extended Defects in Silicon (1999)

Chisholm, M.F. ; Buczko, Ryszard ; Mostoller, M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 3-14

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Electrical Activity of Tilt and Twist Grain Boundaries in Silicon (1999)

Fedotov, A.K. ; Mazanik, A.V. ; Katz, E.A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 15-20

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Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (1999)

Fedotov, A.K. ; Chuiko, M. ; Mazanik, A.V.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 21-26

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67

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Impurity Effect on the Dislocation DLTS Spectrum in Silicon (1999)

Feklisova, Olga V. ; Mariani-Regula, G. ; Pichaud, Bernard ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 27-32

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Grain Boundary Effects in Ionic and Mixed Conductors (1999)

Maier, Joachim

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 45-56

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69

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Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing (1999)

Yakimov, E.B. ; Feklisova, Olga V. ; Acciarri, Maurizio ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 39-44

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70

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Formation and Annihilation of New Donors in Ribbon Growth on Substrate Silicon (1999)

Karg, D. ; Voigt, Axel ; Krinke, J. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 33-38

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71

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Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current (1999)

Scheer, R.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 57-68

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72

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Laser Beam Induced Current Characterization of High Efficiency Chalcopyrite Solar Cells (1999)

Medvedkin, G.A. ; Wennerberg, J.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 69-74

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73

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Effective Diffusion Length of Multicrystalline Solar Cells (1999)

Donolato, C.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 75-80

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74

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Injection and Collection Diffusion Lengths of Polycrystalline Thin-Film Solar Cells (1999)

Brendel, R. ; Rau, U.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 81-88

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75

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Hydrogenated Microcrystalline Silicon for Photovoltaic Applications (1999)

Wyrsch, N. ; Torres, P.A. ; Goerlitzer, M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 89-100

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76

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Intrinsic Microcrystalline Silicon for Solar Cells (1999)

Vetterl, O. ; Hapke, P. ; Kluth, O. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 101-106

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77

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Deposition of Microcrystalline Silicon Films by Magnetron Sputtering (1999)

Tzolov, M. ; Jeliazova, Y. ; Carius, Reinhard ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 107-112

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Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate (1999)

Cherfi, R. ; Farhi, G. ; Aoucher, M.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 113-118

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79

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Low-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced Sputtering (1999)

Müller, P. ; Holber, W.M. ; Henrion, W. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 119-124

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Adaptation of Microelectronics Simulator to the Polycrystalline Silicon Technology (1999)

Gaillard, T. ; Lhermite, H. ; Bonnaud, O. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 131-136

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81

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Thickness Control of the Amorphous Buffer Layer of Hydrogenated Nanocrystalline Silicon: Effect of the Dopant Concentration (1999)

Gourbilleau, F. ; Achiq, A. ; Voivenel, P. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 137-142

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Influence of Deposit Thickness on the Microstructure and Surface Roughness of Silicon Films Deposited from Silane (1999)

Caussat, B. ; Couderc, J.P. ; Vasquez, L. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 125-130

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Structure Dependence of the Electrical Conductivity of Hydrogenated Nanocrystalline Silicon Films (1999)

Achiq, A. ; Rizk, Richard ; Gourbilleau, F. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 143-148

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84

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Highly Doped Microcrystalline SiGe Films: Structure and Transport Properties (1999)

Edelman, F. ; Raz, T. ; Komem, Y. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 149-154

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85

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Photoluminescence Measurements of Microcrystalline Silicon (1999)

Meister, M. ; Weber, Joerg ; Furtsch, M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 155-160

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86

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Silicon Produced by Thermal Chemical Vapour Deposition on Ceramic Substrates for Photovoltaic Applications (1999)

Van Zutphen, A.J.M.M. ; Von Keitz, A. ; Zeman, M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 161-168

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87

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Grain Matrix Made with Excimer-Laser Crystallization of Thin Silicon Films (1999)

Van der Wilt, P.Ch ; Ishihara, Ryoichi

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 169-174

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88

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Grain Boundary Location Control by Patterned Metal Film in Excimer Laser Crystallized Polysilicon (1999)

Mariucci, L. ; Carluccio, R. ; Pecora, A. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 175-180

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89

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Characterisation of Excimer Laser Crystallised Polysilicon by X-Ray Diffraction and by Channeling Contrast in a Scanning Electron Microscope (1999)

Loreti, S. ; Vittori, M. ; Mariucci, L. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 181-186

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90

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Multicrystalline Silicon Thin Films: Laser Crystallization Conditions and Properties (1999)

Andrä, G. ; Bergmann, J. ; Falk, Fritz ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 187-192

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91

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Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications (1999)

Dassow, R. ; Köhler, J.R. ; Grauvogl, M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 193-198

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92

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Properties of Poly-Si Obtained by Solid Phase Crystallization of Differently Produced a:Si:H Thin Films (1999)

Addonizio, M.L. ; Delli Veneri, P. ; Fameli, G. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 199-204

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Fine-Crystalline Silicon Grown at Low Temperatures: Investigations by High-Resolution Microscopy (1999)

Ross, Ch ; Herion, J. ; Houben, L. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 211-216

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Transmission Electron Microscopy and Raman Analysis of the Crystallisation Process of a-Si on Glass for Low Seed Density (1999)

Alay, J.L. ; Vilà, A. ; Morante, J.M. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 205-210

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Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate (1999)

Farhi, G. ; Aoucher, M. ; Mohammed-Brahim, T.

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 217-222

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96

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Atomic Layer Deposition of ZnO Films and Their Application to Solar Cells (1999)

Yamada, A. ; Konagai, Makoto

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 237-248

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97

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Ultrathin Quasi-Monocrystalline Silicon Films for Electronic Devices (1999)

Rinke, T.J.T.J. ; Bergmann, R.B. ; Brüggemann, R. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 229-236

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98

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Polycrystalline Silicon Films Produced by Low Pressure Chemical Vapour Deposition for Microswitch Applications: The Stress as Dependent on Deposition Conditions, Doping Type, and Thermal Treatments (1999)

Lucas, Sandrine ; Kis-Sion, K. ; Penven, J. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 223-228

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ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.223.pdf

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Properties of Transparent Conducting Indium Tin Oxide Films Deposited by Reactive e-Beam Evaporation on Heated Glass (1999)

Sinno, G. ; Minarini, C. ; Loreti, S. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 249-254

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Details

ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.249.pdf

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Structure and Properties of TiO〈sub〉2〈/sub〉 Thin Films for Gas Sensors (1999)

Edelman, F. ; Rothshild, A. ; Komem, Y. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 67-68 (Apr. 1999), p. 269-276

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Details

ISSN: 1662-9779

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Physics

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.269.pdf

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